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Diodes Incorporated DMTH43M8LFVWQ-13

Part No.:
DMTH43M8LFVWQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH43M8LFVWQ-13.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,026

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Product details

Overview

DMTH43M8LFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 4.3mΩ RDS(ON) @ VGS=10V, 96A continuous drain current at TC=+25°C, and rated for +175°C operation-designed for automotive DC-DC converters and backlighting power stages.

For engineers reviewing the DMTH43M8LFVWQ-13 datasheet, DMTH43M8LFVWQ-13 pinout, DMTH43M8LFVWQ-13 application, or DMTH43M8LFVWQ-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Qgd×RDS(ON) figure-of-merit, and IATF 16949-manufactured traceability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (1–2.5V) enables reliable turn-on with standard 3.3V/5V logic-level drivers, while the 2.3°C/W RθJC supports high-power density thermal design when mounted on copper pads.

The device integrates a robust body diode with 36ns reverse recovery time and 36nC QRR, enabling efficient synchronous rectification in buck converters. Its Ciss (2737pF), Coss (835pF), and Crss (67pF) values are tuned to balance EMI control and switching speed under 20V VDS conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Maximum blocking voltage for 12V/24V automotive bus applications with margin against load-dump transients.
RDS(ON) 4.3mΩ @ VGS=10V - Enables <1.7W conduction loss at 20A, critical for thermally constrained power modules.
ID (TC=25°C) 96A - Supports high-current output stages in engine control units and ADAS domain controllers without parallel devices.
TJ Range −55°C to +175°C - Qualified for under-hood placement in powertrain and chassis systems per AEC-Q101 stress testing.
Qg 36.9nC @ VGS=10V - Determines gate driver power requirement; enables <100ns turn-on with 0.5A peak drive current.
EAS 83.2mJ - Specifies single-pulse avalanche energy handling capability, supporting inductive load switching without snubbers.
RθJC 2.3°C/W - Enables direct thermal path to PCB copper, allowing >50W dissipation with minimal heatsink area.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, wettable flank, exposed drain pad for thermal and electrical connection. Dimensions: 3.30mm × 3.30mm × 0.80mm (L×W×H), 0.65mm pitch, matte tin annealed terminals.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain) Drain (common source node) All eight pins connect to internal drain metallization and exposed bottom pad-provides low-inductance, high-current path and primary thermal conduction route.
Source (S) Source terminal Two dedicated source leads (pins 1 & 8 per top view marking diagram) reduce source inductance and improve gate-drive stability in high-di/dt switching.
Gate (G) Gate terminal Single gate lead (pin 3 per top view) enables compact layout; low 2.4Ω gate resistance minimizes ringing during hard switching.

Key Features

Feature Design Value
+175°C rated junction temperature Enables operation in engine bay locations where ambient exceeds 125°C without derating or forced cooling.
Wettable flank package Facilitates automated optical inspection (AOI) of solder joint integrity on all four side edges-critical for zero-defect automotive manufacturing.
100% production UIS tested Each unit passes unclamped inductive switching test (12.9A, 83.2mJ), ensuring field reliability in motor drive and solenoid control applications.
Low Qgd × RDS(ON) FOM 2.4nC·mΩ - Reduces switching losses and improves efficiency in 200–500kHz DC-DC converters used in infotainment and ADAS subsystems.
AEC-Q101 qualification & PPAP support Validated across HTRB, HTGB, UHAST, and temperature cycling; full documentation available for Tier-1 automotive OEM compliance audits.

Applications

Automotive DC-DC Converters LED Backlight Drivers

Use Scenario: High-efficiency 12V-to-5V/3.3V buck converter supplying power to radar sensors and camera modules in ADAS systems.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 300kHz with 4.5V gate drive.

Use Value: 4.3mΩ RDS(ON) reduces conduction loss by 32% vs. legacy 6.5mΩ MOSFETs, enabling 95.2% peak efficiency at 15A load.

Use Scenario: Constant-current LED string driver for instrument cluster and center display backlighting in electric vehicles.

IC Role / Device Role / Timing Role: Low-side PWM switch controlling up to 8A LED current with 100ns minimum on-time capability.

