Diodes Incorporated DMTH43M8LFGQ-7
- Part No.:
- DMTH43M8LFGQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH43M8LFGQ-7.pdf
- Description:
- MOSFET N-CH 40V PWRDI3333
- Quantity:
- Payment:

- Shipping:

Inventory:1,298
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Product details
Overview
DMTH43M8LFGQ from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 3.0mΩ RDS(ON) at VGS = 10V and supports unclamped inductive switching up to 18.2A/165mJ - designed for high-reliability automotive motor control and DC-DC converter primary-side switching.
For engineers reviewing the DMTH43M8LFGQ datasheet, DMTH43M8LFGQ pinout, DMTH43M8LFGQ application, or DMTH43M8LFGQ equivalent, key selection criteria include its low RDS(ON) × Qgd figure-of-merit (FOM), robust avalanche capability, thermal performance at elevated ambient temperatures, and PPAP-ready automotive qualification status.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its RDS(ON) remains stable across −55°C to +175°C junction temperature, with normalized on-resistance variation ≤4× over that range at VGS = 10V.
The device features an integrated body diode with 32.6ns reverse recovery time and 26.6nC QRR at 100A/μs di/dt, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Gate charge parameters (Qg = 40.1nC, Qgd = 8.8nC) support optimized gate drive design for <10ns turn-on delay and 12.4ns turn-off fall time under 1.6Ω gate resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum drain-source blocking voltage for 12V/24V automotive systems with transient margin |
| RDS(ON) @ VGS = 10V | 3.0mΩ max - Enables ≤3W conduction loss at 100A, critical for high-efficiency motor drivers |
| ID Continuous @ TC = 25°C | 100A - Package-limited current rating supporting high-power DC-DC output stages |
| EAS | 165mJ - Confirmed avalanche energy rating ensures reliability in inductive load switching without snubbers |
| TJ Operating Range | −55°C to +175°C - Supports under-hood placement in engine control units and battery management systems |
| Qgd × RDS(ON) | 26.4 mΩ·nC - Low FOM enables high-frequency switching (>100kHz) with minimal switching loss trade-off |
| RθJC | 2.3°C/W - Thermal resistance from junction to exposed drain pad enables direct heatsinking in compact layouts |
Pinout & Package
Package: PowerDI3333-8 - thermally enhanced 8-pin molded plastic package with exposed drain pad for low RθJC; UL 94V-0 rated, halogen/antimony-free, matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce bondwire inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to exposed copper pad - primary thermal path and high-current return path |
| Top center (between pins 4 & 5) | Gate (G) | Single gate terminal positioned for symmetric layout; requires <2.5Ω gate resistor to limit ringing in 400A pulsed operation |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Guaranteed parametric performance up to maximum junction temperature - eliminates derating in engine bay environments |
| 100% production UIS testing | Every unit validated for 18.2A/165mJ avalanche energy - ensures field reliability in motor stall or short-circuit events |
| Low RDS(ON) × Qgd FOM | 26.4 mΩ·nC - balances conduction and switching losses for optimal efficiency in 50–200kHz DC-DC converters |
| AEC-Q101 qualified + PPAP capable | Manufactured in IATF 16949 certified facilities with full change control - meets Tier 1 automotive supply chain requirements |
| Green, RoHS-compliant construction | <900ppm Br/Cl, <1000ppm Sb - satisfies EU ELV and OEM environmental compliance mandates without performance compromise |
Applications
| Electric Power Steering (EPS) | 48V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge driver for brushless EPS motor with peak loads >80A and ambient up to 125°C. IC Role / Device Role / Timing Role: Primary-side high-side/low-side switch in three-phase inverter stage, operating at 10–20kHz PWM. Use Value: 3.0mΩ RDS(ON) minimizes I²R heating during sustained assist torque; +175°C rating avoids thermal shutdown during parking maneuvers. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V DC-DC converter for 48V battery management. IC Role / Device Role / Timing Role: High-current, low-loss switching element in phase-shifted full-bridge topology with ZVS operation. Use Value: 40.1nC total gate charge enables clean 100kHz switching with <1W gate drive loss; 2.3°C/W RθJC supports direct PCB copper heatsinking. |
| Automotive HVAC Blower Motor Control | Onboard Charger (OBC) Input Stage |
|
Use Scenario: Single-phase inverter driving high-power centrifugal blower fan in cabin climate system. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, handling 60A continuous with 200A peak surge. Use Value: 165mJ EAS withstands inductive kickback during rapid PWM commutation; 32.6ns tRR reduces body diode conduction loss. |
