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Diodes Incorporated DMTH43M8LK3-13
- Part No.:
- DMTH43M8LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMTH43M8LK3-13.pdf
- Description:
- MOSFET N-CHANNEL 40V 100A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:1,096
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Product details
Overview
DMTH43M8LK3-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 3.6mΩ RDS(ON) at VGS = 10V, 175°C maximum junction temperature, and AEC-Q101 qualification. It serves as a high-current power switch in DC-DC converters and automotive lighting systems where thermal robustness and low conduction loss are critical.
For engineers reviewing the DMTH43M8LK3-13 datasheet, DMTH43M8LK3-13 pinout, DMTH43M8LK3-13 application, or DMTH43M8LK3-13 equivalent, key selection criteria include RDS(ON) @ 5V/10V, unclamped inductive switching rating, thermal resistance (RθJC = 1.7°C/W), and TO252 package compatibility with high-power PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while maintaining fast switching via minimized QGD × RDS(ON) figure-of-merit (FOM). Its 100% UIS-rated avalanche capability supports reliable operation under inductive load transients without external snubbers.
The device operates across –55°C to +175°C junction range and delivers 88W continuous power dissipation at TC = +25°C. Gate threshold voltage (1–2.5V) ensures stable turn-on with standard 5V logic drivers, and body diode reverse recovery charge (QRR = 32.9nC) is characterized for synchronous rectification use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum drain-source blocking voltage for 12V/24V automotive and industrial bus applications. |
| RDS(ON) @ VGS = 10V | 3.6mΩ max - Enables ≤3.6W conduction loss at 100A, critical for high-efficiency power stages. |
| RDS(ON) @ VGS = 5V | 5.2mΩ max - Supports direct drive from 5V microcontrollers without gate boosting. |
| ID (TC = 25°C) | 100A - Continuous drain current rating defined at case temperature, not ambient, enabling accurate heatsink sizing. |
| RθJC | 1.7°C/W - Low junction-to-case thermal resistance allows efficient heat transfer to PCB copper or heatsink. |
| QG @ 10V | 38.5nC - Total gate charge determines driver strength requirement and switching loss trade-off. |
| EAS | 87mJ - Avalanche energy rating validates ruggedness under inductive switching stress without failure. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, matte tin–annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or return path; electrically tied to substrate in DPAK layout. |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate requiring <2.54Ω series resistance to damp ringing during fast switching. |
| Pin 3 (Drain) | Power output / high-side connection | Exposed copper pad on underside - primary thermal path and high-current drain connection point. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) Rated | Validated to 13.2A/87mJ avalanche energy - eliminates need for external clamping circuits in motor or solenoid drives. |
| +175°C Maximum Junction Temperature | Enables operation in engine bay, under-hood, or sealed industrial enclosures without derating at elevated ambient. |
| Low QGD × RDS(ON) Figure of Merit | 6.9nC × 3.6mΩ = 24.8 mΩ·nC - balances switching speed and conduction loss for high-frequency DC-DC topologies. |
| AEC-Q101 Qualified | Stress-tested per automotive reliability standards - suitable for non-safety-critical vehicle subsystems (e.g., lighting, HVAC). |
| Halogen- and Antimony-Free "Green" Construction | <900ppm Br, <900ppm Cl, <1000ppm Sb - meets global environmental compliance requirements without performance compromise. |
Applications
| Automotive LED Headlamp Driver | Industrial 48V DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-brightness LED array switched at 200kHz in automotive headlamps with ambient up to 125°C. IC Role / Device Role / Timing Role: Primary high-side power switch controlling LED current in constant-current buck topology. Use Value: 3.6mΩ RDS(ON) limits conduction loss to <0.36W at 10A, while 175°C rating avoids thermal shutdown during sustained high-beam operation. |
Use Scenario: 48V-to-12V step-down converter delivering 60A to industrial control modules in factory automation cabinets. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side synchronous buck stage. Use Value: 5.2mΩ RDS(ON) @ 5V enables direct drive from controller IC, reducing BOM count and improving light-load efficiency over Schottky solutions. |
| Server VRM High-Current Phase Leg | Telecom Hot-Swap OR-ing Circuit |
|
Use Scenario: Multiphase CPU voltage regulator supplying >150A at ≤1V with strict thermal constraints on dense server motherboards. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) power MOSFET in high-side switching position of each phase leg. Use Value: RθJC = 1.7°C/W allows direct thermal coupling to VRM heatsink, sustaining 100A operation without exceeding 105°C junction limit. |
