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Diodes Incorporated DMTH45M5LPDWQ-13
- Part No.:
- DMTH45M5LPDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH45M5LPDWQ-13.pdf
- Description:
- MOSFET 2N-CH 40V 79A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:738
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Product details
Overview
DMTH45M5LPDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 40V VDSS, 5.5mΩ RDS(ON) @ 10V VGS, and 79A ID at TC = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power stages including wireless charging transmitters and high-efficiency DC-DC converters operating up to +175°C junction temperature.
For engineers reviewing the DMTH45M5LPDWQ-13 datasheet, DMTH45M5LPDWQ-13 pinout, DMTH45M5LPDWQ-13 application, or DMTH45M5LPDWQ-13 equivalent, this part supports high-current synchronous rectification, low-loss switching in 12V/48V automotive subsystems, and thermally demanding power management where wettable flank inspection and robust UIS performance are required.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single PowerDI5060-8/SWP (Type UXD) package with exposed drain pads for thermal conduction. Its gate threshold voltage range (1.2–2.3V) enables compatibility with 3.3V and 5V logic-level drive, while its low Ciss (978pF) and fast switching times (tD(ON) = 2.8ns, tF = 5.5ns) support high-frequency operation in resonant and hard-switched topologies.
The device features 100% production-tested unclamped inductive switching (UIS) up to 19.8A/19.6mJ, ensuring ruggedness against transient energy in automotive load-dump and inductive kickback events. Its RDS(ON) remains stable across -55°C to +175°C, with normalized variation ≤1.6× at TJ = +175°C versus 25°C - critical for under-hood applications with wide ambient swings.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage for 12V/48V automotive bus interfaces and secondary-side synchronous rectification. |
| RDS(ON) @ 10V | 5.5mΩ max - Enables <1.4W conduction loss at 79A, supporting high-current power delivery with minimal thermal rise. |
| ID @ TC = 25°C | 79A - Sustained current capability with heatsink mounting; derates to 55A at TC = 100°C per thermal design constraints. |
| Qg @ 10V | 13.9nC - Low gate charge reduces driver power and enables efficient 500kHz+ switching in buck and half-bridge converters. |
| TJ Range | -55°C to +175°C - Qualified for engine bay, transmission control, and ADAS ECU environments without derating. |
| EAS | 19.6mJ - Confirmed avalanche energy rating ensures reliability during inductive turn-off without external snubbers. |
| Ciss | 978pF - Low input capacitance minimizes Miller effect and improves gate drive efficiency in high-speed switching. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount with dual exposed drain pads for enhanced thermal dissipation and wettable flank terminals for automated optical inspection (AOI).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 for independent gate control. |
| G1 | Gate of Channel 1 | Control terminal for first channel; requires <2.3V VGS(TH) to initiate conduction. |
| S2 | Source of Channel 2 | Independent source node enabling dual half-bridge or parallel configurations without shared source impedance. |
| G2 | Gate of Channel 2 | Separate gate input allows asynchronous or complementary drive of second channel. |
| D1, D2 | Drain terminals (exposed pad) | Internally connected to common thermal pad; provides primary heat path to PCB copper and enables current sharing between channels. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables direct placement in high-ambient zones (e.g., near engines or inverters) without external cooling augmentation. |
| 100% UIS tested in production | Guarantees minimum 19.8A/19.6mJ avalanche capability per unit - eliminates need for batch screening in safety-critical designs. |
| Wettable flank leads | Supports automated optical inspection of solder fillet integrity on all eight side terminals, improving manufacturing yield in automotive SMT lines. |
| Low RDS(ON) @ 4.5V | 7.9mΩ max enables full enhancement with 5V microcontroller GPIO or automotive PMIC gate drivers without level-shifting. |
| AEC-Q101 qualification & PPAP support | Validated for automotive use with full change control documentation, IATF 16949 manufacturing, and RoHS 3 / Halogen-free compliance. |
Applications
| Wireless Charging Transmitter | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: High-power 15W+ Qi-compliant transmitter stage driving series-resonant tank at 100–205kHz. IC Role / Device Role / Timing Role: Dual N-channel switch implementing synchronous half-bridge; each channel handles one leg of H-bridge with independent gate control. Use Value: 5.5mΩ RDS(ON) and 13.9nC Qg minimize conduction and switching losses, enabling >94% system efficiency at full load while maintaining <175°C TJ. |
Use Scenario: 48V-to-12V bidirectional buck-boost converter in 48V mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier pair in interleaved phase-leg configuration; operates with 100kHz–300kHz PWM. Use Value: Matched dual die ensures balanced current sharing; 100% UIS rating withstands inductive flyback during fault conditions without failure. |
| Engine Control Unit Power Stage | ADAS Camera Power Supply |
|
