Diodes Incorporated DMTH45M5SFVW-13

Overview

DMTH45M5SFVW-13 from Diodes Incorporated is a 40V, 71A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 5.5mΩ R_DS(ON) at V_GS = 10V, rated for +175°C operation, and optimized for high-efficiency DC-DC converters in automotive and industrial power management.

For engineers reviewing the DMTH45M5SFVW-13 datasheet, DMTH45M5SFVW-13 pinout, DMTH45M5SFVW-13 application, or DMTH45M5SFVW-13 equivalent, key selection criteria include R_DS(ON) stability over temperature, UIS ruggedness, wettable flank inspection capability, and thermal performance under TC = +25°C and TA = +25°C conditions.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining fast switching with Q_gd × R_DS(ON) figure-of-merit of 0.9nC × 5.5mΩ. Its body diode exhibits t_RR = 61.3ns and Q_RR = 52.1nC at IF = 25A and di/dt = 100A/μs.

The device supports gate drive voltages from 2.0V to 10V (V_GS(TH) = 2.0–3.5V), operates across –55°C to +175°C junction range, and delivers 51W power dissipation at T_C = +25°C with R_θJC = 2.9°C/W to the exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, wettable flank, molded plastic with UL 94V-0 rating and exposed drain pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH45M5SFVW-13, DMTH45M5SFVWQ adds AEC-Q101 compliance without sacrificing electrical specs, while IPB45N40C3 trades compact wettable-flank packaging and superior thermal resistance for legacy TO-263 compatibility and slightly lower R_DS(ON).

Availability

DMTH45M5SFVW-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 48V DC-DC converters, and server VRM applications requiring stable component supply, high-temperature operation, and AOI-compatible packaging.

Supply support for DMTH45M5SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and timing solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® trench-MOSFET product line, engineered for high-current, high-temperature power conversion where low R_DS(ON), ruggedness, and manufacturability are critical.

FAQ

What is the maximum continuous drain current at T_A = +100°C?

The DMTH45M5SFVW-13 supports 13A continuous drain current at ambient temperature of +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of FR-4 PCB mounting without heatsink; actual usable current depends on copper area, airflow, and layout.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The gate threshold voltage is 2.0–3.5V, and the device fully turns off with V_GS = 0V. A negative gate voltage is not required; however, driving gate to –5V improves noise immunity in high-dv/dt environments like motor drives.

Is the exposed drain pad electrically connected to any pins?

Yes-the exposed drain pad is internally connected to pins 1–4 and 7–8 (all drain terminals) and must be soldered to a large PCB copper pour for both thermal conduction and electrical connection to the drain net.

How does the wettable flank feature impact reflow profile requirements?

The wettable flank geometry requires standard SnAgCu reflow profiles but mandates precise stencil aperture design (0.15mm thickness, 1:1 area ratio) to ensure consistent solder fillet formation on all four side edges for AOI validation.