Diodes Incorporated DMTH41M8SPS-13

Overview

DMTH41M8SPS from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, rated for continuous operation up to +175°C. It delivers 1.4–1.8 mΩ R_DS(ON) at V_GS = 10 V, supports 400 A pulsed drain current, and is qualified to AEC-Q101 for automotive engine management and DC-DC converter applications.

For engineers reviewing the DMTH41M8SPS datasheet, DMTH41M8SPS pinout, DMTH41M8SPS application, or DMTH41M8SPS equivalent, this page provides verified thermal, switching, and conduction parameters - including R_θJC = 1.0 °C/W, Q_g = 79.5 nC, t_R = 41.3 ns, E_AS = 265 mJ, and 100% production-tested UIS - critical for high-reliability power stage design.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(ON) while maintaining fast switching and robust avalanche capability. Its 0.9–1.1 mm profile and exposed drain pad enable direct thermal coupling to PCB copper, supporting high-current, high-temperature operation without external heatsinks in constrained layouts.

The device integrates a body diode with 100 A continuous forward rating and 62 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck, half-bridge, and motor drive topologies. Gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 5.15 × 6.15 × 1.0 mm (L × W × H), 0.097 g mass, RoHS-compliant matte tin finish on copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP110N04T4 and STL220N4LF8AG, DMTH41M8SPS uniquely combines AEC-Q101 qualification, 1.0 °C/W thermal resistance, and 100 A continuous rating in a 1.0 mm profile - making it the only option for space-constrained, high-current automotive power stages requiring full temperature-range reliability.

Availability

DMTH41M8SPS is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for DMTH41M8SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power portfolio, engineered specifically for high-temperature, high-current switching in engine control units, battery management, and chassis electronics - emphasizing ruggedness, thermal performance, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current for DMTH41M8SPS at +100°C case temperature?

The datasheet specifies 100 A continuous drain current at both T_C = +25°C and T_C = +100°C (Note 9). This reflects the device's thermal design: its 1.0 °C/W R_θJC and low R_DS(ON) allow full-rated current even at elevated case temperatures without derating, provided the PCB copper area meets the 2 oz FR-4 thermal bias requirement.

Is DMTH41M8SPS pin-compatible with the automotive-grade DMTH41M8SPSQ variant?

Yes - DMTH41M8SPSQ shares identical PowerDI5060-8 (Type K) packaging, pin configuration, and electrical specifications. The only difference is that DMTH41M8SPSQ is explicitly certified to AEC-Q101 Rev G with additional automotive-specific test reports; both parts use the same die and assembly process.

How does the 100% UIS testing impact real-world reliability in motor drive applications?

Each DMTH41M8SPS undergoes production-level unclamped inductive switching at I_AS = 72.8 A and E_AS = 265 mJ. In motor drives, this ensures immunity to voltage spikes caused by sudden current interruption - eliminating field failures from inductive kickback during emergency stops or PWM dead-time transitions.

Can DMTH41M8SPS be used with 3.3 V gate drive without compromising R_DS(ON) performance?

No - at V_GS = 3.3 V, R_DS(ON) rises significantly (typical ~4.5 mΩ per Figure 4), increasing conduction loss by >2× versus 10 V drive. For 3.3 V logic, a gate driver with bootstrap or charge-pump boost is required to achieve V_GS ≥ 8 V and maintain sub-2 mΩ performance.