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Diodes Incorporated DMTH4014LPDQ-13
- Part No.:
- DMTH4014LPDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH4014LPDQ-13.pdf
- Description:
- MOSFET 2N-CH 40V 10.6A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMTH4014LPDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 40V VDSS, 15 mΩ RDS(on) at VGS = 10 V, and 43.6 A continuous drain current at TC = +25°C. It features AEC-Q101 qualification, 175°C maximum junction temperature, and PowerDI®5060-8 (Type C) packaging - designed for high-reliability automotive power management functions including DC-DC converters and LED backlighting.
For engineers reviewing the DMTH4014LPDQ-13 datasheet, DMTH4014LPDQ-13 pinout, DMTH4014LPDQ-13 application, or DMTH4014LPDQ-13 equivalent, key selection criteria include its dual-channel layout, low RDS(on) at 4.5 V gate drive, 100% production-tested UIS robustness, and IATF 16949-certified manufacturing - critical for under-hood and infotainment power stages.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a thermally enhanced PowerDI5060-8 package with exposed drain pads for low RθJC (3.5°C/W). Its gate threshold voltage (1.0–3.0 V) supports both 3.3 V and 5 V logic-level drive, while fast switching (tR = 5.7 ns, tF = 1.8 ns) and low Qg (10.2 nC at VGS = 10 V) enable high-frequency synchronous rectification.
The device's body diode exhibits tRR = 11.9 ns and QRR = 9.28 nC at dI/dt = 400 A/μs, supporting efficient reverse recovery in buck and half-bridge topologies. Thermal design is enabled by its -55°C to +175°C operating range and normalized RDS(on) variation ≤1.4× across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V automotive bus interfaces and 36 V DC-DC input stages. |
| RDS(on) @ VGS = 10 V | 15 mΩ max - Enables <1.5 W conduction loss at 43.6 A, reducing thermal load in compact power modules. |
| RDS(on) @ VGS = 4.5 V | 25 mΩ max - Supports direct drive from 3.3 V microcontrollers without level-shifting in low-voltage control paths. |
| ID (TC = 25°C) | 43.6 A - Sustains high-current loads such as multi-string LED drivers or motor gate drivers with minimal derating. |
| EAS | 20.5 mJ - Confirmed avalanche energy rating ensures reliability during inductive turn-off transients in solenoid or relay drivers. |
| TJ max | +175°C - Allows operation in engine compartment environments without forced cooling or oversized heatsinking. |
| Ciss | 733 pF - Low input capacitance minimizes gate drive power and enables stable PWM control up to 1 MHz. |
Pinout & Package
Package: PowerDI®5060-8 (Type C), surface-mount, thermally enhanced with exposed drain pad on bottom side. Molded green compound (UL 94V-0), matte tin–annealed copper leadframe, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically tied to exposed drain pad in PCB layout for thermal conduction. |
| D1 | Drain of Channel 1 | Main current output node for Channel 1; connected to internal drain pad and external PCB copper pour for heat dissipation. |
| G1 | Gate of Channel 1 | Control input for independent switching of Channel 1; requires <10.2 nC charge for full enhancement at 10 V. |
| S2 | Source of Channel 2 | Independent source terminal for second channel; enables dual-phase or redundant power path configuration. |
| D2 | Drain of Channel 2 | Second high-current output node; isolated from D1 to support split-rail or interleaved converter designs. |
| G2 | Gate of Channel 2 | Separate gate input enabling asynchronous or synchronized control of second channel without crosstalk. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive use per stress test requirements; supported by full production part approval process documentation. |
| 100% UIS tested in production | Every unit undergoes unclamped inductive switching validation at IAS = 11.7 A and EAS = 20.5 mJ - eliminates field failures from transient overvoltage. |
| Low RDS(on) at 4.5 V | 25 mΩ max enables efficient operation with standard 3.3 V MCU GPIOs - avoids need for gate drivers in space-constrained modules. |
| Thermal resistance RθJC = 3.5°C/W | Enables >40 W power dissipation with minimal case-to-heatsink delta-T - critical for fanless automotive ECUs. |
| Halogen- and antimony-free "Green" construction | Meets RoHS 3 (2015/863/EU) with Br+Cl <1500 ppm and Sb <1000 ppm - compliant with Tier 1 automotive material declarations. |
Applications
| Automotive LED Backlighting | 12 V Automotive DC-DC Converter |
|---|---|
|
Use Scenario: Driving high-brightness LCD display backlights in instrument clusters and infotainment panels. IC Role / Device Role / Timing Role: Dual-channel high-side switch controlling parallel LED strings with independent dimming via PWM on G1/G2. Use Value: 15 mΩ RDS(on) limits conduction loss to <0.5 W per channel at 20 A, enabling compact thermal design without active cooling. |
Use Scenario: Synchronous rectification in 12 V → 3.3 V/5 V buck converters powering ADAS sensors and telematics modules. IC Role / Device Role / Timing Role: Low-side switch in dual-phase topology, leveraging matched RDS(on) and fast tF = 1.8 ns for <100 ns dead-time control. Use Value: 25 mΩ RDS(on) at 4.5 V allows direct MCU control, eliminating gate driver ICs and reducing BOM count by one component per phase. |
