Diodes Incorporated DMTH4014LDVWQ-13

Overview

DMTH4014LDVWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 40V V_DSS, 15 mΩ R_DS(ON) at V_GS = 10 V, and 27.5 A continuous drain current at T_C = +25°C, housed in a wettable-flank POWERDI® 3333-8 package. It is AEC-Q101 qualified, PPAP-capable, and designed for high-reliability automotive power management including wireless charging transmitters and DC-DC converter primary-side switches.

For engineers reviewing the DMTH4014LDVWQ-13 datasheet, DMTH4014LDVWQ-13 pinout, DMTH4014LDVWQ-13 application, or DMTH4014LDVWQ-13 equivalent, key selection criteria include its +175°C rated junction temperature, 100% production-tested UIS robustness, low gate charge (11.2 nC at V_GS = 10 V), and dual-die layout enabling half-bridge or synchronous rectifier configurations in space-constrained automotive modules.

Technical Context

This dual N-channel MOSFET integrates two identical silicon dies in a single POWERDI® 3333-8/SWP (Type UXD) thermally enhanced package with exposed drain pads and wettable flanks. Each channel supports independent gate control, enabling use in synchronous buck converters, H-bridge motor drivers, and bidirectional power transfer circuits where matched R_DS(ON) and dynamic parameters are critical.

Its design emphasizes thermal resilience and switching reliability: R_θJC = 7.8°C/W enables efficient heat transfer to PCB copper, while 19.6 mJ E_AS and 19.8 A I_AS ensure survivability under inductive load switching stress. The device operates across -55°C to +175°C, with gate threshold voltage tightly specified (1–3 V) and stable over temperature.

Key Specifications

Pinout & Package

Package: POWERDI® 3333-8/SWP (Type UXD), surface-mount, thermally enhanced with dual exposed drain pads and wettable flank terminals for automated optical inspection and reliable solder joint formation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with IXTQ36N25P, DMTH4014LDVWQ-13 delivers superior board-level integration, automotive compliance, and thermal performance in a smaller footprint; versus DMTH6016LSDQ-13, it offers lower on-resistance and reduced gate charge for improved efficiency in 12 V/24 V applications, albeit with less voltage margin.

Availability

DMTH4014LDVWQ-13 is available at Aetrix Electronics and suitable for automotive wireless charging, 48 V DC-DC conversion, and electric power steering systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for DMTH4014LDVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability switching in engine control, ADAS, and electrified powertrain subsystems where AEC-Q101 compliance and production-tested ruggedness are mandatory.

FAQ

What is the maximum continuous drain current per channel at T_C = +100°C?

The DMTH4014LDVWQ-13 supports 19.5 A continuous drain current per channel at case temperature +100°C when V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with 2 oz copper and thermal bias to a 1-inch square copper plate, per Note 6 in the datasheet.

Does this MOSFET require external gate resistors for automotive-grade EMI control?

Yes - although the device features low gate resistance (1.1 Ω typical), a series gate resistor (1.6 Ω recommended per datasheet switching characterization) is required to dampen ringing, limit peak gate current, and meet CISPR 25 Class 5 radiated emissions limits in automotive environments. Layout must also minimize gate loop inductance.

Can both channels be paralleled to increase current handling?

No - the two channels are electrically isolated with separate gate, source, and drain terminals; they are not internally paralleled. Paralleling would require matched external gate drive, current-sharing resistors, and careful thermal layout to avoid imbalance. The device is intended for dual-switch topologies, not current doubling.

Is the POWERDI® 3333-8/SWP package compatible with standard reflow profiles for lead-free soldering?

Yes - the package is fully RoHS 3 compliant and rated for JEDEC J-STD-020 moisture sensitivity Level 1. It supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C) with no pre-bake required, provided humidity exposure remains within MSL-1 limits prior to assembly.