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Diodes Incorporated DMTH45M5LFVWQ-7
- Part No.:
- DMTH45M5LFVWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH45M5LFVWQ-7.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:9,609
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Product details
Overview
DMTH45M5LFVWQ-7 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for +175°C operation, with RDS(ON) = 5.5 mΩ @ VGS = 10V and 7.9 mΩ @ VGS = 4.5V, delivering 71A continuous drain current at TC = +25°C. It serves as a high-reliability power switch in automotive DC-DC converters and backlighting circuits.
For engineers reviewing the DMTH45M5LFVWQ-7 datasheet, DMTH45M5LFVWQ-7 pinout, DMTH45M5LFVWQ-7 application, or DMTH45M5LFVWQ-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and low Qgd × RDS(ON) figure-of-merit for efficient switching in thermally constrained automotive environments.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in 12V/24V automotive systems. Its gate threshold voltage (1.2–2.3V) enables compatibility with 3.3V and 5V logic-level drivers, while the body diode exhibits tRR = 59 ns and QRR = 50 nC under IF = 25A, di/dt = 100 A/μs conditions.
The device features a thermally enhanced PowerDI3333-8/SWP (Type UX) package with exposed drain pad, achieving RθJC = 2.9°C/W and supporting 51W power dissipation at TC = +25°C. Its normalized RDS(ON) variation remains ≤2.2× across –55°C to +175°C junction temperature range at VGS = 10V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 36V automotive battery transients. |
| RDS(ON) @ 10V | 5.5 mΩ - Enables <1.4 W conduction loss at 71A, reducing thermal stress in compact layouts. |
| RDS(ON) @ 4.5V | 7.9 mΩ - Ensures usable on-resistance with standard 5V gate drivers in cost-sensitive modules. |
| Qg @ 10V | 13.9 nC - Low gate charge supports efficient 500 kHz+ switching in synchronous buck regulators. |
| trr / Qrr | 59 ns / 50 nC - Minimizes reverse recovery loss and EMI in hard-switched topologies. |
| TJ Range | –55°C to +175°C - Certified for under-hood applications including engine control and ADAS power stages. |
Pinout & Package
Package: PowerDI3333-8/SWP (Type UX), surface-mount, wettable flank, exposed drain pad for thermal and solder-joint reliability. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain (common source connection) | All pins 1–8 are internally connected to the exposed drain pad - provides low-inductance, high-current path and primary thermal conduction path to PCB copper. |
| G (Gate) | Control input | Pin 1 (top view marking side) - isolated gate terminal requiring <±20V drive; low Ciss = 978 pF reduces driver loading. |
| S (Source) | Reference node | Pins 2 & 3 (top view) - dual-source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables direct placement near heat sources (e.g., inverters, motor drivers) without derating penalties in engine bay designs. |
| Wettable flank leads | Supports automated optical inspection (AOI) of solder fillets on all four sides, improving manufacturing yield in automotive SMT lines. |
| 100% production UIS testing | Guarantees avalanche ruggedness up to IAS = 19.6 A and EAS = 19.2 mJ - eliminates field failures from inductive load switching events. |
| Low Qgd × RDS(ON) FOM | Qgd = 0.9 nC × RDS(ON) = 5.5 mΩ = 4.95 mΩ·nC - minimizes Miller-induced switching delay and shoot-through risk in half-bridge configurations. |
Applications
| Automotive DC-DC Converters | LED Backlight Drivers |
|---|---|
Use Scenario: High-efficiency 12V-to-5V/3.3V buck converter supplying infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 300–600 kHz. Use Value: 5.5 mΩ RDS(ON) limits conduction loss to <1.1 W at 45A, enabling >95% efficiency without forced air cooling. |
Use Scenario: Constant-current LED string driver for instrument cluster and center display backlighting. IC Role / Device Role / Timing Role: PWM-controlled high-side current sink switch modulating 2–5A per channel. Use Value: 7.9 mΩ RDS(ON) at 4.5V gate drive ensures <0.2 W loss per channel, minimizing thermal drift in brightness control. |
| Engine Control Unit Power Stages | Body Control Module Load Switches |
Use Scenario: 12V supply switching for fuel injector drivers and ignition coil pre-drivers. IC Role / Device Role / Timing Role: Robust high-side load switch handling repetitive 100A+ pulsed currents during cranking. Use Value: 284A pulsed drain rating and 100% UIS qualification prevent failure during cold-start battery sag and inductive kickback. |
