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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH43M8LFGQ-13

Name: DMTH43M8LFGQ-13
Brand: Diodes Incorporated
SKU: DMTH43M8LFGQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH43M8LFGQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMTH43M8LFGQ-13.pdf

Description:: MOSFET N-CH 40V PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMTH43M8LFGQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 100A continuous drain current at TC = +25°C, 3.0mΩ R_DS(ON) @ V_GS = 10V, and operation up to +175°C junction temperature. It serves as a high-current power switch in automotive motor control, DC-DC converters, and battery management systems.

For engineers reviewing the DMTH43M8LFGQ-13 datasheet, DMTH43M8LFGQ-13 pinout, DMTH43M8LFGQ-13 application, or DMTH43M8LFGQ-13 equivalent, key selection criteria include its low R_DS(ON) at 5V gate drive (5.0mΩ), 100% production-tested UIS capability, AEC-Q101 qualification with PPAP support, and thermal performance validated to +175°C TJ.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its R_DS(ON) remains stable across -55°C to +175°C, with normalized on-resistance variation ≤4× over that range at V_GS = 10V.

The device features a robust body diode with t_RR = 32.6ns and Q_RR = 26.6nC under IF = 15A/di/dt = 100A/μs conditions, and integrates a low Crss (88pF) to minimize Miller-induced turn-off delay in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche onset; defines system-level bus voltage compatibility (e.g., 24V automotive rails with margin)
R_DS(ON) @ V_GS = 10V	3.0mΩ max - Enables <1.2W conduction loss at 20A, critical for thermally constrained engine bay modules
R_DS(ON) @ V_GS = 5V	5.0mΩ max - Supports logic-level gate drive from MCU GPIO or low-voltage controllers without level-shifting
I_D Continuous @ T_C = +25°C	100A - Package-limited current rating; requires PCB copper thermal plane per datasheet layout guidelines
T_J Operating Range	-55°C to +175°C - Validated for under-hood applications including transmission control units and EPS modules
E_AS	165mJ - Energy-handling capability during unclamped inductive switching; ensures reliability in motor freewheeling events
Q_g	40.1nC typ - Gate charge value directly impacts driver IC selection and switching loss in 100–500kHz DC-DC designs

Pinout & Package

Package: PowerDI® 3333-8 - Thermally enhanced 8-pin molded plastic package with exposed drain pad (pins 4, 5, 6, 7, 8 connected internally to drain); UL 94V-0 rated, MSL Level 1, matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Main source terminal; connects to low-side return path; electrically tied to pins 2 and 3
2	Source	Parallel source connection for reduced bond wire inductance and improved current sharing
3	Source	Third source terminal; enables symmetric PCB layout for balanced thermal distribution
4	Drain	Exposed drain pad; primary thermal path to PCB copper; must be soldered to ≥1-in² 2oz copper pour
5	Drain	Internal drain connection; shares thermal mass with pin 4 for enhanced power dissipation
6	Drain	Drain terminal; used for high-current output routing in half-bridge configurations
7	Drain	Drain terminal; supports parallel drain routing in multi-phase converter designs
8	Drain	Drain terminal; completes 5-terminal drain structure for <2.3°C/W R_θJC thermal resistance
G	Gate	Control input; requires <2.44Ω gate resistance to limit ringing per SOA curves in Figure 12

Key Features

Feature	Design Value
AEC-Q101 qualified + PPAP capable	Validated for automotive safety-critical subsystems including EPS and ADAS power stages
100% UIS tested in production	Every unit screened for unclamped inductive switching robustness-no screening escapes
R_DS(ON) × Q_gd FOM = 26.4 mΩ·nC	Optimized trade-off between conduction loss and switching loss for 100–300kHz motor drives
+175°C maximum junction temperature	Enables placement near heat sources (e.g., IGBT modules, transformers) without derating
Halogen- and antimony-free "Green" construction	Meets EU RoHS 3 (2015/863/EU) and automotive OEM environmental compliance requirements

Applications

Electric Power Steering (EPS)

48V Mild Hybrid DC-DC Converter

Use Scenario: High-reliability H-bridge motor driver controlling steering assist torque in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side power switch in dual-phase synchronous rectification stage; handles bidirectional 80A peak currents.

Use Value: 3.0mΩ R_DS(ON) reduces conduction loss by >35% vs. legacy 4.5mΩ devices, enabling smaller heatsinks and extended duty cycle at 125°C ambient.

Use Scenario: Primary-side synchronous rectifier in 3kW bi-directional DC-DC converter linking 12V and 48V vehicle networks.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element operating at 200kHz with 50ns dead-time constraints.

