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Diodes Incorporated DMTH45M5SFVW-7
- Part No.:
- DMTH45M5SFVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH45M5SFVW-7.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:4,390
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Product details
Overview
DMTH45M5SFVW-7 from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for continuous drain current of 71A at TC = +25°C, with RDS(ON) = 4.2 mΩ (typ) at VGS = 10V and junction temperature up to +175°C. It delivers low conduction loss and high avalanche robustness (EAS = 21 mJ), optimized for high-efficiency DC-DC converters in automotive and industrial power systems.
For engineers reviewing the DMTH45M5SFVW-7 datasheet, DMTH45M5SFVW-7 pinout, DMTH45M5SFVW-7 application, or DMTH45M5SFVW-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS capability, and thermal performance validated under +175°C operating conditions - critical for under-hood and high-reliability power management designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low RDS(ON) while maintaining fast switching dynamics: Qgd = 0.9 nC and tF = 4.5 ns at VDD = 20V, ID = 25A. Its gate threshold voltage (VGS(TH) = 2.0–3.5 V) ensures stable turn-on across -55°C to +175°C junction range.
The device integrates a robust body diode with tRR = 61.3 ns and QRR = 52.1 nC at di/dt = 100 A/μs, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal resistance RθJC = 2.9 °C/W enables high-power density mounting on exposed copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche onset; supports 36V nominal bus systems with margin. |
| RDS(ON) | 4.2 mΩ (typ) @ VGS = 10V, ID = 25A - Enables <1.5 W conduction loss at 60A, reducing heatsink requirements. |
| ID (continuous) | 71 A @ TC = +25°C - Validated for high-current power stages when mounted on thermally enhanced PCBs. |
| EAS | 21 mJ @ L = 0.1 mH - Confirmed energy-handling capability during unclamped inductive switching events. |
| TJ max | +175°C - Rated for sustained operation in engine bay, motor control, and industrial ambient environments. |
| Qg | 13.2 nC - Low total gate charge reduces driver power and enables efficient 500 kHz+ switching. |
| Ciss | 1083 pF @ VDS = 20V - Predictable input capacitance aids gate drive loop stability analysis. |
Pinout & Package
Package: PowerDI3333-8/SWP (Type UX), surface-mount, wettable flank, exposed drain pad for thermal and electrical connection. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), with 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (common source node) | All eight pins are internally connected to the exposed drain pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Source (S) | Source terminal | Two dedicated source leads (pins 3 & 4 per bottom view marking) - enable Kelvin sensing and reduce source inductance in high-di/dt applications. |
| G (Gate) | Gate terminal | Single gate lead (pin 1 per top view) - designed for standard gate drivers with ≤1.5 Ω intrinsic gate resistance. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables operation in under-hood automotive modules and industrial motor drives without derating at elevated ambient. |
| Wettable flank package | Facilitates automated optical inspection (AOI) of solder joint integrity on all side terminals - improves manufacturing yield and field reliability. |
| 100% production UIS tested | Each unit passes unclamped inductive switching stress test (IAS = 20.5 A, EAS = 21 mJ), ensuring robustness against load dump and inductive kickback. |
| Low Qgd × RDS(ON) figure-of-merit | 3.78 nC·mΩ - balances switching speed and conduction loss for high-frequency, high-efficiency SMPS designs. |
| Halogen- and antimony-free "Green" construction | Meets J-STD-020 moisture sensitivity Level 1 and RoHS 3 compliance (<900 ppm Br/Cl, <1000 ppm Sb). |
Applications
| Automotive LED Headlamp Driver | Industrial DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-side switch controlling 40V LED strings in adaptive front lighting systems (AFS), operating continuously at +125°C ambient. IC Role / Device Role / Timing Role: Primary power switch in constant-current buck regulator, handling 5–7 A average output with 500 kHz PWM. Use Value: RDS(ON) stability over temperature and +175°C rating eliminate thermal shutdown during peak beam modes. |
Use Scenario: 24V-to-5V/20A point-of-load converter in programmable logic controller (PLC) backplane power supply. IC Role / Device Role / Timing Role: Synchronous rectifier in dual-phase interleaved buck stage, switching at 300 kHz with 40 ns dead-time control. Use Value: Low Qgd and fast tF minimize shoot-through risk and improve light-load efficiency by >2.1% vs. legacy 8 mΩ MOSFETs. |
