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Diodes Incorporated DMTH43M7LFG-7

Part No.:
DMTH43M7LFG-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH43M7LFG-7.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,486

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Product details

Overview

DMTH43M7LFG-7 from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 100A continuous drain current at TC = +25°C, with RDS(ON) of 3.0 mΩ @ VGS = 10V and 5.0 mΩ @ VGS = 5V, operating up to +175°C junction temperature - deployed in high-current DC-DC converter primary-side switching stages.

For engineers reviewing the DMTH43M7LFG-7 datasheet, DMTH43M7LFG-7 pinout, DMTH43M7LFG-7 application, or DMTH43M7LFG-7 equivalent, key selection criteria include its low RDS(ON) at 5V gate drive, 100% production-tested UIS robustness, thermal resistance RθJC of 2.3°C/W, and AEC-Q101 readiness for automotive power modules.

Technical Context

This MOSFET employs trench-gate silicon process optimized for conduction loss minimization while preserving fast switching performance. Its QGD × RDS(ON) figure-of-merit (FOM) is engineered for high-frequency synchronous rectification and motor phase-leg switching.

The device integrates an intrinsic body diode with tRR = 39.5 ns and QRR = 39.7 nC under IF = 15A, di/dt = 100 A/μs conditions, enabling efficient freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum blocking voltage for 12V–24V bus-level power conversion stages
RDS(ON) @ VGS = 10V 3.0 mΩ - Enables <1.2 W conduction loss at 20A, critical for thermally constrained PCB layouts
RDS(ON) @ VGS = 5V 5.0 mΩ - Supports logic-level gate drive compatibility with 5V microcontrollers or gate drivers
ID (continuous, TC = +25°C) 100 A - Sustains high-current motor phase or VRM output stage operation with minimal derating
TJ max +175°C - Allows operation in under-hood automotive environments or sealed industrial enclosures
RθJC 2.3°C/W - Enables direct heatsink mounting via exposed drain pad for >65W power dissipation capability
EAS 185.3 mJ - Confirmed avalanche energy rating ensures reliability during inductive load turn-off transients

Pinout & Package

Package: PowerDI®3333-8 - surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 4–8), UL 94V-0 molded plastic housing, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 Source Low-side reference node; tied to PCB ground plane for optimal EMI control and thermal path
2 Source Parallel source connection to reduce bondwire inductance and improve current sharing
3 Gate Control input requiring <30 nC total gate charge; sensitive to ringing due to low RG = 1.9 Ω
4–8 Drain (exposed pad) Main power path and primary thermal interface; soldered directly to copper thermal pad on PCB

Key Features

Feature Design Value
100% UIS tested in production Guarantees robustness against unclamped inductive switching events without derating design margins
+175°C rated junction temperature Eliminates need for additional thermal margin in engine-control or industrial motor-drive applications
QGD × RDS(ON) FOM Optimized trade-off between switching speed and conduction loss for 100–500 kHz DC-DC converters
Lead-free, halogen-free, antimony-free Complies with RoHS 3 and automotive green material requirements without compromising thermal performance
Low RDS(ON) at 5V drive Enables direct interfacing with standard 5V logic outputs, reducing gate driver component count

Applications

Motor Control DC-DC Converter

Use Scenario: High-power BLDC motor inverter stage for electric power steering (EPS) systems.

IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge configuration, commutated at 10–20 kHz.

Use Value: 5.0 mΩ RDS(ON) @ 5V enables direct MCU GPIO drive; +175°C rating supports under-hood ambient up to +125°C.

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V buck converter for server power supplies.

IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch operating continuously at 300 kHz.

Use Value: 3.0 mΩ RDS(ON) reduces conduction loss by >40% vs. comparable 40V MOSFETs; RθJC = 2.3°C/W allows compact heatsinking.

Power Management Automotive Body Control

Use Scenario: Load switch for battery-powered industrial equipment with hot-swap and reverse-polarity protection.

IC Role / Device Role / Timing Role: High-side or low-side power path controller with integrated overcurrent and thermal shutdown.