| Engine Control Unit (ECU) Power Distribution | Automotive HVAC Blower Motor Driver |
|
Use Scenario: Solid-state replacement for electromechanical relays in 12 V power distribution units within engine bays. IC Role / Device Role / Timing Role: Dual N-channel switch managing redundant power feeds to critical subsystems (e.g., fuel pump, ignition coil). Use Value: 175°C TJ rating and 100% UIS testing ensure reliable operation at ambient temperatures up to 125°C without derating. |
Use Scenario: Half-bridge driver for variable-speed blower motors in climate control systems. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch handling peak currents >30 A during startup surges. Use Value: 43.6 A ID rating and 20.5 mJ EAS withstand motor inductive kickback without snubbers or clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4014LPSQ-13 | Same silicon die, PowerDI5060-8/SWP (Type UXD) package with different leadform geometry and 0.735 mm L dimension. | Requires revised PCB footprint and stencil design; identical thermal and electrical specs. | Select when board layout constraints favor the SWP variant's shorter lead length and tighter pitch tolerance. |
| IPB80N04S4-02 | Single-channel 40 V MOSFET (80 A, 2.0 mΩ), TO-263 package; no dual-channel integration. | Needs two devices and extra routing for dual-path functionality; higher RθJA (40°C/W vs. 62.6°C/W). | Choose only if discrete channel isolation is required or existing TO-263 thermal infrastructure exists. |
Compared with DMTH4014LPDQ-13, the LPSQ-13 offers identical performance in a mechanically distinct variant ideal for layout optimization, while the IPB80N04S4-02 sacrifices integration and thermal efficiency for higher single-channel current capability - making it unsuitable for space- or thermal-constrained dual-switch applications.
Availability
DMTH4014LPDQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, and ECU power distribution requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle continuity.
Supply support for DMTH4014LPDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This device belongs to Diodes' PowerMOS™ automotive-qualified portfolio, engineered specifically for under-hood power switching where high temperature resilience, avalanche robustness, and PPAP readiness are mandatory.
FAQ
What is the maximum allowable gate-source voltage for DMTH4014LPDQ-13?
The absolute maximum VGS is ±20 V, as specified in the Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable 100% lifetime operation, gate drive should be limited to ≤15 V with appropriate series resistance to suppress ringing during fast transitions.
Does DMTH4014LPDQ-13 support logic-level gate drive from a 3.3 V microcontroller?
Yes - its gate threshold voltage ranges from 1.0 V to 3.0 V, and RDS(on) is guaranteed at 25 mΩ max with VGS = 4.5 V. At 3.3 V, typical RDS(on) is ~38 mΩ (per Figure 3), enabling functional switching at reduced current levels (≤15 A) without external level shifting.
How is thermal performance affected when using the PowerDI5060-8 package without an exposed copper pour?
Without connection of the exposed drain pad to a ≥1 in² copper area, RθJA degrades from 62.6°C/W to >120°C/W. This reduces safe operating current by >50% at ambient 85°C. The datasheet specifies all thermal ratings assume proper PCB thermal land design per the recommended pad layout on page 9.
Is DMTH4014LPDQ-13 suitable for reverse polarity protection circuits?
No - as a standard enhancement-mode N-channel MOSFET, it lacks integrated body diode orientation for inline reverse-blocking. For reverse polarity protection, a P-channel device (e.g., DMTH10H023LPSQ) or back-to-back N-channel configuration is required; this part is optimized for forward-switching topologies only.
DMTH4014LPDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 10.6A (Ta), 43.6A (Tc)
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 733pF @ 20V
- Power - Max:
- 2.41W (Ta), 42.8W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH4014LPDQ-13 FAQ
1.How can I place an order for DMTH4014LPDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH4014LPDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH4014LPDQ-13 reliable?
The price and inventory of DMTH4014LPDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4014LPDQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH4014LPDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4014LPDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH4014LPDQ-13?
DMTH4014LPDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH4014LPDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH4014LPDQ-13?
For technical support, including DMTH4014LPDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4014LPDQ-13 requirements.
6.How does Aetrix verify that DMTH4014LPDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH4014LPDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4014LPDQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH4014LPDQ-13?
All DMTH4014LPDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4014LPDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH4014LPDQ-13 part is unused and in its original packaging.
Return procedure for DMTH4014LPDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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