My Inquiry
My Account
Diodes Incorporated DMTH43M8LFVW-7
- Part No.:
- DMTH43M8LFVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH43M8LFVW-7.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:5,868
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMTH43M8LFVW-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 96A continuous drain current at TC = +25°C, with RDS(ON) of 4.3mΩ @ VGS = 10V and 7.5mΩ @ VGS = 4.5V, operating up to +175°C - deployed in high-efficiency DC-DC converters for automotive infotainment power rails.
For engineers reviewing the DMTH43M8LFVW-7 datasheet, DMTH43M8LFVW-7 pinout, DMTH43M8LFVW-7 application, or DMTH43M8LFVW-7 equivalent, this device is selected for high-current, high-temperature switching where low conduction loss, robust UIS performance, and wettable flank optical inspection capability are critical design requirements.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) × Qgd figure-of-merit (FOM), enabling fast switching with minimal overlap loss in synchronous buck topologies. Its 100% production-tested unclamped inductive switching (UIS) ensures reliability under hard-switching stress conditions.
The device features a thermally enhanced PowerDI3333-8 package with exposed drain pad, achieving RθJC = 2.3°C/W and supporting 65W total power dissipation at TC = +25°C. Gate threshold voltage (VGS(TH)) is tightly specified at 1–2.5V, ensuring stable turn-on across -55°C to +175°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche onset; sets upper limit for input voltage in 12V/24V automotive DC-DC stages. |
| RDS(ON) @ 10V | 4.3mΩ - Enables ≤0.86W conduction loss at 96A; critical for thermal management in compact power modules. |
| RDS(ON) @ 4.5V | 7.5mΩ - Supports logic-level gate drive from 3.3V/5V controllers without level-shifting, reducing BOM count. |
| ID (TC=25°C) | 96A - Continuous current rating referenced to case temperature; defines heatsink sizing when mounted on copper plane. |
| TJ Range | -55°C to +175°C - Qualified for under-hood automotive environments and industrial motor control junctions. |
| Qg @ 10V | 36.9nC - Determines gate driver power requirement and switching speed; balances efficiency vs. EMI in 300–1000kHz designs. |
| EAS | 83.2mJ - Energy-handling capability during inductive turn-off; validates robustness in boost converter freewheeling phase. |
Pinout & Package
Package: PowerDI3333-8 (SWP, Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for automated optical inspection (AOI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain (common source connection) | All pins 1–8 connect internally to the exposed drain pad; provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Source (S) | Source terminal (pins 1–4 bottom-side) | Source leads are bonded to internal source metallization; used for current return and gate drive reference in half-bridge configurations. |
| Gate (G) | Control input (pin 5 top-side) | Single gate input with 2.4Ω typical gate resistance; designed for direct drive from PWM controllers without external gate resistor in most cases. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated operation | Enables placement in high-ambient zones (e.g., near engine bay ECUs) without derating or forced cooling. |
| Wettable flank terminals | Supports automated optical solder-joint inspection (AOI) on bottom-side pins, improving manufacturing yield in automotive SMT lines. |
| 100% UIS tested | Each unit undergoes unclamped inductive switching stress test, verifying ruggedness against voltage overshoot during load dump events. |
| Low Qgd × RDS(ON) FOM | Reduces switching loss trade-off: achieves <1.5× lower FOM than comparable 40V TrenchFETs, improving light-load efficiency. |
| Halogen & antimony free | Meets automotive "Green" standards (<900ppm Br/Cl, <1000ppm Sb); supports RoHS 3 and IATF 16949-compliant supply chains. |
Applications
| Automotive DC-DC Converters | LED Backlight Drivers |
|---|---|
|
Use Scenario: Step-down conversion from 12V battery to 3.3V/5V for ADAS camera modules and display controllers. IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500kHz buck regulator, handling peak currents >80A during transient loads. Use Value: 4.3mΩ RDS(ON) limits conduction loss to <2.7W at full load, enabling passive cooling in space-constrained junction box assemblies. |
Use Scenario: Constant-current LED string control in instrument cluster backlighting with PWM dimming. IC Role / Device Role / Timing Role: Low-side switch modulating 5A–15A LED strings at 1–20kHz, synchronized to display refresh timing. Use Value: 7.5mΩ RDS(ON) @ 4.5V allows direct drive from MCU GPIO, eliminating level shifter and reducing layout complexity. |
| Industrial Motor Control | Server VRM High-Side Switch |
|
Use Scenario: Half-bridge leg in 24V BLDC gate driver for HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side switch with bootstrap gate drive, operating at 20kHz with 100ns dead-time constraints. Use Value: 36.9nC total gate charge enables fast turn-on (<11ns rise time) while maintaining <10V Miller plateau, minimizing shoot-through risk. |
