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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH43M8LK3Q-13

Name: DMTH43M8LK3Q-13
Brand: Diodes Incorporated
SKU: DMTH43M8LK3Q-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH43M8LK3Q-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH43M8LK3Q-13.pdf

Description:: MOSFET N-CHANNEL 40V 100A TO252

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Product details

Overview

DMTH43M8LK3Q-13 from Diodes Incorporated is an AEC-Q101 qualified 40V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous 100A drain current at TC = +25°C, 3.6mΩ RDS(ON) @ VGS = 10V, and operation up to +175°C junction temperature. It delivers robust unclamped inductive switching (13.2A/87mJ) and low gate charge (38.5nC @ 10V), targeting high-reliability automotive power management and DC-DC converter primary-side switching.

For engineers reviewing the DMTH43M8LK3Q-13 datasheet, DMTH43M8LK3Q-13 pinout, DMTH43M8LK3Q-13 application, or DMTH43M8LK3Q-13 equivalent, key selection criteria include its 175°C thermal rating, 100% UIS capability, low RDS(ON) × Qgd figure-of-merit, AEC-Q101 qualification with PPAP support, and TO252 thermal performance under high-current pulsed loads.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in automotive-grade power stages. Its 1.7°C/W RθJC enables efficient heat transfer to the PCB copper pad, while the 2.9mΩ typical RDS(ON) at VGS = 10V ensures minimal on-state loss at full rated current.

The device features tightly controlled VGS(TH) (1–2.5V), low Crss (52pF), and balanced Qgd/Qgs ratio (6.9nC each), supporting stable gate drive and reduced Miller-induced shoot-through risk in synchronous buck and half-bridge topologies operating up to 200kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage compatible with 12V/24V automotive battery rails and transient clamping requirements.
R_DS(ON) Max	3.6mΩ @ V_GS = 10V - Enables ≤3.6W conduction loss at 100A, critical for thermally constrained engine bay modules.
I_D Continuous	100A @ T_C = +25°C - Supports high-current DC-DC output stages without external heatsinking when mounted on ≥1"² 2oz copper.
Q_g	38.5nC @ V_GS = 10V - Determines gate driver current demand; enables <10ns turn-on delay with 1.6Ω source resistance.
T_J Max	+175°C - Certified operation in under-hood environments exceeding 125°C ambient, per AEC-Q101 stress testing.
E_AS	87mJ - Quantifies single-pulse avalanche energy handling, ensuring reliability during load dump or inductive flyback events.
R_θJC	1.7°C/W - Confirms direct thermal path from die to exposed drain pad, enabling >80W power dissipation with proper PCB copper area.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current in common-source configuration.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100nA leakage; driven by PWM controller with 3.3V/5V logic-compatible threshold.
Pin 3 (Drain)	Power output / High-side switch node	Exposed metal pad - electrically and thermally connected to drain; must be soldered to ≥1"² copper pour for thermal compliance.

Key Features

Feature	Design Value
AEC-Q101 qualification with PPAP support	Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero-defect screening.
100% Unclamped Inductive Switching (UIS)	Guaranteed 13.2A/87mJ avalanche capability eliminates need for external snubbers in boost/buck converters.
Low R_DS(ON) × Q_gd figure-of-merit	19.9 mΩ·nC - Optimizes trade-off between conduction loss and switching loss in high-frequency power stages.
+175°C maximum junction temperature	Enables operation in engine control units, transmission control modules, and ADAS ECUs where ambient exceeds 125°C.
Halogen- and antimony-free "Green" construction	Meets EU RoHS 3 (2015/863/EU) with Br+Cl <1500ppm and Sb <1000ppm; supports end-of-life recycling compliance.

Applications

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: High-current 12V-to-5V/3.3V conversion for microcontroller core supply in engine bay-mounted ECUs.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in buck converter topology, switching at 200kHz with 100A peak inrush.

Use Value: 3.6mΩ R_DS(ON) limits conduction loss to 36W at 100A, while 175°C rating ensures stability during 150°C under-hood transients.

Use Scenario: 48V-to-12V bidirectional power conversion in 48V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge configuration, handling 90A continuous current with 5V gate drive.

