Diodes Incorporated DMTH45M5LFVW-7

Overview

DMTH45M5LFVW-7 from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for continuous drain current of 71A at TC = +25°C, with R_DS(ON) = 5.5 mΩ @ V_GS = 10V and 7.9 mΩ @ V_GS = 4.5V, operating up to +175°C - deployed in high-efficiency DC-DC converters and automotive-grade power management circuits.

For engineers reviewing the DMTH45M5LFVW-7 datasheet, DMTH45M5LFVW-7 pinout, DMTH45M5LFVW-7 application, or DMTH45M5LFVW-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Q_gd × R_DS(ON) figure-of-merit, and thermal performance validated to TJ = +175°C under sustained load.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while preserving fast switching behavior. Its gate threshold voltage (1.2–2.3 V) enables compatibility with 3.3 V and 5 V logic-level drive, and its body diode exhibits t_RR = 59 ns and Q_RR = 50 nC under IF = 25 A, di/dt = 100 A/μs conditions.

The device features a thermally enhanced PowerDI3333-8/SWP (Type UX) package with exposed drain pad, delivering R_θJC = 2.9 °C/W and R_θJA = 42 °C/W on FR-4 board - enabling high-current operation without external heatsink in space-constrained industrial and automotive modules.

Key Specifications

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder-joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with DMTH45M5LFVW-7, the DMTH45M5LQ-7 adds automotive qualification overhead without electrical benefit, while IPB40N04S4-02 trades superior R_DS(ON) for significantly larger footprint, higher gate drive burden, and no AOI support - making DMTH45M5LFVW-7 optimal for space- and cost-sensitive 500 kHz+ industrial power stages.

Availability

DMTH45M5LFVW-7 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and medical imaging power supplies requiring stable component supply across multi-year production cycles.

Supply support for DMTH45M5LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for thermally demanding, high-efficiency switching applications where small footprint, low R_DS(ON), and +175°C operation are essential.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH45M5LFVW-7 supports 50 A continuous drain current at case temperature +100°C, verified per datasheet Note 5 using thermal resistance to solder point (R_θJC = 2.9 °C/W). This rating assumes proper PCB copper pour and thermal via design beneath the exposed drain pad.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and limit peak gate current, especially in high-speed switching. With Q_g = 13.9 nC and typical driver output impedance, a 3.5 Ω resistor (as used in datasheet timing tests) provides optimal trade-off between switching speed and EMI control in 500 kHz buck converters.

Is the body diode suitable for synchronous rectification?

Yes - the body diode has t_RR = 59 ns and Q_RR = 50 nC at IF = 25 A, di/dt = 100 A/μs, enabling reliable synchronous operation in buck and half-bridge topologies up to 1 MHz. Its forward voltage (V_SD = 0.84 V typ. at 25 A) is lower than standard Schottky diodes in same current range.

Can this part be used in place of a P-channel high-side switch?

No - DMTH45M5LFVW-7 is an N-channel device requiring gate drive above source potential. It cannot replace a P-channel high-side switch without adding a charge pump or floating driver. For true high-side N-channel use, it must be paired with a bootstrap or isolated gate driver circuit.