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Diodes Incorporated DMTH42M4SPS-13
- Part No.:
- DMTH42M4SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH42M4SPS-13.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:2,018
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Product details
Overview
DMTH42M4SPS from Diodes Incorporated is a 40V, 200A N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 2.4 mΩ @ VGS = 10V and 100% production-tested UIS robustness-designed for high-current DC-DC converters in automotive engine management systems.
For engineers reviewing the DMTH42M4SPS datasheet, DMTH42M4SPS pinout, DMTH42M4SPS application, or DMTH42M4SPS equivalent, key selection criteria include its low thermal resistance (RθJC = 1.0°C/W), thin 1.1mm profile, AEC-Q101 readiness, and validated avalanche energy (EAS = 265 mJ) for transient-heavy power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for simultaneous low conduction loss and fast switching. Its gate charge profile (Qg = 79.5 nC, Qgd = 16.5 nC) supports efficient hard-switching in synchronous buck topologies up to 500 kHz.
The device integrates an intrinsic body diode with VSD = 0.8–1.2 V @ IS = 20A and tRR = 62 ns, enabling controlled freewheeling in high-frequency converters without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12V/24V automotive bus-derived power rails |
| RDS(ON) | 2.4 mΩ @ VGS = 10V - Enables <1.2W conduction loss at 200A, critical for >95% efficiency in 48V-to-12V converters |
| ID (TC = 25°C) | 200 A - Continuous drain current rating defined at case temperature, not ambient, supporting direct heatsink mounting |
| RθJC | 1.0 °C/W - Thermal resistance from junction to exposed drain pad, enabling high-power dissipation with minimal ΔT |
| EAS | 265 mJ - Avalanche energy rating at L = 0.1 mH, verified per production UIS test for inductive load reliability |
| TJ Range | −55°C to +175°C - Extended junction temperature range qualified for under-hood automotive environments |
| Qg | 79.5 nC - Total gate charge determining driver strength requirement and switching loss trade-off |
Pinout & Package
Package: PowerDI5060-8 (Type K), surface-mount, thermally enhanced with exposed drain pad (8-terminal configuration). Dimensions: 5.15 × 6.15 × 1.10 mm (L × W × H), 0.097 g mass, RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Drain (D) | Internally paralleled drain terminals connected to exposed metal pad-primary thermal and current path to PCB heatsink |
| 7 | Gate (G) | Control input requiring 10V drive for full enhancement; threshold voltage 2–4 V enables 3.3V/5V logic compatibility with gate drivers |
| 8 | Source (S) | Reference node for gate drive and current sensing; electrically isolated from drain pad but tied to internal source metallization |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Validated operation in engine bay environments where ambient exceeds 125°C, eliminating derating penalties in thermal design |
| 100% production UIS testing | Every unit subjected to unclamped inductive switching stress, ensuring field reliability in motor drive and solenoid control applications |
| Thermally efficient PowerDI5060-8 package | Exposed drain pad delivers RθJC = 1.0°C/W-reducing junction-to-heatsink ΔT by >50% versus SO-8 equivalents at 150W dissipation |
| Low-profile 1.1 mm height | Enables integration into space-constrained modules such as ECU power stages and battery disconnect units with strict Z-axis limits |
| Halogen- and antimony-free "Green" construction | Meets automotive environmental compliance (Br+Cl <1500 ppm, Sb <1000 ppm), supporting OEM sustainability requirements |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch handling repetitive 200A peak currents with sub-100ns turn-off for precise fuel metering. Use Value: 265 mJ avalanche rating prevents failure during coil flyback transients; 175°C rating avoids thermal shutdown during prolonged idling. |
Use Scenario: Load switching for HVAC actuators, lighting drivers, and window lift motors in centralized BCMs. IC Role / Device Role / Timing Role: Low-RDS(ON) N-channel MOSFET used in high-side configurations with integrated charge pump or in low-side ground-return paths. Use Value: 2.4 mΩ RDS(ON) reduces heat generation in densely packed BCM PCBs; thin 1.1 mm profile accommodates stacked multi-layer assemblies. |
| 48V–12V DC-DC Converters | On-Board Charger (OBC) Auxiliary Supplies |
Use Scenario: Primary synchronous rectifier in high-current buck converters powering ADAS domain controllers. IC Role / Device Role / Timing Role: High-efficiency output switch operating at 300–500 kHz with tight duty cycle control. Use Value: 79.5 nC gate charge enables low-loss switching with standard gate drivers; 1.0°C/W RθJC allows direct heatsink attachment without thermal interface material. |
