Diodes Incorporated DMTH43M8LPSQ-13

Overview

DMTH43M8LPSQ-13 from Diodes Incorporated is a 40V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, AEC-Q101 qualified for automotive use, with R_DS(ON) = 3.3 mΩ @ V_GS = 10V and rated for +175°C junction operation. It serves as a high-current load switch or synchronous rectifier in BLDC motor drives and DC-DC converters.

For engineers reviewing the DMTH43M8LPSQ-13 datasheet, DMTH43M8LPSQ-13 pinout, DMTH43M8LPSQ-13 application, or DMTH43M8LPSQ-13 equivalent, key selection criteria include its 100% unclamped inductive switching rating, low gate charge (Q_G = 49 nC), thermal resistance R_θJC = 1.8°C/W, and AEC-Q101 qualification status.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(ON) and fast switching in high-temperature automotive environments. Its 100% UIS-rated ruggedness ensures reliable operation under inductive load transients common in motor control and power conversion.

The device features low input capacitance (C_ISS = 3367 pF) and fast turn-on/turn-off times (t_D(ON) = 10 ns, t_D(OFF) = 46 ns), enabling efficient high-frequency switching up to 500 kHz in synchronous buck topologies while maintaining low conduction and switching losses.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced surface-mount package with exposed drain pad for low R_θJC, UL 94V-0 molded plastic, matte tin annealed terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40V automotive MOSFET applications.

Compared with STL220N4F7AG and IPB180N04S4-02, DMTH43M8LPSQ-13 offers optimal balance of low R_DS(ON), compact PowerDI5060-8 footprint, and proven 100% UIS performance-making it ideal for space-constrained, high-reliability automotive power stages operating above 100 kHz.

Availability

DMTH43M8LPSQ-13 is available at Aetrix Electronics and suitable for BLDC motor control, automotive DC-DC conversion, and high-temperature load switching requiring stable component supply across extended product lifecycles.

Supply support for DMTH43M8LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This part belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for demanding automotive power conversion and motor control applications where thermal robustness, avalanche capability, and long-term reliability are critical.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH43M8LPSQ-13 supports 82 A continuous drain current at case temperature +100°C, per datasheet Note 6. This rating reflects thermal derating based on R_θJC = 1.8°C/W and maximum junction temperature of +175°C. Operation at this current requires adequate PCB copper area and thermal vias to maintain case temperature below 100°C.

Is the device suitable for high-side switching configurations?

Yes-the DMTH43M8LPSQ-13 supports high-side switching when paired with an appropriate floating gate driver (e.g., ISO5852S or similar). Its ±20 V gate-source rating, low Q_GD, and robust body diode (I_S = 69 A) enable reliable commutation in half-bridge and three-phase inverter topologies without external bootstrap diodes or complex level-shifting circuitry.

Does the PowerDI5060-8 package require special PCB layout considerations?

Yes-optimal thermal performance requires a minimum 25 mm² exposed copper pad connected to ≥6 thermal vias (0.3 mm diameter, spaced ≤1.5 mm apart) to inner ground/power planes. The datasheet recommends specific pad dimensions (X1 = 4.10 mm, Y5 = 3.81 mm) and solder mask opening to maximize thermal transfer from the exposed drain pad to the PCB.

How does the device perform under repetitive avalanche conditions?

The DMTH43M8LPSQ-13 is rated for single-pulse avalanche energy E_AS = 87 mJ (L = 1 mH), but is not characterized for repetitive avalanche. For applications involving frequent inductive turn-off (e.g., motor phase commutation), design must ensure that each event remains within the SOA curve (Figure 12) and that average power dissipation stays within thermal limits using the transient thermal impedance curve (Figure 13).