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Diodes Incorporated DMTH4014LPSW-13
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- Part No.:
- DMTH4014LPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH4014LPSW-13.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:9,626
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Product details
Overview
DMTH4014LPSW from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, rated for continuous drain current of 43.5A at TC = +25°C, RDS(ON) = 14.5mΩ @ VGS = 10V, and operation up to +175°C junction temperature. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters.
For engineers reviewing the DMTH4014LPSW datasheet, DMTH4014LPSW pinout, DMTH4014LPSW application, or DMTH4014LPSW equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Qg (11.2nC @ VGS = 10V), and thermal resistance RθJC = 3.2°C/W enabling high-power-density designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining fast switching speed (tD(ON) = 3.5ns, tF = 4.9ns) and low gate charge (Qgd = 2.2nC). Its body diode exhibits tRR = 11.3ns and QRR = 9.5nC under IF = 15A, di/dt = 400A/μs - critical for synchronous rectification efficiency.
The device is characterized across -55°C to +175°C, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 10V. Its Safe Operating Area (SOA) is defined up to 175°C with pulse widths from 10μs to 1s, supporting high-reliability automotive and industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche; sets upper limit for input/output rail compatibility in 12V–36V systems. |
| RDS(ON) | 14.5mΩ @ VGS = 10V - Enables <1.8W conduction loss at 43.5A, reducing heatsink requirements in high-current DC-DC stages. |
| ID (TC = +25°C) | 43.5A - Continuous drain current rating at case temperature; defines maximum steady-state power delivery capability. |
| Qg | 11.2nC @ VGS = 10V - Low total gate charge reduces driver power and enables >1MHz switching without excessive gate drive loss. |
| RθJC | 3.2°C/W - Thermal resistance from junction to exposed drain pad; allows direct thermal coupling to PCB copper or heatsink for high-power dissipation. |
| TJ max | +175°C - Extended junction temperature rating supports operation in engine bay, industrial motor drives, and sealed enclosures without derating. |
| Ciss | 750pF @ VDS = 20V - Input capacitance determines gate drive energy and influences EMI behavior in hard-switched topologies. |
Pinout & Package
Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain (common source connection) | All eight pins are internally connected to the drain terminal and exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Source (S) | Source terminal (pins 1–8 share drain; source is separate) | Source is electrically isolated from drain and routed to dedicated S pads - enables accurate current sensing and gate drive referencing in half-bridge configurations. |
| Gate (G) | Control input | Single gate terminal (pin 1 labeled "G" per marking diagram) - requires <11.2nC charge to fully enhance; low Rg = 1.1Ω minimizes ringing risk. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Validated continuous operation up to 175°C junction temperature - eliminates thermal derating in high-ambient environments like automotive under-hood or industrial motor control. |
| 100% UIS tested | Every unit undergoes unclamped inductive switching test (IAS = 19.8A, EAS = 19.6mJ) - ensures robustness against inductive load transients without external snubbers. |
| Wettable flank terminals | Side-wettable leads enable AOI (automated optical inspection) of solder fillets - improves manufacturing yield and field reliability in high-volume SMT assembly. |
| Low Qgd/Qg ratio | Qgd = 2.2nC / Qg = 11.2nC = 0.20 - low Miller charge ratio suppresses shoot-through risk and improves hard-switching stability in synchronous buck converters. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb); matte tin annealed finish - meets automotive and industrial environmental compliance mandates. |
Applications
| Automotive DC-DC Converters | Industrial Motor Drive Gate Drivers |
|---|---|
|
Use Scenario: 12V-to-48V bidirectional DC-DC converter in 48V mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck-boost stage operating at 300kHz. Use Value: 14.5mΩ RDS(ON) and 11.3ns body diode tRR reduce conduction and reverse recovery losses by >18% vs. legacy 20mΩ MOSFETs, improving system efficiency from 92% to 94.3%. |
Use Scenario: Half-bridge output stage in servo amplifier driving 3-phase BLDC motors. IC Role / Device Role / Timing Role: Low-side switch handling peak currents up to 40A with 100ns dead-time constraints. Use Value: 3.2°C/W RθJC and +175°C rating allow direct mounting to aluminum heatsink without thermal interface material, simplifying mechanical design and reducing thermal stack-up by 0.5mm. |
| Server VRM Power Stages | Telecom PoE++ Switches |
|
Use Scenario: Multiphase CPU voltage regulator module (VRM) delivering up to 300A at 0.8V. IC Role / Device Role / Timing Role: Phase-leg high-side FET switching at 1MHz with adaptive gate drive. Use Value: 750pF Ciss and 21pF Crss minimize capacitive coupling during dV/dt transitions, reducing false triggering and enabling stable operation with 1.2V gate drive. |