Use Value: 100A rating supports peak surge currents up to 400A (IDM); EAS = 185.3 mJ prevents failure during cable disconnect events.

Use Scenario: Window lift actuator driver in AEC-Q101 qualified vehicle platforms.

IC Role / Device Role / Timing Role: H-bridge leg switch handling bidirectional 30A stall current at 12V nominal.

Use Value: Production-tested UIS and +175°C rating meet automotive transient and thermal stress requirements per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPB037N04LGATMA1 (Infineon) RDS(ON) = 3.7 mΩ @ 10V; TO-263-7 package; RθJC = 1.6°C/W; no 5V-rated RDS(ON) spec Higher thermal efficiency but requires dedicated gate driver due to lack of 5V drive support Select when maximum thermal performance is prioritized and gate drive voltage ≥10V is available
STL220N4LF8AG (STMicroelectronics) RDS(ON) = 2.2 mΩ @ 10V; PowerFLAT 8x8 HV package; TJ max = +175°C; QG = 42 nC Lower RDS(ON) but higher gate charge increases switching loss above 200 kHz Select for ultra-low conduction loss in <200 kHz applications where gate drive strength permits higher QG

Compared with IPB037N04LGATMA1 and STL220N4LF8AG, DMTH43M7LFG-7 uniquely balances 5V logic-level drive capability, production-validated UIS, and industry-leading RDS(ON)/QGD FOM - making it optimal for space-constrained, thermally aggressive, and cost-sensitive automotive and industrial power stages.

Availability

DMTH43M7LFG-7 is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, and automotive body electronics requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for DMTH43M7LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power solutions, signal integrity products, and precision timing devices.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, designed specifically for high-current, high-temperature power conversion in automotive, industrial, and computing applications where thermal resilience and conduction efficiency are critical.

FAQ

What is the maximum allowable gate-source voltage for DMTH43M7LFG-7?

The absolute maximum VGS rating is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±16 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ≤±15 V with transient suppression, especially in noisy automotive environments where load-dump spikes may exceed 12 V.

Does DMTH43M7LFG-7 meet AEC-Q101 qualification?

Yes - Diodes Incorporated confirms this part is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. The datasheet explicitly states suitability for automotive applications requiring PPAP capability and change control, and the device undergoes full stress testing including HTGB, HTRB, and UIS per AEC-Q101 Rev D.

How is thermal performance affected when mounted on FR-4 versus metal-core PCB?

Thermal resistance RθJA is specified as 43°C/W on 2 oz FR-4 with 1-inch² copper pad; on aluminum-backed MCPCB with equivalent copper area, RθJA improves to ~12°C/W. However, RθJC remains fixed at 2.3°C/W - meaning heatsink-coupled performance is unchanged, but ambient-limited operation benefits significantly from MCPCB.

Can DMTH43M7LFG-7 be used in parallel configurations?

Yes - its positive temperature coefficient for RDS(ON) (shown in Figure 6 and 7) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance (<1 Ω difference), symmetrical layout, and individual gate resistors (≥5 Ω) to suppress oscillation. Derating total current by 15% is recommended for thermal margin.

DMTH43M7LFG-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2182 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
3.5W (Ta), 65.2W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMTH43M7LFG-7 FAQ

1.How can I place an order for DMTH43M7LFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M7LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M7LFG-7 reliable?

The price and inventory of DMTH43M7LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M7LFG-7 is usually 5 days.

3.What payment methods are accepted for DMTH43M7LFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M7LFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M7LFG-7?

DMTH43M7LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M7LFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M7LFG-7?

For technical support, including DMTH43M7LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M7LFG-7 requirements.

6.How does Aetrix verify that DMTH43M7LFG-7 is sourced from the original manufacturer or authorized distributors?

All DMTH43M7LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M7LFG-7 meets industry standards.

7.What is the process for return or replacement of DMTH43M7LFG-7?

All DMTH43M7LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M7LFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M7LFG-7 part is unused and in its original packaging.

Return procedure for DMTH43M7LFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH43M7LFG-7 Tags

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