Diodes Incorporated DMTH45M5LFVWQ-13

Overview

DMTH45M5LFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8/SWP package, delivering 5.5 mΩ R_DS(ON) @ V_GS = 10 V, 71 A continuous drain current at T_C = +25°C, and rated for operation up to +175°C junction temperature. It serves as a high-reliability power switch in automotive DC-DC converters and backlighting drivers.

For engineers reviewing the DMTH45M5LFVWQ-13 datasheet, DMTH45M5LFVWQ-13 pinout, DMTH45M5LFVWQ-13 application, or DMTH45M5LFVWQ-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Q_gd × R_DS(ON) figure-of-merit, and IATF 16949-certified manufacturing traceability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (1.2–2.3 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drive, while the 30 pF reverse transfer capacitance (C_rss) supports efficient hard-switching in synchronous buck topologies.

The device integrates a robust body diode with 59 ns reverse recovery time and 50 nC Q_RR, enabling stable freewheeling in inductive loads. Thermal design is supported by a 2.9 °C/W R_θJC and validated SOA curves covering pulse widths from 1 µs to DC under T_J ≤ 175°C conditions.

Key Specifications

Pinout & Package

PowerDI3333-8/SWP is a surface-mount, 8-terminal leadless package with an exposed drain pad for enhanced thermal performance and wettable flanks for solder-joint inspection. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), with 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IPB180N04S4-02, DMTH45M5LFVWQ-13 uniquely combines wettable flank AOI compatibility, full AEC-Q101/PPAP documentation, and production-tested UIS - making it the preferred choice for Tier 1 automotive electronics requiring zero-defect assembly and long-term field reliability.

Availability

DMTH45M5LFVWQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, and ECU power management requiring stable component supply across extended product lifecycles.

Supply support for DMTH45M5LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMTH45M5LFVWQ belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for under-hood and safety-critical automotive power switching where thermal resilience, transient robustness, and process traceability are mandatory.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance of DMTH45M5LFVWQ-13?

The datasheet specifies that thermal resistance drops to 2.9 °C/W when mounted on a 1-inch square 2 oz copper plate. For best results, use ≥250 mm² of 2 oz copper connected directly to the exposed drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated). Larger copper areas yield diminishing returns beyond 400 mm².

Does DMTH45M5LFVWQ-13 support 3.3 V logic-level gate drive?

Yes - its V_GS(TH) range (1.2–2.3 V) ensures turn-on with 3.3 V drive, but R_DS(ON) increases to 7.9 mΩ at V_GS = 4.5 V. For minimal conduction loss, use 10 V drive; for logic-level compatibility, verify system efficiency at 71 A using the 4.5 V R_DS(ON) curve in Figure 3.

How is the "wettable flank" feature implemented in PowerDI3333-8/SWP?

The side walls of Pins 1–4 are electroplated with matte tin annealed over copper, matching the solderability and reflectivity of standard leaded terminations. This allows automated optical inspection systems to detect solder meniscus height and wetting angle without X-ray, meeting IPC-A-610 Class 3 requirements for automotive assemblies.

Is DMTH45M5LFVWQ-13 suitable for reverse polarity protection circuits?

No - it is an N-channel MOSFET intended for high-side or low-side switching with gate referenced to source. For reverse polarity protection, a P-channel device (e.g., DMTH10H023LPSQ) or ideal diode controller is required. Using this part in reverse-battery configurations risks gate oxide damage due to uncontrolled V_GS exceeding ±20 V.