Diodes Incorporated DMTH45M5LFVW-13

Overview

DMTH45M5LFVW-13 from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 71A continuous drain current at TC = +25°C, with R_DS(ON) of 5.5 mΩ @ V_GS = 10V and 7.9 mΩ @ V_GS = 4.5V, operating up to +175°C - deployed in high-efficiency DC-DC converters and automotive-grade backlighting power stages.

For engineers reviewing the DMTH45M5LFVW-13 datasheet, DMTH45M5LFVW-13 pinout, DMTH45M5LFVW-13 application, or DMTH45M5LFVW-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and low Q_gd × R_DS(ON) figure-of-merit for fast-switching efficiency-critical designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining controlled gate charge (Q_g = 13.9 nC @ V_GS = 10V) and fast switching (t_r = 3.1 ns, t_f = 5.5 ns). Its body diode exhibits t_RR = 59 ns and Q_RR = 50 nC under IF = 25A, di/dt = 100 A/μs conditions.

The device is characterized across -55°C to +175°C junction temperature range, with normalized R_DS(ON) variation ≤2.2× at T_J = 175°C (V_GS = 10V), and gate threshold voltage (V_GS(TH) = 1.2–2.3 V) stable over temperature per Figure 8.

Key Specifications

Pinout & Package

Package: PowerDI^® 3333-8/SWP (Type UX), surface-mount, wettable flank, exposed drain pad for thermal and electrical connection. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), with 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH45M5LFVWQ-13, the base part lacks automotive documentation but offers identical performance and cost advantage; versus IPB180N04S4-02, it trades 1.5 mΩ higher R_DS(ON) for 40% smaller footprint and AOI support - critical for high-mix, high-volume manufacturing.

Availability

DMTH45M5LFVW-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, industrial DC-DC converters, and server VRM power stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.

Supply support for DMTH45M5LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

This MOSFET belongs to Diodes' PowerDI^® 3333-8 high-current logic-level portfolio, engineered specifically for compact, high-efficiency switching applications where thermal density, AOI compatibility, and automotive-grade robustness intersect.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH45M5LFVW-13 supports 50 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package's 2.9 °C/W junction-to-case resistance and internal silicon thermal design.

Does this MOSFET require a gate resistor for stable operation?

A gate resistor is recommended to control dV/dt and suppress oscillation during switching. With R_g = 1.5 Ω typical and Q_g = 13.9 nC, a 10 Ω external resistor yields ~140 ns turn-on delay - sufficient for most 500 kHz–1 MHz applications while limiting peak gate current to <1.5 A.

Is the body diode suitable for synchronous rectification?

Yes - the body diode has t_RR = 59 ns and Q_RR = 50 nC at IF = 25A, di/dt = 100 A/μs, enabling use in synchronous rectification where reverse recovery behavior is managed by complementary gate timing. However, dedicated Schottky or GaN alternatives may offer lower loss in ultra-high-frequency designs.

Can this part be used in a high-humidity environment without conformal coating?

The PowerDI3333-8/SWP package uses UL 94V-0 mold compound and matte tin-plated copper leadframe, providing inherent moisture resistance per J-STD-020 Level 1. No conformal coating is required for standard industrial humidity exposure (≤85% RH), though condensation-prone environments (e.g., outdoor enclosures) still warrant protective coating per IPC-CC-830B.