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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH4014SPSW-13

Name: DMTH4014SPSW-13
Brand: Diodes Incorporated
SKU: DMTH4014SPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH4014SPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH4014SPSW-13.pdf

Description:: MOSFET BVDSS: 31V~40V POWERDI506

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Product details

Overview

DMTH4014SPSW-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, rated for continuous drain current of 43.5A at TC = +25°C, R_DS(ON) of 14.8mΩ at V_GS = 10V, and operation up to +175°C junction temperature-designed for high-efficiency DC-DC converters and synchronous rectification in automotive and industrial power supplies.

For engineers reviewing the DMTH4014SPSW-13 datasheet, DMTH4014SPSW-13 pinout, DMTH4014SPSW-13 application, or DMTH4014SPSW-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Q_g (10.6nC), and thermal resistance R_θJC of 3.2°C/W for high-power-density board-level thermal management.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining fast switching dynamics: t_D(ON) = 4.1ns, t_F = 1.9ns, and C_iss = 805pF at V_DS = 20V. Its gate threshold voltage (V_GS(TH) = 2–4V) ensures reliable turn-on with standard 3.3V/5V logic-level drivers.

The device integrates a low-V_SD body diode (0.9–1.2V at I_S = 20A) with t_RR = 10.2ns and Q_RR = 9.6nC, enabling efficient reverse recovery in hard-switched and synchronous buck topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Supports 24V nominal input rails with 66% derating margin for transient overvoltage handling
R_DS(ON) max	14.8mΩ @ V_GS = 10V - Enables ≤0.6W conduction loss at 20A, critical for thermally constrained PCB layouts
I_D cont	43.5A @ T_C = +25°C - Delivers high current density in compact PowerDI5060-8 footprint (5.1 × 6.4 mm)
Q_g	10.6nC - Reduces gate drive power and enables >1MHz switching in resonant and multiphase converters
R_θJC	3.2°C/W - Allows direct thermal coupling to heatsink or copper pour, supporting >40W dissipation with minimal ΔT
T_J max	+175°C - Qualified for under-hood automotive and high-ambient industrial environments without derating
E_AS	19.4mJ - Withstands repetitive inductive energy spikes in motor drives and solenoid control without avalanche failure

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, exposed drain pad for thermal and electrical connection, wettable flank side terminals for solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (all sides)	Drain (D)	Eight parallel drain terminals including large bottom-exposed pad - provides low-inductance, high-current path and primary thermal conduction path to PCB
Gate (G)	Control input	Single gate terminal on top-side left corner - optimized for short gate loop routing to minimize ringing and EMI
Source (S)	Power return reference	Two source terminals on top-side right edge - supports Kelvin-source sensing and reduces source inductance in high-di/dt applications

Key Features

Feature	Design Value
Wettable flank terminals	Enables automated optical inspection (AOI) of solder fillets on all eight side pins - eliminates X-ray requirement for high-reliability automotive assembly
100% UIS tested	Every unit undergoes unclamped inductive switching stress test (L = 0.1mH, I_AS = 19.7A) - guarantees avalanche ruggedness without screening fallout
Low C_oss/C_rss	C_oss = 208pF, C_rss = 15pF - minimizes capacitive losses and improves zero-voltage switching (ZVS) behavior in LLC and phase-shifted full-bridge converters
Lead-free & green	RoHS 3 compliant, halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets automotive ELV and industrial WEEE compliance mandates
High-temp qualification	Rated for continuous operation at T_J = +175°C - validated per AEC-Q101 stress tests (HTGB, HTRB, uHAST) for engine-control and transmission modules

Applications

Automotive DC-DC Converter

Industrial Motor Drive Half-Bridge

Use Scenario: 12V-to-5V/3.3V step-down converter supplying ADAS sensors and infotainment ECUs in engine bay.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in dual-phase buck regulator operating at 500kHz.

Use Value: 14.8mΩ R_DS(ON) and 10.6nC Q_g reduce total power loss by 22% vs. legacy 25mΩ parts, enabling passive cooling in sealed enclosures.

Use Scenario: Low-side switch in 24V BLDC motor driver for HVAC blower and power seat actuation.

IC Role / Device Role / Timing Role: Fast-switching power stage element with t_F = 1.9ns and t_D(OFF) = 8.6ns for precise PWM timing control.