Use Scenario: Redundant 48V power feed in telecom equipment using ideal diode OR-ing to prevent backfeed and enable hot insertion. IC Role / Device Role / Timing Role: Low-VSD (1.2V) body diode used in reverse-polarity protection and controlled turn-on sequencing. Use Value: Body diode forward voltage ≤1.2V at 20A reduces conduction loss by 30% vs. discrete Schottky, lowering thermal load in confined chassis space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N4LHAG | RDS(ON) = 3.0mΩ @ 10V, but only rated to +150°C; no AEC-Q101 qualification; TO263 package. | Better RDS(ON) but unsuitable for under-hood automotive use due to lower temperature rating and missing automotive qualification. | Select when maximum efficiency at <150°C ambient is priority and automotive qualification is not required. |
| IPB110N12N3G | 120V VDSS, RDS(ON) = 4.5mΩ @ 10V, +175°C, AEC-Q101 qualified; TO263 package. | Higher voltage rating trades off conduction loss; larger package increases layout area and thermal mass. | Select when system requires 12V bus fault tolerance beyond 40V or when board space permits TO263 footprint. |
Compared with STL110N4LHAG and IPB110N12N3G, DMTH43M8LK3-13 uniquely combines 40V rating, 3.6mΩ RDS(ON), +175°C operation, AEC-Q101 qualification, and TO252 footprint-making it optimal for space-constrained, thermally aggressive 12V/24V automotive and industrial power switches.
Availability
DMTH43M8LK3-13 is available at Aetrix Electronics and suitable for automotive LED lighting, industrial 48V DC-DC conversion, and server VRM phase-leg designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMTH43M8LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with emphasis on power management, signal integrity, and protection solutions.
This MOSFET belongs to Diodes' high-reliability power transistor product line, engineered specifically for demanding automotive and industrial environments where thermal resilience, avalanche ruggedness, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH43M8LK3-13 supports 80A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations at elevated case temperatures and must be validated against actual PCB copper area and heatsinking in the target application.
Is the body diode suitable for synchronous rectification?
Yes-the body diode has characterized reverse recovery charge (QRR = 32.9nC) and time (tRR = 35.4ns) at IF = 15A and di/dt = 100A/μs, enabling use in synchronous buck converters where precise timing control of the high-side switch minimizes shoot-through risk.
Does the TO252 package require solder paste stencil adjustments for the exposed drain pad?
Yes-the exposed drain pad occupies ~80% of the bottom surface and requires a dedicated thermal pad stencil opening (typically 70–80% area ratio) with multiple vias to inner-layer copper planes. Diodes' recommended pad layout specifies 4.572mm × 1.060mm copper area with 0.508mm clearance and 0.25mm via pitch.
How does the 175°C rating impact PCB material selection?
The +175°C junction rating necessitates FR-4 PCBs with ≥Tg 170°C (e.g., IS410 or Megtron 6) and high-Tg solder mask to avoid delamination. Thermal vias beneath the drain pad must use filled or capped construction to maintain structural integrity and thermal conductivity at sustained high temperatures.
DMTH43M8LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2693 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMTH43M8LK3-13 FAQ
1.How can I place an order for DMTH43M8LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH43M8LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH43M8LK3-13 reliable?
The price and inventory of DMTH43M8LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LK3-13 is usually 5 days.
3.What payment methods are accepted for DMTH43M8LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH43M8LK3-13?
DMTH43M8LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH43M8LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH43M8LK3-13?
For technical support, including DMTH43M8LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LK3-13 requirements.
6.How does Aetrix verify that DMTH43M8LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMTH43M8LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LK3-13 meets industry standards.
7.What is the process for return or replacement of DMTH43M8LK3-13?
All DMTH43M8LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH43M8LK3-13 part is unused and in its original packaging.
Return procedure for DMTH43M8LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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