Diodes Incorporated DMTH41M8SPSQ-13

Overview

DMTH41M8SPSQ-13 from Diodes Incorporated is a 40V, 210A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 1.8mΩ R_DS(ON) at V_GS = 10V, supports 840A pulsed drain current, and is designed for high-reliability automotive power switching in engine management and DC-DC converters.

For engineers reviewing the DMTH41M8SPSQ-13 datasheet, DMTH41M8SPSQ-13 pinout, DMTH41M8SPSQ-13 application, or DMTH41M8SPSQ-13 equivalent, key selection criteria include its 1.0°C/W R_θJC, 100% production-tested UIS robustness, thermally efficient exposed-drain package, and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its 1.8mΩ R_DS(ON) at 10V gate drive enables high-efficiency synchronous rectification and motor control, while the 72.8A avalanche current rating ensures ruggedness under inductive load transients.

The PowerDI5060-8 (Type K) package integrates an exposed drain pad for direct thermal coupling to PCB copper, delivering 1.0°C/W junction-to-case resistance. Its 1.1mm profile and 0.097g mass support space-constrained, high-temperature automotive modules requiring stable performance from −55°C to +175°C.

Key Specifications

Pinout & Package

PowerDI5060-8 (Type K) is a surface-mount, thermally enhanced 8-terminal package with an exposed drain pad occupying >70% of the bottom surface area. The package features matte tin–annealed copper leadframe, UL 94V-0 molding compound, and 0.097g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N4F7AG and IPB180N04S4-02, DMTH41M8SPSQ-13 uniquely balances 210A current capacity, 1.0°C/W thermal resistance, and production-validated UIS robustness in a 1.1mm-profile package-making it optimal for space-constrained, high-reliability automotive power stages where both efficiency and ruggedness are non-negotiable.

Availability

DMTH41M8SPSQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for DMTH41M8SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and ISO 14001 certification.

The DMTH41M8SPSQ-13 belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for high-temperature, high-current automotive power switching applications including engine control, ADAS power supplies, and electric vehicle subsystems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH41M8SPSQ-13 supports 150A continuous drain current at T_C = +100°C, as specified in its Absolute Maximum Ratings table. This de-rating reflects thermal limitations of the PowerDI5060-8 package and must be applied when ambient conditions exceed 75°C or PCB copper area is restricted.

Is the device suitable for high-side switching configurations?

Yes-the DMTH41M8SPSQ-13 supports high-side switching when paired with a gate driver capable of providing ≥10V above the source potential. Its ±20V V_GSS rating and 4V V_GS(TH) max ensure reliable turn-on even with elevated source voltages in boost or half-bridge topologies.

Does the part include integrated ESD protection on the gate?

No-this MOSFET does not integrate gate ESD protection diodes. External gate protection (e.g., 10Ω series resistor + 12V TVS) is recommended in automotive harness environments where >8kV HBM transients may occur, especially during connector mating/unmating.

What is the typical reverse recovery charge (Q_RR) of the body diode?

The body diode exhibits 103nC typical reverse recovery charge at I_F = 50A and di/dt = 100A/μs, as measured per JEDEC JESD24-11. This value directly impacts switching losses in synchronous rectification and must be accounted for in gate driver sizing and dead-time optimization.