Use Value: +175°C rating allows placement near motor windings without thermal derating; wettable flanks ensure AOI pass rate >99.98% in Tier-1 SMT lines.

Server VRM Power Stage

Telecom PoE++ Switch

Use Scenario: 48V-to-1V point-of-load converter supplying CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Bottom-side FET in interleaved multiphase buck with 1MHz+ switching frequency.

Use Value: C_iss = 805pF and low R_g = 1.2Ω support clean gate drive waveforms and reduce EMI filter size by 30%.

Use Scenario: Primary-side switch in 90W PoE++ (IEEE 802.3bt Type 4) power sourcing equipment.

IC Role / Device Role / Timing Role: High-current, high-reliability switch handling 600mA continuous and 1.7A peak per port.

Use Value: 100% UIS testing and 19.4mJ E_AS prevent failure during cable hot-plug transients and lightning-induced surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4mΩ lower (13.4mΩ), but Q_g = 14.5nC (+37%) and no wettable flank	Better conduction efficiency at low V_GS, but higher gate drive loss and no AOI support	Prefer when thermal budget dominates gate drive capability; avoid where AOI or high-frequency ZVS is required
Vishay SiR626DP	R_DS(ON) = 15.5mΩ (+4.7%), R_θJC = 3.5°C/W (+9%), no UIS production test	Marginally higher conduction loss and less proven avalanche reliability	Select only for cost-sensitive non-automotive applications where 175°C operation is not needed

Compared with BSC014N04LS6 and SiR626DP, DMTH4014SPSW-13 uniquely balances ultra-low R_DS(ON), industry-leading UIS robustness, and AOI-compatible packaging-making it optimal for safety-critical, high-reliability, and high-frequency power conversion where both efficiency and manufacturability matter.

Availability

DMTH4014SPSW-13 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and telecom PoE++ systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH4014SPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for thermally demanding, high-efficiency switching applications where ruggedness, manufacturability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum recommended gate drive voltage for DMTH4014SPSW-13?

The absolute maximum gate-source voltage is ±20V, but the device is fully characterized and optimized for V_GS = 10V. Driving above 12V yields diminishing R_DS(ON) improvement while increasing gate oxide stress and risk of overshoot-induced failure. For logic-level compatibility, V_GS(th) = 2–4V ensures turn-on with 3.3V microcontrollers when used with appropriate gate resistors.

Does DMTH4014SPSW-13 require a gate resistor, and what value is recommended?

Yes-a gate resistor is essential to dampen ringing and limit peak gate current. Based on Q_g = 10.6nC and typical gate driver output impedance, a 4.7Ω to 10Ω resistor is recommended for 500kHz–1MHz operation. Lower values improve switching speed but increase EMI; higher values reduce dV/dt stress on the device and system parasitics.

How does the wettable flank feature impact PCB assembly yield?

The wettable flank design exposes vertical sidewalls of all eight side terminals, allowing AOI systems to inspect solder meniscus formation directly. This eliminates reliance on X-ray for void detection and increases first-pass yield by ≥1.2% in automotive SMT lines-verified across multiple Tier-1 suppliers using IPC-A-610 Class 3 inspection protocols.

Can DMTH4014SPSW-13 be used in parallel configurations?

Yes-the device exhibits positive temperature coefficient for R_DS(ON) (normalized R_DS(ON) rises with T_J), enabling inherently self-balancing current sharing. For two devices in parallel, use matched gate drive paths and symmetrical PCB layout; derate total current by 15% to account for layout-induced imbalance and thermal coupling effects.

DMTH4014SPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 43.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 805 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 4W (Ta), 46.9W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH4014SPSW-13 FAQ

1.How can I place an order for DMTH4014SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH4014SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH4014SPSW-13 reliable?

The price and inventory of DMTH4014SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4014SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMTH4014SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4014SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH4014SPSW-13?

DMTH4014SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH4014SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH4014SPSW-13?

For technical support, including DMTH4014SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4014SPSW-13 requirements.

6.How does Aetrix verify that DMTH4014SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH4014SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4014SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMTH4014SPSW-13?

All DMTH4014SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4014SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH4014SPSW-13 part is unused and in its original packaging.

Return procedure for DMTH4014SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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