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Diodes Incorporated DMTH45M5LPDW-13
- Part No.:
- DMTH45M5LPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH45M5LPDW-13.pdf
- Description:
- MOSFET 2N-CH 40V 79A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:1,464
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Product details
Overview
DMTH45M5LPDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 40V VDSS, 5.5mΩ RDS(ON) @ 10V VGS, and 79A ID at TC = +25°C. It operates up to +175°C junction temperature and features wettable flanks for automated optical inspection-designed for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMTH45M5LPDW-13 datasheet, DMTH45M5LPDW-13 pinout, DMTH45M5LPDW-13 application, or DMTH45M5LPDW-13 equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, robust UIS rating (19.8A/19.6mJ), and thermal performance with RθJC = 2.5°C/W for high-power density board layouts.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single PowerDI5060-8 package with exposed drain pads for thermal conduction. Its gate threshold voltage (1.2–2.3V) enables compatibility with 3.3V and 5V logic-level drivers, while low input capacitance (Ciss = 978pF) and fast switching (tr = 3.1ns, tf = 5.5ns) support high-frequency synchronous buck topologies.
The device uses trench-gate technology to achieve low on-resistance without sacrificing switching speed. Its 100% production-tested UIS capability ensures reliability under inductive load transients, and the normalized RDS(ON) variation ≤1.6× over –55°C to +175°C supports stable operation in automotive under-hood and industrial motor control environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Supports 24V and 36V nominal input rails with 2× safety margin against transient spikes |
| RDS(ON) @ 10V | 4.3–5.5mΩ - Enables <1.4W conduction loss at 79A, critical for thermally constrained PCBs |
| RDS(ON) @ 4.5V | 6.1–7.9mΩ - Ensures usable channel resistance with standard 3.3V microcontroller GPIO drive |
| ID (TC = 25°C) | 79A - Delivers high current per channel without external heatsinking when mounted on 2oz copper |
| EAS | 19.6mJ - Withstands repetitive inductive energy surges in motor gate drivers and solenoid controls |
| RθJC | 2.5°C/W - Allows direct thermal coupling to heatsink or chassis via exposed drain pad for >40W power dissipation |
| TJ max | +175°C - Qualified for under-hood automotive, industrial inverters, and sealed power supplies |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed dual drain pads. Molded green compound (UL 94V-0), matte tin annealed terminals, wettable flank side walls for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane for minimal loop inductance |
| 2 (G1) | Gate of Channel 1 | Control input requiring <14nC total gate charge (Qg) for full turn-on at 10V |
| 3 (D1) | Drain of Channel 1 | Exposed copper pad-primary thermal path and high-current output node |
| 4 (D2) | Drain of Channel 2 | Second exposed copper pad-enables independent high-side or parallel configuration |
| 5 (G2) | Gate of Channel 2 | Independent control terminal; matched threshold and timing to G1 for synchronous operation |
| 6 (S2) | Source of Channel 2 | Isolated source node-supports half-bridge, H-bridge, or dual low-side switching |
| 7, 8 (D1/D2) | Drain tie points | Internally connected to respective drain pads; used for mechanical anchoring and thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables deployment in engine control units and industrial drives without derating at ambient >125°C |
| 100% production UIS tested | Guarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external snubbers |
| Wettable flank leads | Supports automated AOI detection of solder fillet height and voiding on all eight terminals |
| Low Qgd/Qg ratio (0.9/13.9nC) | Reduces Miller-induced shoot-through risk in high-side switching applications |
| Halogen- and antimony-free "Green" construction | Meets EU RoHS 3 (2015/863/EU) and automotive ELV Directive compliance requirements |
Applications
| Wireless Charging Transmitter | Industrial DC-DC Converter |
|---|---|
Use Scenario: 15W–30W Qi-compliant transmitter using synchronous rectification and resonant half-bridge topology. IC Role / Device Role / Timing Role: Dual N-channel switch implementing low-loss half-bridge power stage with shared gate drive timing. Use Value: 5.5mΩ RDS(ON) reduces conduction loss by >35% vs. comparable 8mΩ MOSFETs, improving thermal headroom at 200kHz switching. | Use Scenario: 48V-to-12V isolated DC-DC module for PLC backplanes and factory automation controllers. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier pair in active clamp forward converter with 100–500kHz PWM. Use Value: RθJC = 2.5°C/W allows direct mounting to aluminum chassis, eliminating discrete heatsinks and reducing BOM count. |
| Automotive Body Control Module | Server PSU OR-ing Circuit |
