Diodes Incorporated DMTH41M2SPSQ-13

Overview

DMTH41M2SPSQ-13 from Diodes Incorporated is a 40V, 225A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 1.2mΩ R_DS(ON) at V_GS = 10V and supports 900A pulsed drain current, targeting high-current automotive power switching in engine management and DC-DC converters.

For engineers reviewing the DMTH41M2SPSQ-13 datasheet, DMTH41M2SPSQ-13 pinout, DMTH41M2SPSQ-13 application, or DMTH41M2SPSQ-13 equivalent, key selection criteria include its 0.9°C/W R_θJC, 100% production-tested UIS robustness, thermally efficient exposed-drain package, and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (2–4V) enables reliable turn-on with standard 3.3V/5V logic-level drivers, while its 138nC total gate charge and 10nC Q_gd support controlled dV/dt in hard-switched topologies.

The device integrates a co-packaged body diode with 0.76–1.3V forward voltage at 20A and 60ns reverse recovery time, enabling synchronous rectification and freewheeling in bidirectional power stages. Its SOA is defined up to 10ms pulses at 225A with V_DS ≤ 5V under TC = +25°C conditions.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration). Dimensions: 5.15 × 6.15 × 1.00 mm, 0.097g mass, 1.1mm max profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IXTQ400N04S2 and STL225N4LF8AG, DMTH41M2SPSQ-13 uniquely combines AEC-Q101 qualification, PPAP readiness, 0.9°C/W R_θJC, and 1.2mΩ R_DS(ON) in a 1.1mm-profile surface-mount package-making it optimal for space-constrained, thermally demanding automotive power modules requiring production-grade assurance.

Availability

DMTH41M2SPSQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and automotive DC-DC converters requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH41M2SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

This MOSFET belongs to Diodes' Automotive Power portfolio, engineered specifically for AEC-Q101-compliant, high-current switching in harsh-temperature automotive subsystems including powertrain, chassis, and electrification systems.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

The DMTH41M2SPSQ-13 supports 160A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 0.9°C/W R_θJC and ambient cooling capability, and must be validated against actual PCB layout and heatsink performance.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. With 3.64Ω intrinsic gate resistance and 138nC total gate charge, a 2.5Ω external resistor is used in the datasheet's switching timing test circuit to achieve stable 14ns turn-on delay and 19ns rise time under 50A load conditions.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has 0.76–1.3V forward voltage at 20A and 60ns reverse recovery time, making it viable for low-frequency (<100kHz) synchronous rectification. However, for high-frequency DC-DC converters, an external Schottky diode may be preferred to minimize recovery losses.

How is the PowerDI5060-8 (Type K) package mounted for optimal thermal performance?

Optimal thermal performance requires soldering the exposed drain pad directly to a large copper area (≥1 inch², 2oz) on the PCB bottom layer, with ≥4 thermal vias (0.3mm diameter) connecting to internal ground or power planes. The datasheet specifies this configuration achieves 0.9°C/W R_θJC and 44°C/W R_θJA.