Use Scenario: 90W PoE++ (IEEE 802.3bt Type 4) PSE controller output stage. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology with 200kHz switching frequency. Use Value: 100% UIS qualification ensures survival during cable fault events (e.g., short-circuit hot-plug), eliminating need for external TVS clamping on 57V supply rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N04S4-02 | RDS(ON) = 1.8mΩ @ VGS = 10V (lower), but TO-263-7 package (larger footprint, higher RθJA = 40°C/W). | Better conduction loss at <20A; unsuitable for space-constrained layouts requiring PowerDI5060-8 footprint. | Select when board area permits larger package and ultra-low RDS(ON) dominates thermal design. |
| SIS116DN-T1-GE3 | RDS(ON) = 15.5mΩ @ VGS = 10V (slightly higher), same PowerDI5060-8 package, but only rated to +150°C TJ. | Lacks +175°C rating and UIS testing - not qualified for automotive under-hood or high-reliability industrial use. | Select only for cost-sensitive commercial applications where ambient temperature remains <125°C and transient stress is minimal. |
Compared with IPB180N04S4-02 and SIS116DN-T1-GE3, DMTH4014LPSW uniquely balances ultra-low RDS(ON), industry-leading +175°C rating, and production-tested UIS robustness within the compact PowerDI5060-8 footprint - making it optimal for high-power-density, high-reliability applications where thermal margin and transient immunity are non-negotiable.
Availability
DMTH4014LPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom PoE++ switches requiring stable component supply and long-term lifecycle support.
Supply support for DMTH4014LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and product qualification aligned to AEC-Q101 standards.
This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and computing applications where thermal resilience and switching fidelity are critical.
FAQ
What is the maximum allowable gate-source voltage for DMTH4014LPSW?
The absolute maximum gate-source voltage is ±20V, as specified in the Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable enhancement, VGS should be maintained between 4.5V (for 34.5A ID) and 10V (for full 43.5A rating), with typical gate drive circuits using 12V logic-level drivers with series gate resistors to control dv/dt.
Does DMTH4014LPSW require a gate resistor, and if so, what value is recommended?
Yes - a gate resistor is required to dampen ringing and control switching speed. Based on measured Rg = 1.1Ω and Qg = 11.2nC, a 5Ω to 10Ω series resistor is recommended for 300–500kHz operation. Lower values (≤3Ω) increase EMI risk; higher values (>15Ω) degrade tR/tF and raise switching losses disproportionately.
Can DMTH4014LPSW be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(ON) (normalized RDS(ON) increases with TJ, per Figure 6) enables inherent current sharing. Parallel operation requires matched layout (identical trace lengths, symmetric thermal paths), individual gate resistors, and current-sharing verification at full load and elevated temperature (≥125°C) to ensure <10% current imbalance.
Is DMTH4014LPSW qualified for automotive applications per AEC-Q101?
No - while the device is rated to +175°C and manufactured in IATF 16949 facilities, Diodes' documentation states that automotive-qualified versions require explicit AEC-Q101 certification and PPAP submission. DMTH4014LPSW is intended for industrial and commercial use; for automotive, contact Diodes for the AEC-Q101-qualified variant (e.g., DMTH4014LPSWQ-13).
DMTH4014LPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 43.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4W (Ta), 46.9W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH4014LPSW-13 FAQ
1.How can I place an order for DMTH4014LPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH4014LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH4014LPSW-13 reliable?
The price and inventory of DMTH4014LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4014LPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH4014LPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4014LPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH4014LPSW-13?
DMTH4014LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH4014LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH4014LPSW-13?
For technical support, including DMTH4014LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4014LPSW-13 requirements.
6.How does Aetrix verify that DMTH4014LPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH4014LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4014LPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH4014LPSW-13?
All DMTH4014LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4014LPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH4014LPSW-13 part is unused and in its original packaging.
Return procedure for DMTH4014LPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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