Use Scenario: Smart high-side power distribution for door locks, window motors, and HVAC actuators. IC Role / Device Role / Timing Role: Protected load switch with integrated diagnostics and overtemperature shutdown. Use Value: –55°C to +175°C operation ensures reliable startup in extreme ambient conditions, supported by IATF 16949 manufacturing traceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(ON) = 3.7 mΩ @ 10V but larger PowerFLAT 5x6 package; no wettable flank; Qg = 22.5 nC. | Better conduction loss but higher gate drive energy and less AOI-friendly; requires larger PCB footprint. | Select when ultra-low RDS(ON) dominates over board space and optical inspection requirements. |
| ON-SEMI NTMFS5C428NT1G | RDS(ON) = 4.2 mΩ @ 10V in SO-8FL; no AEC-Q101 PPAP support; RθJC = 3.5°C/W. | Lacks full automotive qualification documentation and has higher thermal resistance - unsuitable for PPAP-critical programs. | Acceptable only for non-safety-critical consumer-grade derivatives where AEC-Q101 compliance is not mandated. |
Compared with STL220N4F7AG and NTMFS5C428NT1G, DMTH45M5LFVWQ-7 uniquely balances low RDS(ON), wettable flank AOI capability, full PPAP support, and industry-leading thermal resistance (2.9°C/W) in a compact 3.3 mm² footprint - making it optimal for space-constrained, high-volume automotive power modules requiring zero-defect manufacturing validation.
Availability
DMTH45M5LFVWQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit power stages requiring stable component supply, full AEC-Q101 traceability, and IATF 16949-certified sourcing.
Supply support for DMTH45M5LFVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-temperature switching in 12V/24V vehicle electrical systems - emphasizing thermal robustness, production-tested ruggedness, and manufacturability in Tier-1 assembly lines.
FAQ
What is the maximum allowable gate-source voltage for DMTH45M5LFVWQ-7?
The absolute maximum VGS rating is ±20 V, per the datasheet's "Maximum Ratings" table. Operation beyond this risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to –12 V to +15 V, with transient spikes clamped using Zener diodes or gate driver ICs with built-in protection.
Does DMTH45M5LFVWQ-7 require a heatsink in typical automotive applications?
No external heatsink is required when mounted on a 2 oz copper PCB with ≥1 inch² thermal pad connected to the exposed drain. At TC = +100°C, it delivers 50 A continuously (PD = 51 W at TC = +25°C, derated to ~25 W at TC = +100°C), sufficient for most under-dash modules without forced airflow.
How does the wettable flank feature improve manufacturing yield?
The chamfered, solderable sidewalls on all four edges enable automated optical inspection (AOI) to verify solder fillet height and wetting quality - critical for detecting head-in-pillow or insufficient solder defects in automotive SMT lines. This eliminates reliance on X-ray for process validation and reduces rework rates in high-volume PPAP production.
Is DMTH45M5LFVWQ-7 qualified for use in safety-critical ADAS applications?
Yes - it is AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supports PPAP documentation. While the MOSFET itself is not ASIL-rated, its robustness (100% UIS test, +175°C rating, low Qgd × RDS(ON)) makes it suitable for ASIL-B/C subsystems such as radar power supplies and camera module DC-DC stages when used within validated system-level safety mechanisms.
DMTH45M5LFVWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 978 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 51W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMTH45M5LFVWQ-7 FAQ
1.How can I place an order for DMTH45M5LFVWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH45M5LFVWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH45M5LFVWQ-7 reliable?
The price and inventory of DMTH45M5LFVWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH45M5LFVWQ-7 is usually 5 days.
3.What payment methods are accepted for DMTH45M5LFVWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH45M5LFVWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH45M5LFVWQ-7?
DMTH45M5LFVWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH45M5LFVWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH45M5LFVWQ-7?
For technical support, including DMTH45M5LFVWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH45M5LFVWQ-7 requirements.
6.How does Aetrix verify that DMTH45M5LFVWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMTH45M5LFVWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH45M5LFVWQ-7 meets industry standards.
7.What is the process for return or replacement of DMTH45M5LFVWQ-7?
All DMTH45M5LFVWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH45M5LFVWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH45M5LFVWQ-7 part is unused and in its original packaging.
Return procedure for DMTH45M5LFVWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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