Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH43M8LFG-13

Part No.:
DMTH43M8LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH43M8LFG-13.pdf
Description:
MOSFET N-CH 40V PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,125

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH43M8LFG-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 3.0mΩ RDS(ON) @ VGS=10V, 175°C maximum junction temperature, and AEC-Q101 qualification. It serves as a high-current synchronous rectifier or main switch in automotive and industrial DC-DC converters.

For engineers reviewing the DMTH43M8LFG-13 datasheet, DMTH43M8LFG-13 pinout, DMTH43M8LFG-13 application, or DMTH43M8LFG-13 equivalent, key selection criteria include RDS(ON) at 5V/10V gate drive, unclamped inductive switching rating, thermal resistance (RθJC = 2.3°C/W), and body diode recovery performance (QRR = 26.6nC).

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching trade-off. Its 100% production-tested UIS capability ensures robustness under inductive load transients, while the exposed drain pad enables direct thermal coupling to PCB copper.

The device exhibits strong temperature stability: RDS(ON) increases only 2× from 25°C to 175°C at VGS=10V (3.0mΩ → 6.0mΩ), and gate threshold voltage remains within 1.0–2.5V across -55°C to +175°C, supporting reliable turn-on in wide-temperature environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Supports 24V nominal bus systems with 66% derating margin against transient overvoltage.
RDS(ON) max 3.0mΩ @ VGS=10V - Enables ≤3W conduction loss at 100A, critical for high-efficiency 48V-to-12V converters.
ID continuous 100A @ TC=25°C - Requires direct thermal path to ≥1-inch² 2oz copper pad for rated current handling.
QG 40.1nC - Dictates gate driver power requirement (~400mW avg. at 1MHz switching with 10V swing).
RθJC 2.3°C/W - Allows <10°C junction rise above case at 65W dissipation, enabling compact heatsinkless designs.
EAS 165mJ - Sustains single-pulse inductive energy up to 1mH × (18.2A)² / 2 without failure.
TJ max +175°C - Permits operation in engine bay, motor control, or sealed industrial enclosures without active cooling.

Pinout & Package

Package: PowerDI3333-8 - surface-mount, thermally enhanced plastic package with exposed drain pad (pins 5–8), 3.3mm × 3.3mm footprint, 0.8mm height, UL 94V-0 rated molding compound.

Pin/Terminal Circuit Role Design Meaning
1 Gate Control input; requires ≥±20V rating and low-inductance routing to minimize ringing during 10ns-scale switching.
2 Source Power return node; tied to PCB ground plane and forms reference for gate drive and current sensing.
3 Drain Main power output; electrically and thermally connected to pins 5–8 via internal metal frame and exposed pad.
4 Source Second source connection; paralleled with Pin 2 to reduce source inductance in high-di/dt applications.
5–8 Drain Exposed drain pad terminals; must be soldered to ≥1-inch² 2oz copper area for thermal and current-carrying capacity.

Key Features

Feature Design Value
100% UIS tested Guarantees survival under worst-case inductive turn-off without external snubbers in motor drives or solenoid controls.
Low QGD × RDS(ON) 26.4 mΩ·nC - Reduces switching loss and improves hard-switching efficiency in 300–500kHz DC-DC topologies.
AEC-Q101 qualified Validated for automotive powertrain and chassis applications including EPS, ADAS camera power, and LED headlight drivers.
Green, RoHS-compliant Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); compatible with lead-free reflow profiles and long-term reliability requirements.

Applications

Automotive DC-DC Converter Industrial Motor Drive Inverter

Use Scenario: 48V-to-12V bidirectional converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck topology, switching at 300kHz with 100A peak current.

Use Value: 3.0mΩ RDS(ON) reduces conduction loss by 40% vs. comparable 4.5mΩ devices, improving system efficiency from 92% to 94.2% at 5kW.

Use Scenario: Three-phase inverter stage driving 5kW PMSM in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, handling 93A continuous current at 100°C ambient.

Use Value: 175°C rating allows full-rated current without derating in sealed enclosures, eliminating need for forced air cooling.

Server VRM Phase Block Renewable Energy Battery Optimizer

Use Scenario: Multiphase buck converter supplying CPU core voltage in AI accelerator servers.