Use Scenario: High-side/low-side driver for fuel injector or ignition coil control in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Dual-channel switch implementing programmable dwell time and current limiting via external sense resistors. Use Value: -55°C to +175°C operation supports cold-cranking and under-hood thermal cycling; wettable flanks ensure solder joint reliability over 15-year vehicle life. |
Use Scenario: Compact 5V/3A point-of-load regulator supplying image sensor and ISP in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (1MHz) buck converter; driven by integrated controller with adaptive gate timing. Use Value: Low 7.9mΩ RDS(ON) @ 4.5V enables direct drive from 5V PMIC outputs; small PowerDI5060-8 footprint saves board space in tight camera housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH45M5LPSQ-13 | Same die, PQFN-8 package (no wettable flanks); RθJC = 2.5°C/W identical but RθJA = 42°C/W vs. 50°C/W due to different thermal pad layout. | Lacks AOI-compatible side terminals; suitable for non-automotive industrial use where optical inspection is not mandated. | Select when cost sensitivity outweighs AOI requirement and thermal environment is less extreme than under-hood. |
| IPB80N04S4-02 | Single-channel TO-263-3; 2.0mΩ RDS(ON) @ 10V but larger footprint and no AEC-Q101 qualification; requires two devices for dual functionality. | Not qualified for automotive; lacks PPAP support and fails wettable flank and +175°C requirements. | Only viable for non-automotive 48V systems where highest efficiency is prioritized over qualification and compact dual integration. |
Compared with DMTH45M5LPDWQ-13, DMTH45M5LPSQ-13 trades AOI capability for marginally better board-level thermal resistance, while IPB80N04S4-02 delivers lower RDS(ON) but sacrifices automotive qualification, dual integration, and manufacturability - making DMTH45M5LPDWQ-13 optimal for space-constrained, safety-compliant automotive power stages.
Availability
DMTH45M5LPDWQ-13 is available at Aetrix Electronics and suitable for automotive wireless charging, 48V DC-DC conversion, and engine control unit power stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 traceability.
Supply support for DMTH45M5LPDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature automotive subsystems including powertrain, body electronics, and ADAS - emphasizing AEC-Q101 compliance, PPAP readiness, and thermal robustness.
FAQ
Is DMTH45M5LPDWQ-13 suitable for synchronous rectification in a 48V-to-12V DC-DC converter?
Yes. With 5.5mΩ RDS(ON) @ 10V and 79A continuous current rating at TC = 25°C, it delivers low conduction loss in high-current synchronous rectifier stages. Its 100% UIS-tested avalanche capability (19.6mJ) also protects against inductive transients during fault conditions typical in automotive DC-DC topologies.
What is the maximum gate drive voltage supported by DMTH45M5LPDWQ-13?
The absolute maximum gate-source voltage is ±20V per datasheet Section "Maximum Ratings." For reliable long-term operation, gate drive should be limited to 10V–15V - sufficient to fully enhance both channels (VGS(TH) = 1.2–2.3V) while staying within safe oxide stress limits and avoiding accelerated wear-out.
Does DMTH45M5LPDWQ-13 require a heatsink for operation at 79A continuous current?
No discrete heatsink is required if mounted on a 2oz copper PCB with ≥1-inch² thermal pad connected to the exposed drain terminals. At TC = 25°C, its RθJC = 2.5°C/W enables 60W power dissipation; however, sustained 79A operation demands careful thermal layout - including internal ground plane coupling and airflow - to maintain TJ ≤ 175°C.
How does the wettable flank feature improve manufacturing yield in automotive assembly?
The wettable flank geometry on all eight side terminals enables automated optical inspection (AOI) of solder fillet height and contour during reflow, detecting voids, insufficient wetting, or bridging before functional test. This reduces field failures in safety-critical automotive modules and supports zero-defect quality goals mandated by IATF 16949.
DMTH45M5LPDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 79A (Tc)
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 978pF @ 20V
- Power - Max:
- 3W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMTH45M5LPDWQ-13 FAQ
1.How can I place an order for DMTH45M5LPDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH45M5LPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH45M5LPDWQ-13 reliable?
The price and inventory of DMTH45M5LPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH45M5LPDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH45M5LPDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH45M5LPDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH45M5LPDWQ-13?
DMTH45M5LPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH45M5LPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH45M5LPDWQ-13?
For technical support, including DMTH45M5LPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH45M5LPDWQ-13 requirements.
6.How does Aetrix verify that DMTH45M5LPDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH45M5LPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH45M5LPDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH45M5LPDWQ-13?
All DMTH45M5LPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH45M5LPDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH45M5LPDWQ-13 part is unused and in its original packaging.
Return procedure for DMTH45M5LPDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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