Use Scenario: Active front-end (AFE) switch in OBC AC-DC conversion stage for EV charging up to 11kW. IC Role / Device Role / Timing Role: High-reliability power switch in totem-pole PFC circuit operating at 65–150kHz. Use Value: Stable RDS(ON) over temperature ensures consistent efficiency across charge cycles; AEC-Q101 qualification validates long-term field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTQ100N40P | TO-264 package, 4.2mΩ @ 10V, 100A, RθJC = 0.4°C/W - higher thermal performance but larger footprint | Preferred where forced-air cooling is available and board space permits discrete heatsink mounting | Select when thermal budget allows larger package and lower RθJC outweighs PCB area cost |
| STL220N4F7AG | PowerFLAT 5x6 package, 2.7mΩ @ 10V, 120A, TJmax = +175°C - slightly lower RDS(ON) but no production UIS test data published | Suitable for space-constrained 48V systems where avalanche validation is handled at system level | Choose when footprint reduction is critical and system-level stress testing replaces component-level UIS screening |
Compared with IXTQ100N40P and STL220N4F7AG, DMTH43M8LFGQ uniquely combines AEC-Q101 PPAP readiness, production-tested avalanche robustness, and PowerDI3333-8's optimized thermal-electrical balance - making it the preferred choice for safety-critical, volume-production automotive power stages where qualification traceability and field reliability are non-negotiable.
Availability
DMTH43M8LFGQ is available at Aetrix Electronics and suitable for electric power steering, 48V mild hybrid DC-DC conversion, and onboard charger input stages requiring stable component supply with full automotive qualification documentation.
Supply support for DMTH43M8LFGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line - engineered specifically for AEC-Q101 compliance, high-temperature operation, and robustness in safety-critical vehicle subsystems including EPS, battery management, and ADAS power domains.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
At TC = +100°C, the DMTH43M8LFGQ supports 85A continuous drain current with VGS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package and must be verified against actual PCB copper area and airflow conditions in the target application.
Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise automotive environments?
No - the device has a gate threshold voltage (VGS(TH)) of 1.0–2.5V at 25°C and remains fully enhanced down to −55°C. A gate drive of 0V is sufficient for turn-off; however, applying −5V improves noise immunity and reduces Miller-induced false turn-on during high di/dt events in motor drive applications.
Is the body diode suitable for synchronous rectification in a 48V–12V buck converter?
Yes - the body diode exhibits 32.6ns reverse recovery time and 26.6nC QRR at 100A/μs di/dt, enabling efficient freewheeling in synchronous buck topologies up to 200kHz. However, external Schottky or MOSFET synchronous rectifiers are recommended for >95% efficiency targets due to VSD = 0.8–1.0V forward drop.
How does the RDS(ON) change at 175°C junction temperature?
At TJ = +175°C and VGS = 10V, RDS(ON) increases to 6.0mΩ max (vs. 3.0mΩ at 25°C), representing a 2× increase. This is confirmed by Figure 7 in the datasheet and must be accounted for in worst-case conduction loss calculations for high-ambient applications like engine control modules.
DMTH43M8LFGQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2798 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.62W (Ta), 65.2W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMTH43M8LFGQ-7 FAQ
1.How can I place an order for DMTH43M8LFGQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH43M8LFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH43M8LFGQ-7 reliable?
The price and inventory of DMTH43M8LFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LFGQ-7 is usually 5 days.
3.What payment methods are accepted for DMTH43M8LFGQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LFGQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH43M8LFGQ-7?
DMTH43M8LFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH43M8LFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH43M8LFGQ-7?
For technical support, including DMTH43M8LFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LFGQ-7 requirements.
6.How does Aetrix verify that DMTH43M8LFGQ-7 is sourced from the original manufacturer or authorized distributors?
All DMTH43M8LFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LFGQ-7 meets industry standards.
7.What is the process for return or replacement of DMTH43M8LFGQ-7?
All DMTH43M8LFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LFGQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH43M8LFGQ-7 part is unused and in its original packaging.
Return procedure for DMTH43M8LFGQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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