Use Value: 88pF Crss minimizes Miller plateau duration, reducing shoot-through risk and enabling tighter timing margins in digital PWM controllers.

Onboard Charger (OBC) Input Stage

Brake-by-Wire Actuator Driver

Use Scenario: AC-DC PFC boost switch in 6.6kW EV onboard charger operating in continuous conduction mode.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch handling 40A RMS with 100ns turn-off fall time.

Use Value: 165mJ E_AS withstands worst-case line surge events without failure, eliminating need for external snubbers in compact OBC layouts.

Use Scenario: Redundant high-side driver in electro-hydraulic brake actuator with dual independent power paths.

IC Role / Device Role / Timing Role: Safety-critical load switch controlled via ASIL-B compliant MCU with diagnostic feedback loop.

Use Value: AEC-Q101 qualification plus full traceability and IATF 16949 manufacturing ensures zero-defect delivery for ISO 26262 ASIL-D system integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	40V, 220A, 1.8mΩ @ 10V, PowerFLAT 5x6 package; higher current but larger footprint and no AEC-Q101 documentation publicly available	Targeted at industrial UPS, not automotive-certified; lacks PPAP support and +175°C validation	Select only if board space allows larger package and AEC-Q101 compliance is not required
IXTQ110N10P	100V, 110A, 9.5mΩ @ 10V, TO-264 package; higher voltage rating but 3× higher R_DS(ON) and no automotive qualification	Designed for industrial motor drives; unsuitable for 40V automotive bus due to excessive conduction loss and lack of thermal derating data	Not recommended for automotive use; consider only for non-automotive 100V applications requiring higher breakdown margin

Compared with STL220N4LF8AG and IXTQ110N10P, DMTH43M8LFGQ-13 delivers optimal balance of AEC-Q101 assurance, +175°C operation, and 3.0mΩ R_DS(ON) in a compact 3.3×3.3mm footprint-making it uniquely suited for space-constrained, thermally aggressive automotive power stages where qualification and reliability are non-negotiable.

Availability

DMTH43M8LFGQ-13 is available at Aetrix Electronics and suitable for electric power steering, 48V mild hybrid DC-DC conversion, and onboard charger applications requiring stable component supply, full automotive traceability, and long-term lifecycle support.

Supply support for DMTH43M8LFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-current switching in engine bay, chassis, and electrification systems where thermal resilience and production-tested robustness are mandatory.

FAQ

What is the maximum allowable case temperature for continuous 100A operation?

The DMTH43M8LFGQ-13 sustains 100A continuous drain current only at T_C = +25°C, as specified in the Absolute Maximum Ratings table. At T_C = +100°C, the rated current drops to 85A per Figure 13. Operation above 25°C requires proportional current derating using the curve in Figure 13 or the formula ID = 100A × (1 − (TC − 25)/75).

Does this MOSFET require a negative gate turn-off voltage to ensure reliable commutation?

No. The device has a gate threshold voltage V_GS(TH) of 1.0–2.5V and exhibits no parasitic turn-on when driven with 0V gate bias. Negative gate drive is unnecessary; standard 0V/10V or 0V/5V logic-level switching fully controls the channel without shoot-through risk in properly laid-out layouts.

How is the 100% UIS test performed during production?

Each unit undergoes unclamped inductive switching stress at I_AS = 18.2A with L = 1mH, verifying energy absorption up to E_AS = 165mJ. This test is conducted on 100% of shipped units-not sample-based-and is documented in Diodes' PPAP submission for this part number.

Can the PowerDI3333-8 package be hand-soldered for prototype evaluation?

Hand-soldering is not recommended. The exposed drain pad requires precise thermal profile control and full wetting to a large copper area to achieve the specified R_θJC = 2.3°C/W. Prototype evaluation should use reflow soldering per J-STD-020, with preheating to 150°C, soak at 180–200°C for 60–90s, and peak at 260°C for ≤10s.

DMTH43M8LFGQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2798 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.62W (Ta), 65.2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMTH43M8LFGQ-13 FAQ

1.How can I place an order for DMTH43M8LFGQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M8LFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M8LFGQ-13 reliable?

The price and inventory of DMTH43M8LFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LFGQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH43M8LFGQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LFGQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M8LFGQ-13?

DMTH43M8LFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M8LFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M8LFGQ-13?

For technical support, including DMTH43M8LFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LFGQ-13 requirements.

6.How does Aetrix verify that DMTH43M8LFGQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH43M8LFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LFGQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH43M8LFGQ-13?

All DMTH43M8LFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LFGQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M8LFGQ-13 part is unused and in its original packaging.

Return procedure for DMTH43M8LFGQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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