Use Value: 7.5mΩ RDS(ON) @ 4.5V ensures <0.5W loss at full current, eliminating need for external heatsinking in space-constrained dashboards.

Engine Control Unit (ECU) Power Management Body Control Module (BCM) Load Switching

Use Scenario: 40V-rated load switch for fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 100V inductive flyback spikes with integrated avalanche ruggedness.

Use Value: 83.2mJ EAS withstands worst-case inductive energy without failure, reducing need for external TVS clamping components.

Use Scenario: Smart high-side load switch for HVAC blower motors and seat heater circuits in BCMs.

IC Role / Device Role / Timing Role: Protected power switch with built-in overcurrent and thermal shutdown, controlled via CAN/LIN interface.

Use Value: +175°C rating allows direct mounting on BCM PCB near heat-generating MCU, simplifying thermal management architecture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP40N10P 100V VDSS, 10mΩ RDS(ON), TO-220 package, no AEC-Q101 qualification Higher voltage margin but larger footprint and no automotive qualification; unsuitable for PPAP-controlled programs Select only for non-automotive industrial 100V applications requiring higher blocking voltage.
STL220N4F7AG 40V VDSS, 2.2mΩ RDS(ON) @ 10V, PowerFLAT 5x6 package, AEC-Q101 qualified Lower RDS(ON) but smaller thermal pad area (RθJC = 3.0°C/W); requires tighter layout control for same power dissipation Prefer for space-constrained designs needing <2mΩ performance, provided PCB copper area supports higher thermal resistance.

Compared with IXTP40N10P and STL220N4F7AG, DMTH43M8LFVWQ-13 uniquely balances ultra-low RDS(ON), automotive qualification, wettable flank AOI compatibility, and 2.3°C/W thermal resistance-making it optimal for high-volume, safety-critical 40V power stages where manufacturability and thermal headroom are jointly constrained.

Availability

DMTH43M8LFVWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit power management requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH43M8LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and ISO 14001 certifications.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101 compliance, high-temperature operation, and PPAP-ready manufacturing to meet Tier-1 automotive system requirements.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH43M8LFVWQ-13 supports 68A continuous drain current at TC = +100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI3333-8 package's 2.3°C/W RθJC and junction-to-case conduction path under sustained high-temperature operation.

Does this MOSFET require a gate resistor for automotive 12V applications?

A gate resistor is recommended to dampen ringing and control dV/dt during switching. With a typical gate resistance of 2.4Ω and Qg = 36.9nC, a 10Ω series resistor limits peak gate current to ~1A and extends turn-on time to ~370ns-sufficient for 300kHz DC-DC operation while suppressing EMI in sensitive automotive domains.

How does the wettable flank feature impact PCB assembly yield?

The wettable flank design exposes solderable metal on all four side walls of the PowerDI3333-8 package, enabling automated optical inspection (AOI) to verify fillet formation and solder joint completeness-reducing escape defects in automotive SMT lines and improving first-pass yield by ≥15% compared to standard DFN packages without side-wall plating.

Is the body diode suitable for synchronous rectification in buck converters?

Yes-the body diode exhibits 36ns reverse recovery time (tRR) and 36nC QRR at 15A/100A/μs, enabling efficient synchronous rectification in 200–500kHz buck converters. Its VSD = 0.8V (typ) at 20A ensures low forward conduction loss during dead-time conduction, reducing overall converter losses by up to 0.8% at full load.

DMTH43M8LFVWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2737 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 65W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMTH43M8LFVWQ-13 FAQ

1.How can I place an order for DMTH43M8LFVWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M8LFVWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M8LFVWQ-13 reliable?

The price and inventory of DMTH43M8LFVWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LFVWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH43M8LFVWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LFVWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M8LFVWQ-13?

DMTH43M8LFVWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M8LFVWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M8LFVWQ-13?

For technical support, including DMTH43M8LFVWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LFVWQ-13 requirements.

6.How does Aetrix verify that DMTH43M8LFVWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH43M8LFVWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LFVWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH43M8LFVWQ-13?

All DMTH43M8LFVWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LFVWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M8LFVWQ-13 part is unused and in its original packaging.

Return procedure for DMTH43M8LFVWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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