Use Scenario: High-current phase-leg switch in 48V-to-1V server VRM delivering >200A per phase. IC Role / Device Role / Timing Role: Primary high-side MOSFET in multiphase buck converter, switching at 1MHz with tight duty-cycle control. Use Value: 2.3°C/W RθJC allows direct thermal coupling to cold plate, sustaining 96A continuous without exceeding 125°C junction temp. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP40N40P | 400V VDSS, 40mΩ RDS(ON), TO-220 package, RθJC = 1.5°C/W but no wettable flanks. | Higher voltage margin but 10× higher RDS(ON); suitable only for low-current, high-voltage flyback snubbers - not DC-DC primary switches. | Select only if system requires >100V blocking and discrete heatsinking is available; unsuitable for space-constrained automotive modules. |
| STL220N4F7AG | 40V VDSS, 2.2mΩ RDS(ON) @ 10V, PowerFLAT 5x6 package, RθJC = 1.8°C/W, AEC-Q101 qualified. | Lower RDS(ON) but no production UIS testing; lacks wettable flanks and +175°C extended temp rating. | Prefer for cost-sensitive non-safety-critical 12V systems where maximum efficiency outweighs ruggedness; avoid in engine compartment deployments. |
Compared with IXTP40N40P and STL220N4F7AG, DMTH43M8LFVW-7 uniquely combines automotive-grade +175°C operation, wettable flank AOI support, and production-tested UIS - making it the only option validated for under-hood DC-DC converters requiring zero field failure in harsh thermal cycling.
Availability
DMTH43M8LFVW-7 is available at Aetrix Electronics and suitable for automotive power management, LED backlighting, and industrial DC-DC converter designs requiring stable component supply across extended temperature ranges and high-reliability manufacturing.
Supply support for DMTH43M8LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for high-efficiency, high-temperature switching in automotive body electronics and ADAS subsystems.
FAQ
What is the maximum allowable gate-source voltage for DMTH43M8LFVW-7?
The absolute maximum VGS is ±20V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +12V to +15V with a series resistor to limit peak current during fast transitions, especially in high-dV/dt environments like motor drives.
Does DMTH43M8LFVW-7 require a gate resistor in typical DC-DC applications?
A gate resistor is recommended despite the device's 2.4Ω intrinsic Rg. A 2.2Ω to 10Ω external resistor controls dV/dt, suppresses ringing caused by PCB parasitics, and prevents false triggering from Miller-induced spikes - particularly critical in synchronous buck converters operating above 300kHz.
How is thermal performance affected when mounted on FR-4 versus metal-core PCB?
On standard FR-4 (2oz Cu), RθJA is 41°C/W and RθJC is 2.3°C/W. On aluminum-backed MCPCB with thermal vias to the baseplate, RθJA improves to ~12°C/W. The exposed drain pad must be soldered to ≥100mm² copper area with ≥6 thermal vias (0.3mm diameter) to achieve rated 96A current capacity.
Is DMTH43M8LFVW-7 qualified to AEC-Q101 for automotive use?
While the device is rated for +175°C operation and built in IATF 16949-certified facilities, Diodes does not list DMTH43M8LFVW-7 as AEC-Q101 qualified in its official product definitions. For AEC-Q101-compliant alternatives, contact Diodes' automotive team for PPAP-capable variants such as the DMT43M8LPSQ-7.
DMTH43M8LFVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Ta), 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2737 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMTH43M8LFVW-7 FAQ
1.How can I place an order for DMTH43M8LFVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH43M8LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH43M8LFVW-7 reliable?
The price and inventory of DMTH43M8LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LFVW-7 is usually 5 days.
3.What payment methods are accepted for DMTH43M8LFVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LFVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH43M8LFVW-7?
DMTH43M8LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH43M8LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH43M8LFVW-7?
For technical support, including DMTH43M8LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LFVW-7 requirements.
6.How does Aetrix verify that DMTH43M8LFVW-7 is sourced from the original manufacturer or authorized distributors?
All DMTH43M8LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LFVW-7 meets industry standards.
7.What is the process for return or replacement of DMTH43M8LFVW-7?
All DMTH43M8LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LFVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH43M8LFVW-7 part is unused and in its original packaging.
Return procedure for DMTH43M8LFVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMTH43M8LFVW-7 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