Use Value: 5.2mΩ R_DS(ON) @ V_GS = 5V enables efficient operation with standard 5V gate drivers, reducing system BOM cost vs. level-shifted solutions.

LED Headlamp Backlight Driver

Electric Power Steering (EPS) Motor Driver

Use Scenario: Constant-current LED string regulation for adaptive front-lighting systems (AFS) with dynamic beam shaping.

IC Role / Device Role / Timing Role: Low-side current-sense switch in PWM-controlled constant-current sink, cycling at 1–5kHz.

Use Value: 100% UIS rating prevents failure during rapid LED string short-circuit detection and recovery events.

Use Scenario: H-bridge half-bridge leg in 12V EPS motor control module subjected to vibration, thermal cycling, and load dump.

IC Role / Device Role / Timing Role: High-reliability power switch with integrated body diode conducting reverse recovery during PWM dead-time.

Use Value: 35.4ns t_RR and 32.9nC Q_RR minimize switching loss and EMI during commutation, improving torque response fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40V, 220A, 1.6mΩ @ 10V, TO263 package, R_θJC = 0.7°C/W	Higher current rating but larger footprint; requires more PCB area and heavier copper for thermal management.	Select when >150A peak current or lower R_θJC is required; verify board space and assembly compatibility with TO263.
IXTP100N04T4	40V, 100A, 3.8mΩ @ 10V, TO220 package, R_θJC = 0.5°C/W, non-AEC-Q101	Through-hole mounting; lacks automotive qualification and PPAP documentation; higher thermal resistance to heatsink.	Acceptable for industrial prototypes or non-automotive designs where AEC-Q101 is not mandated; avoid for production automotive programs.

Compared with STL220N4F7AG and IXTP100N04T4, DMTH43M8LK3Q-13 offers optimal balance of AEC-Q101 compliance, TO252 manufacturability, 3.6mΩ conduction loss, and 1.7°C/W thermal resistance-making it preferred for space-constrained, high-volume automotive modules requiring zero-defect reliability.

Availability

DMTH43M8LK3Q-13 is available at Aetrix Electronics and suitable for automotive power management, DC-DC converters, LED backlighting, and electric power steering systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH43M8LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets, with ISO/TS 16949 and IATF 16949 certified facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for under-hood and safety-critical applications demanding AEC-Q101 qualification, 175°C operation, and robust avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for DMTH43M8LK3Q-13?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Operation beyond this risks irreversible gate oxide breakdown. For reliable 10V drive, ensure gate driver overshoot remains below 20V using appropriate RC snubbing or clamping diodes.

Does DMTH43M8LK3Q-13 require a gate resistor for safe switching?

Yes-a gate resistor is mandatory to control dV/dt and prevent oscillation. With 38.5nC total gate charge and typical gate resistance of 2.54Ω, a 10–22Ω series resistor is recommended to limit peak gate current and damp ringing, especially in high-di/dt automotive environments.

Can DMTH43M8LK3Q-13 be used in parallel configurations?

Parallel operation is feasible due to positive R_DS(ON) temperature coefficient, which promotes current sharing. However, layout symmetry, matched gate drive paths, and individual source inductance minimization are essential-verified via thermal imaging and current probe measurements during validation.

Is the TO252 package lead (Pb)-free and RoHS-compliant?

Yes-the device uses matte tin annealed over copper leadframe and complies with EU RoHS 2015/863/EU (RoHS 3). Lead content is below detection limits, and halogen/antimony levels meet Diodes' "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb).

DMTH43M8LK3Q-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2693 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 88W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMTH43M8LK3Q-13 FAQ

1.How can I place an order for DMTH43M8LK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M8LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M8LK3Q-13 reliable?

The price and inventory of DMTH43M8LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMTH43M8LK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M8LK3Q-13?

DMTH43M8LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M8LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M8LK3Q-13?

For technical support, including DMTH43M8LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LK3Q-13 requirements.

6.How does Aetrix verify that DMTH43M8LK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMTH43M8LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMTH43M8LK3Q-13?

All DMTH43M8LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M8LK3Q-13 part is unused and in its original packaging.

Return procedure for DMTH43M8LK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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