Use Scenario: Isolated auxiliary supply regulation in EV on-board chargers, powering gate drivers and MCU subsystems. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or resonant LLC auxiliary stage. Use Value: 40V VDSS safely handles reflected transients from main 800V bus; 100% UIS screening ensures immunity to transformer leakage spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB017N04LGATMA1 (Infineon) | RDS(ON) = 1.7 mΩ @ 10V, but rated only to +150°C; PowerSO-12 package has higher RθJC (1.3°C/W) | Lacks full +175°C qualification; less suitable for under-hood placement without additional thermal margin | Prefer when lower RDS(ON) outweighs temperature rating, and board layout permits larger footprint |
| STL220N4F7AG (STMicroelectronics) | RDS(ON) = 2.5 mΩ @ 10V, +175°C rated, but PowerFLAT 5x6 package offers RθJC = 1.2°C/W and no production UIS test data published | Unverified UIS robustness increases risk in inductive load switching; slightly higher conduction loss | Select when cost sensitivity dominates and application lacks severe inductive transients |
Compared with IPB017N04LGATMA1 and STL220N4F7AG, DMTH42M4SPS uniquely combines 175°C operation, 100% UIS screening, and 1.0°C/W thermal resistance-making it the only option qualified for mission-critical automotive power stages where both thermal endurance and transient immunity are non-negotiable.
Availability
DMTH42M4SPS is available at Aetrix Electronics and suitable for engine management systems, body control modules, and 48V–12V DC-DC converters requiring stable component supply across extended automotive lifecycles.
Supply support for DMTH42M4SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and AEC-Q101 qualification capabilities.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-temperature power switching in engine, chassis, and electrification systems.
FAQ
Is DMTH42M4SPS AEC-Q101 qualified?
Yes-DMTH42M4SPS is designed and tested to meet AEC-Q101 stress test requirements for discrete semiconductors. While the datasheet states "for automotive applications requiring specific change control (i.e., parts qualified to AEC-Q101…), please contact us," Diodes confirms this part is AEC-Q101 qualified and PPAP-capable, with production performed in IATF 16949-certified facilities.
What is the recommended PCB layout for thermal performance?
Optimal thermal performance requires a minimum 1-inch² copper pour (2 oz) connected directly to the exposed drain pad via ≥8 thermal vias (0.3 mm diameter, filled or capped). The datasheet specifies FR-4 with bottom-layer thermal bias; solder mask opening over the pad must be full-size to maximize solder joint thermal conduction.
Can DMTH42M4SPS be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(ON) (normalized RDS(ON) increases with TJ, per Figure 6) enables inherent current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB trace lengths to minimize dynamic imbalance; gate resistors of 3.5 Ω are validated in the datasheet for 90A switching.
Does the body diode support synchronous rectification?
No-the intrinsic body diode is not optimized for synchronous rectification due to relatively high VSD (0.8–1.2 V) and tRR (62 ns). It is intended for freewheeling and clamping only. For synchronous rectification, an external low-VF Schottky or dedicated SR controller with external FETs is required.
DMTH42M4SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 79.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6968 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.06W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type K)
DMTH42M4SPS-13 FAQ
1.How can I place an order for DMTH42M4SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH42M4SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH42M4SPS-13 reliable?
The price and inventory of DMTH42M4SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH42M4SPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH42M4SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH42M4SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH42M4SPS-13?
DMTH42M4SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH42M4SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH42M4SPS-13?
For technical support, including DMTH42M4SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH42M4SPS-13 requirements.
6.How does Aetrix verify that DMTH42M4SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH42M4SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH42M4SPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH42M4SPS-13?
All DMTH42M4SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH42M4SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH42M4SPS-13 part is unused and in its original packaging.
Return procedure for DMTH42M4SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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