Use Scenario: High-side load switch for LED headlamp drivers and HVAC blower motors in AEC-Q101 qualified systems. IC Role / Device Role / Timing Role: Dual-channel high-side driver with integrated body diode for reverse polarity protection and freewheeling. Use Value: VSD = 0.9–1.2V at 25A enables efficient freewheeling without external Schottky diodes, saving board space. | Use Scenario: Redundant 12V power rail OR-ing in enterprise server PSUs with hot-swap capability. IC Role / Device Role / Timing Role: Dual N-MOSFET ideal diode controller interface with independent channel control for fault isolation. Use Value: Matched RDS(ON) between channels ensures balanced current sharing during parallel operation and seamless switchover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH45M5LPDWQ | AEC-Q101 qualified variant with identical electrical specs and +175°C rating; same PowerDI5060-8 package | Required for automotive production; includes extended reliability testing (HTOL, TC, UHAST) | Select when automotive qualification is mandatory; otherwise, standard DMTH45M5LPDW-13 offers cost advantage |
| IPB80N04S4-02 | Single-channel TO-263 package; 2.0mΩ RDS(ON) @ 10V but higher Qg (71nC); no wettable flanks | Better conduction efficiency at high current, but requires larger PCB area and lacks AOI support | Choose only if ultra-low RDS(ON) outweighs layout density and inspection needs |
Compared with DMTH45M5LPDWQ, the base part lacks automotive qualification but matches all electrical and thermal specs; versus IPB80N04S4-02, it trades 3.5mΩ higher RDS(ON) for dual-channel integration, smaller footprint, and manufacturability advantages in high-volume SMT lines.
Availability
DMTH45M5LPDW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, industrial DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for DMTH45M5LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in thermally demanding environments-from consumer wireless chargers to industrial motor drives.
FAQ
What is the maximum continuous drain current at TC = +100°C?
The DMTH45M5LPDW-13 supports 55A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and ensures safe operation without exceeding the +175°C maximum junction temperature under sustained load conditions.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage range of 1.2–2.3V and is fully enhanced at VGS ≥ 4.5V. Turn-off is achieved by pulling the gate to 0V; applying negative voltage is unnecessary and not recommended, as the gate-source voltage rating is only ±20V and negative bias provides no functional benefit.
Can both channels be paralleled for higher current handling?
Yes-both N-channel channels are electrically matched per datasheet characterization (RDS(ON), VGS(TH), Qg). When paralleled with symmetrical PCB layout and gate drive, they share current within ±5% at 79A total, enabling 158A capability while maintaining thermal balance and avoiding current hogging.
Is the PowerDI5060-8 package compatible with standard reflow profiles?
Yes. The package is rated for moisture sensitivity level 1 (MSL-1) per J-STD-020 and supports industry-standard lead-free reflow profiles (peak 260°C, 60s above 217°C). Its matte tin annealed finish ensures reliable solderability per MIL-STD-202, Method 208, with no pre-bake required for dry storage.
DMTH45M5LPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 79A (Tc)
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 978pF @ 20V
- Power - Max:
- 3W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMTH45M5LPDW-13 FAQ
1.How can I place an order for DMTH45M5LPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH45M5LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH45M5LPDW-13 reliable?
The price and inventory of DMTH45M5LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH45M5LPDW-13 is usually 5 days.
3.What payment methods are accepted for DMTH45M5LPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH45M5LPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH45M5LPDW-13?
DMTH45M5LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH45M5LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH45M5LPDW-13?
For technical support, including DMTH45M5LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH45M5LPDW-13 requirements.
6.How does Aetrix verify that DMTH45M5LPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH45M5LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH45M5LPDW-13 meets industry standards.
7.What is the process for return or replacement of DMTH45M5LPDW-13?
All DMTH45M5LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH45M5LPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH45M5LPDW-13 part is unused and in its original packaging.
Return procedure for DMTH45M5LPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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