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Diodes Incorporated DMTH43M8LFVW-13

Part No.:
DMTH43M8LFVW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH43M8LFVW-13.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,796

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Product details

Overview

DMTH43M8LFVW-13 from Diodes Incorporated is a 40V, 96A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for +175°C operation, with RDS(ON) = 4.3mΩ @ VGS = 10V and 7.5mΩ @ VGS = 4.5V, optimized for high-efficiency DC-DC converters and automotive power management.

For engineers reviewing the DMTH43M8LFVW-13 datasheet, DMTH43M8LFVW-13 pinout, DMTH43M8LFVW-13 application, or DMTH43M8LFVW-13 equivalent, this device supports high-current switching at elevated ambient temperatures, features wettable flanks for automated optical inspection, and delivers robust UIS-rated avalanche performance in compact surface-mount form.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low RDS(ON) while maintaining fast switching characteristics: Qgd × RDS(ON) figure-of-merit is optimized for synchronous buck stages, and its 100% production-tested UIS ensures reliability under inductive load transients.

The device integrates a low-VSD body diode (0.8–1.0V @ 20A), operates across –55°C to +175°C junction range, and uses matte tin-annealed copper leadframe for solderability-enabling use in thermally demanding automotive and industrial power rails without derating penalties.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Maximum drain-source blocking voltage for 12V/24V automotive and industrial bus applications
RDS(ON) @ 10V 4.3mΩ - Enables ≤0.86W conduction loss at 96A continuous drain current on heatsinked PCB
RDS(ON) @ 4.5V 7.5mΩ - Supports logic-level gate drive in 3.3V/5V controller systems without level-shifting
Qg @ 10V 36.9nC - Determines gate driver power requirement and switching loss in 100–500kHz DC-DC topologies
TJ max +175°C - Allows operation in engine bay, under-hood, or sealed industrial enclosures without thermal throttling
Ciss 2737pF - Impacts gate drive loop stability and EMI filtering design in high-frequency synchronous rectification
EAS 83.2mJ - Specifies single-pulse avalanche energy handling for fault-tolerant motor control and power supply protection

Pinout & Package

Package: PowerDI3333-8 (SWP) with exposed drain pad for thermal dissipation and wettable flank terminals for AOI compatibility.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Bottom View) Drain (D), Source (S), Gate (G) Pins 1–3 & 6–8: Drain (common thermal path); Pins 4–5: Source; Pin 7: Gate - verified per Diodes DS45270 Rev.2 Figure 1 equivalent circuit and bottom-view marking diagram

Key Features

Feature Design Value
+175°C rated junction temperature Enables direct placement in high-ambient zones (e.g., near engines or power transformers) without external cooling
Wettable flank terminals Supports automated optical inspection of solder joint integrity on bottom-side SMT assembly lines
100% production UIS testing Guarantees minimum 12.9A avalanche current and 83.2mJ energy handling per unit-no screening failures
Low Qgd × RDS(ON) FoM Reduces switching losses and improves efficiency in high-frequency (>300kHz) synchronous buck regulators
Halogen- and antimony-free "Green" compound Meets automotive PPAP requirements for material compliance (Br+Cl <1500ppm, Sb <1000ppm)

Applications

Automotive Body Control Module Industrial DC-DC Converter

Use Scenario: High-side load switch for headlight LED drivers and HVAC blower motors in 12V/24V vehicle architectures.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC, managing up to 96A peak loads with minimal voltage drop.

Use Value: 4.3mΩ RDS(ON) limits voltage drop to <0.41V at 96A, reducing thermal stress and enabling smaller heatsinks in space-constrained modules.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom and server power supplies.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage operating at 300kHz with 10V gate drive.

Use Value: 36.9nC total gate charge enables efficient drive with standard 2A peak gate drivers, minimizing dead-time losses.

Backlight LED Driver Motor Drive H-Bridge Leg

Use Scenario: PWM-controlled current sink for large-area LCD backlighting in automotive infotainment displays.

IC Role / Device Role / Timing Role: N-channel low-side switch modulating up to 73A at 4.5V gate drive in constant-current configuration.

Use Value: 7.5mΩ RDS(ON) at 4.5V allows direct microcontroller GPIO drive, eliminating level-shifters and reducing BOM count.

Use Scenario: Half-bridge leg in 24V brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-current switching element subjected to repetitive inductive flyback during PWM commutation.

Use Value: 83.2mJ EAS rating ensures reliable operation under worst-case inductive turn-off without snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP40N10P 100V VDSS, 10mΩ @ 10V, TO-220 package, RθJC = 1.5°C/W Higher voltage margin but larger footprint and no wettable flanks; requires through-hole assembly Select when >40V transient immunity is required and board space permits discrete through-hole mounting
SUD50N04-16P 40V VDSS, 4.2mΩ @ 10V, PowerPAK SO-8, RθJA = 50°C/W Similar RDS(ON) but higher thermal resistance; lacks +175°C rating and UIS production test Choose only for non-automotive, lower-temperature environments where cost is prioritized over ruggedness

Compared with IXTP40N10P and SUD50N04-16P, DMTH43M8LFVW-13 uniquely combines automotive-grade +175°C operation, wettable flanks, and 100% UIS testing in a thermally efficient PowerDI3333-8 package-making it the only option qualified for under-hood DC-DC conversion with zero derating at 100°C ambient.

Availability

DMTH43M8LFVW-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and LED backlight drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH43M8LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for thermally constrained, high-efficiency switching applications where junction temperature resilience and production-level avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH43M8LFVW-13 supports 68A continuous drain current at case temperature +100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table (DS45270 Rev.2, page 2). This value reflects thermal derating based on RθJC = 2.3°C/W and maximum TJ = +175°C, ensuring safe operation in high-power density layouts.

Does this MOSFET require a gate resistor for stability in 300kHz switching?

A gate resistor of 1.6Ω is used in the datasheet's dynamic characterization (tD(ON), tR), confirming stable switching at 300kHz with standard gate drivers. The device's Rg = 2.4Ω (typical) and Ciss = 2737pF yield a natural gate time constant of ~6.6ns, making 1–5Ω external resistors sufficient to damp ringing without compromising rise/fall times.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-the PowerDI3333-8 (SWP) package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60s above 217°C). Its matte tin-annealed leadframe meets MIL-STD-202 Method 208 solderability requirements, ensuring reliable wetting on OSP- or ENIG-finished PCBs.

Can this MOSFET replace older TO-252 devices in existing designs?

Yes-its PowerDI3333-8 footprint (3.3mm × 3.3mm) is smaller than TO-252 (6.5mm × 6.5mm) but offers superior thermal performance (RθJC = 2.3°C/W vs. ~3.5°C/W typical for TO-252). Layout adaptation is required due to different pin mapping and exposed drain location, but thermal and electrical performance improves significantly in space-constrained upgrades.

DMTH43M8LFVW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2737 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 65W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMTH43M8LFVW-13 FAQ

1.How can I place an order for DMTH43M8LFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M8LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M8LFVW-13 reliable?

The price and inventory of DMTH43M8LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LFVW-13 is usually 5 days.

3.What payment methods are accepted for DMTH43M8LFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M8LFVW-13?

DMTH43M8LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M8LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M8LFVW-13?

For technical support, including DMTH43M8LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LFVW-13 requirements.

6.How does Aetrix verify that DMTH43M8LFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH43M8LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LFVW-13 meets industry standards.

7.What is the process for return or replacement of DMTH43M8LFVW-13?

All DMTH43M8LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M8LFVW-13 part is unused and in its original packaging.

Return procedure for DMTH43M8LFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH43M8LFVW-13 Tags

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