IC Role / Device Role / Timing Role: Main switch operating at 1MHz with 60A RMS current per phase, requiring low QG and stable RDS(ON).

Use Value: 40.1nC total gate charge enables efficient drive with integrated DrMOS controllers, reducing gate driver losses by 22%.

Use Scenario: DC optimizers in solar microinverters, managing partial shading mitigation between panels.

IC Role / Device Role / Timing Role: High-efficiency buck-boost switch handling 40V–60V input, 30A continuous, with frequent partial-load cycling.

Use Value: Body diode QRR of 26.6nC minimizes reverse recovery loss during light-load discontinuous conduction mode, extending MPPT window.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFH7107TRPBF RDS(ON) = 2.7mΩ @ 10V but only rated to 150°C; no AEC-Q101 qualification; higher QG (52nC). Suitable for commercial server VRMs but not automotive under-hood use due to lower temperature rating. Select when cost sensitivity outweighs automotive qualification and thermal margin requirements.
DMTH43M8LFGQ Identical die and RDS(ON), but automotive-grade traceability, extended temperature screening, and PPAP documentation support. Required for Tier-1 automotive production; same electrical specs but certified for safety-critical subsystems. Choose for production programs needing ISO/TS 16949 compliance and full AEC-Q101 test reports.

Compared with IRFH7107TRPBF, DMTH43M8LFG-13 delivers 25°C higher thermal margin and lower gate charge, enabling smaller heatsinks and simpler drivers; versus DMTH43M8LFGQ, it lacks automotive traceability but offers identical performance at lower cost for non-automotive industrial use.

Availability

DMTH43M8LFG-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRM phase blocks requiring stable component supply, high-temperature reliability, and RoHS-compliant sourcing.

Supply support for DMTH43M8LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerFET™ family, engineered for high-current, high-temperature switching in space-constrained power conversion systems where thermal robustness and conduction efficiency are primary design constraints.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH43M8LFG-13 supports 85A continuous drain current at TC = +100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 100A rating at 25°C case temperature, maintaining safe junction temperature below 175°C under proper PCB thermal design.

Does this MOSFET require a gate resistor for EMI control?

Yes - a 1.6Ω gate resistor is used in the datasheet's dynamic characterization (tD(ON), tR) and recommended for EMI suppression. Lower values increase dv/dt and ringing; higher values slow switching and raise losses. For 300–500kHz operation, 1.0–2.2Ω is typical to balance speed, loss, and noise.

Can the body diode handle continuous forward current?

No - the body diode is rated for 3.05A continuous forward current (IS) and 400A pulsed (ISM). It is not intended for sustained conduction; its primary role is freewheeling during synchronous rectification. Extended conduction causes excessive self-heating due to VSD ≈ 0.8–1.0V and limited thermal path.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes - the PowerDI3333-8 package uses matte tin annealed finish over copper leadframe and is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260°C. Moisture sensitivity level is MSL1, allowing unlimited floor life before reflow without baking.

DMTH43M8LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
40.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2798 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2.62W (Ta), 65.2W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMTH43M8LFG-13 FAQ

1.How can I place an order for DMTH43M8LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M8LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M8LFG-13 reliable?

The price and inventory of DMTH43M8LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LFG-13 is usually 5 days.

3.What payment methods are accepted for DMTH43M8LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M8LFG-13?

DMTH43M8LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M8LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M8LFG-13?

For technical support, including DMTH43M8LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LFG-13 requirements.

6.How does Aetrix verify that DMTH43M8LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMTH43M8LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LFG-13 meets industry standards.

7.What is the process for return or replacement of DMTH43M8LFG-13?

All DMTH43M8LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M8LFG-13 part is unused and in its original packaging.

Return procedure for DMTH43M8LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH43M8LFG-13 Tags

  • DMTH43M8LFG-13
  • DMTH43M8LFG-13 PDF
  • DMTH43M8LFG-13 Datasheet
  • DMTH43M8LFG-13 Specifications
  • DMTH43M8LFG-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH43M8LFG-13
  • Buy DMTH43M8LFG-13
  • DMTH43M8LFG-13 Price
  • DMTH43M8LFG-13 Distributor
  • DMTH43M8LFG-13 Supplier
  • DMTH43M8LFG-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER