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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH43M8LPSWQ-13

Name: DMTH43M8LPSWQ-13
Brand: Diodes Incorporated
SKU: DMTH43M8LPSWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH43M8LPSWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH43M8LPSWQ-13.pdf

Description:: MOSFET BVDSS: 31V~40V POWERDI506

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Product details

Overview

DMTH43M8LPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for +175°C operation, with R_DS(ON) = 3.3 mΩ @ V_GS = 10V, I_D = 100A (T_C = +25°C), and 100% unclamped inductive switching capability-designed for high-reliability automotive BLDC motor drives and DC-DC converters.

For engineers reviewing the DMTH43M8LPSWQ-13 datasheet, DMTH43M8LPSWQ-13 pinout, DMTH43M8LPSWQ-13 application, or DMTH43M8LPSWQ-13 equivalent, key selection criteria include its low on-resistance at high temperature, robust avalanche energy rating (E_AS = 87 mJ), and PPAP-capable automotive qualification under IATF 16949 manufacturing.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-current automotive power stages. Its gate threshold voltage (V_GS(TH) = 1–2.5 V) enables reliable turn-on with standard 5V or 10V gate drivers, while its low C_iss (2693–3367 pF) and Q_g (38.5–49 nC @ 10V) support efficient high-frequency PWM control in 48V systems.

The device integrates a robust body diode with t_RR = 35.4–70 ns and Q_RR = 32.9 nC, enabling synchronous rectification in buck converters and freewheeling in motor phases. Thermal design is enabled by R_θJC = 1.8 °C/W and an exposed drain pad compatible with high-thermal-conductivity PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12V/48V automotive bus protection and motor phase switching.
R_DS(ON)	3.3 mΩ @ V_GS = 10V, T_C = +25°C - Enables <1.3 W conduction loss at 20A, critical for thermal management in compact modules.
I_D (continuous)	100 A @ T_C = +25°C - Supports high-current motor phase legs and primary-side switches in high-power DC-DC converters.
E_AS	87 mJ - Confirmed avalanche energy rating ensures robustness against inductive kickback in BLDC commutation without external snubbers.
T_J max	+175°C - Rated for under-hood environments including engine control units and transmission control modules.
Q_g	49 nC max @ V_GS = 10V - Determines gate driver current requirement (~1.5 A peak for 33 ns rise time), influencing driver IC selection.
C_iss	3367 pF max - Impacts high-frequency switching losses and EMI behavior in >100 kHz converter topologies.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin–annealed copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All eight pins are internally connected to the exposed drain pad-provides low-inductance, high-current path and primary thermal conduction path to PCB.
Source (S)	Source terminal (pins 1–4 bottom view)	Four dedicated source terminals reduce source inductance and improve current sharing in paralleled configurations.
Gate (G)	Control input (pin 5 bottom view)	Single gate terminal with low R_G (2.54–5.1 Ω) minimizes gate ringing and supports clean edge control.

Key Features

Feature	Design Value
+175°C junction rating	Enables direct placement in high-ambient zones (e.g., near engines or inverters) without derating or forced cooling.
100% unclamped inductive switching (UIS)	Validated avalanche performance eliminates need for external clamping circuits in motor drive half-bridges.
Low R_DS(ON) at elevated temperature	R_DS(ON) = 4.7 mΩ @ T_J = +175°C ensures predictable conduction loss across full automotive temperature range.
Low Q_gd/Q_gs ratio	Q_gd = 6.9–11 nC, Q_gs = 6.9–11 nC - Reduces Miller effect, improving noise immunity and hard-switching stability.
AEC-Q101 qualified + PPAP capable	Manufactured in IATF 16949-certified facilities with full change control-meets OEM requirements for serial production traceability.

Applications

Automotive BLDC Motor Drive

48V Automotive DC-DC Converter

Use Scenario: High-efficiency 3-phase inverter for electric power steering (EPS) or HVAC blower motors.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in each half-bridge leg, operating at 20–50 kHz PWM frequency.

Use Value: 3.3 mΩ R_DS(ON) reduces conduction loss by >30% vs. legacy 5 mΩ MOSFETs, extending battery range and lowering heatsink mass.

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V bidirectional buck-boost converter for vehicle electrification.

IC Role / Device Role / Timing Role: High-current switch handling up to 100A continuous drain current with fast t_F = 11–22 ns fall time.

Use Value: Low C_oss (850–1105 pF) and fast switching minimize dead-time losses and improve light-load efficiency above 94%.

Automotive Load Switch

On-Board Charger (OBC) Input Stage

Use Scenario: Smart high-side load switch for battery disconnect and fault-isolation in ADAS domain controllers.

IC Role / Device Role / Timing Role: Single-pole, high-current switch with integrated overtemperature and short-circuit protection coordination.

Use Value: +175°C rating allows integration into compact, sealed ECUs without airflow-reducing system footprint by 40% vs. discrete solutions.

Use Scenario: AC/DC front-end switching stage in 11 kW OBC for PHEV/EV charging systems.

IC Role / Device Role / Timing Role: Bridge-leg switch in totem-pole PFC topology, requiring low Q_g and high dV/dt immunity.

Use Value: 49 nC total gate charge enables use of cost-effective 2-A gate drivers while maintaining <10 ns propagation delay margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 2.2 mΩ @ 10V but rated only to +150°C; no AEC-Q101 documentation publicly available.	Lacks PPAP support and full automotive qualification-suitable for industrial-grade 48V systems but not Tier-1 automotive programs.	Select when thermal margin permits lower T_J max and qualification documentation is not required.
IXFH40N40P3	Higher V_DSS = 400V, R_DS(ON) = 45 mΩ-designed for 400V EV traction inverters, not 48V auxiliary systems.	Over-specified voltage rating increases gate charge (Q_g = 120 nC) and cost; unsuitable for space-constrained 48V modules.	Avoid for 48V applications due to excessive conduction loss and incompatible thermal profile.

Compared with STL220N4F7AG and IXFH40N40P3, DMTH43M8LPSWQ-13 uniquely balances ultra-low R_DS(ON), full AEC-Q101 compliance, and +175°C operation-making it the only qualified option for high-current, high-temperature automotive power stages where both reliability and efficiency are non-negotiable.

Availability

DMTH43M8LPSWQ-13 is available at Aetrix Electronics and suitable for automotive BLDC motor drives, 48V DC-DC converters, and high-temperature load switches requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH43M8LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and automotive-qualified components.

This MOSFET belongs to Diodes' PowerDI® automotive MOSFET product line, engineered specifically for high-current, high-temperature switching in electric vehicle subsystems-including EPS, OBC, and 48V mild-hybrid architectures.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH43M8LPSWQ-13 supports 82 A continuous drain current at case temperature +100°C, verified per datasheet Note 7. This rating reflects derating from the 100 A value at +25°C due to thermal resistance (R_θJC = 1.8 °C/W) and must be applied with appropriate PCB copper area and thermal vias to maintain safe junction temperature.

Is the PowerDI5060-8/SWP package lead-free and RoHS compliant?

Yes-the device features matte tin–annealed copper leadframe and green molding compound, meeting EU RoHS 2015/863/EU (RoHS 3) with all applicable exemptions applied. It is also halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), certified "Green" per Diodes Incorporated's definition.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No-its gate threshold voltage (V_GS(TH) = 1–2.5 V) and ±20 V gate-source rating allow robust turn-off with 0 V gate drive. The low Crss (52–104 pF) and balanced Q_gd/Q_gs further suppress Miller-induced false turn-on, eliminating need for active gate pull-down in typical automotive switching waveforms.

Can DMTH43M8LPSWQ-13 be used in parallel configurations?

Yes-its flat R_DS(ON) vs. temperature curve (normalized drift <1.2× from −55°C to +175°C) and four dedicated source terminals enable stable current sharing. Parallel operation requires matched gate drive layout, identical PCB thermal paths, and individual gate resistors (≥2.2 Ω) to damp oscillation.

DMTH43M8LPSWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3367 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.7W (Ta), 83.3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH43M8LPSWQ-13 FAQ

1.How can I place an order for DMTH43M8LPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH43M8LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH43M8LPSWQ-13 reliable?

The price and inventory of DMTH43M8LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH43M8LPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH43M8LPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH43M8LPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH43M8LPSWQ-13?

DMTH43M8LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH43M8LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH43M8LPSWQ-13?

For technical support, including DMTH43M8LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH43M8LPSWQ-13 requirements.

6.How does Aetrix verify that DMTH43M8LPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH43M8LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH43M8LPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH43M8LPSWQ-13?

All DMTH43M8LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH43M8LPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH43M8LPSWQ-13 part is unused and in its original packaging.

Return procedure for DMTH43M8LPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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