| Server VRM High-Side Switch | Medical Imaging Power Supply |
|
Use Scenario: 12V input, 0.8V/120A CPU voltage regulator module (VRM) with multiphase topology and strict transient response requirements. IC Role / Device Role / Timing Role: High-side switching element in each phase leg, driven by dedicated gate controller with 1.5 Ω series resistance. Use Value: 2.9 °C/W RθJC allows direct thermal coupling to VRM heatsink, sustaining 100A peak current without exceeding TJ = 150°C. |
Use Scenario: Isolated 48V-to-12V auxiliary supply in portable X-ray generator, requiring zero field failures over 10-year service life. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter, subjected to repetitive 100V overshoot transients. Use Value: Production-tested UIS and 21 mJ EAS ensure immunity to transformer leakage energy spikes without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH45M5SFVWQ-7 | Automotive-grade variant (AEC-Q101 qualified); identical RDS(ON), VDSS, and package but with extended qualification testing and traceability. | Required for ASIL-B automotive subsystems; not necessary for industrial or medical non-safety-critical use. | Select when functional safety certification (e.g., ISO 26262) or automotive OEM sourcing mandates apply. |
| IPB180N04S4-02 | 40V, 180A rated part in TO-263 package; RDS(ON) = 1.8 mΩ (lower), but larger footprint and no wettable flank. | Better conduction loss at >100A, but incompatible with AOI-based assembly and space-constrained layouts. | Prefer for high-current, non-AOI production where thermal mass outweighs board area constraints. |
Compared with DMTH45M5SFVWQ-7, the base part offers identical electrical and thermal specs without AEC-Q101 overhead; versus IPB180N04S4-02, it trades absolute RDS(ON) for compactness, manufacturability, and thermal responsiveness in mid-power applications.
Availability
DMTH45M5SFVW-7 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and medical imaging power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for DMTH45M5SFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for thermally demanding, high-efficiency switching applications where compact size, robustness, and AOI-compatible packaging are essential.
FAQ
What is the maximum allowable gate-source voltage for DMTH45M5SFVW-7?
The absolute maximum VGS rating is ±20 V, as specified in the datasheet's Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V during normal switching and limited to ≤±20 V during transients using Zener or TVS protection.
Does DMTH45M5SFVW-7 require a gate resistor, and what value is recommended?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. Based on measured Rg = 1.5 Ω and Qg = 13.2 nC, a 3.5 Ω series resistor (as used in the datasheet's switching time test condition) provides optimal trade-off between turn-on speed and ringing suppression for 20–500 kHz operation.
Can DMTH45M5SFVW-7 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(ON) (normalized RDS(ON) increases with TJ) enables stable current sharing. Successful parallel operation requires matched layout symmetry, individual gate resistors, and shared source inductance minimization - verified in Diodes' application note AP02011.
Is the PowerDI3333-8/SWP package compatible with standard reflow profiles?
Yes - the package meets IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and is qualified for standard lead-free reflow (peak 260°C, 20–40 sec above 217°C). The wettable flank design ensures reliable solder fillet formation under typical stencil aperture and paste volume settings.
DMTH45M5SFVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1083 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 51W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMTH45M5SFVW-7 FAQ
1.How can I place an order for DMTH45M5SFVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH45M5SFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH45M5SFVW-7 reliable?
The price and inventory of DMTH45M5SFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH45M5SFVW-7 is usually 5 days.
3.What payment methods are accepted for DMTH45M5SFVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH45M5SFVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH45M5SFVW-7?
DMTH45M5SFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH45M5SFVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH45M5SFVW-7?
For technical support, including DMTH45M5SFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH45M5SFVW-7 requirements.
6.How does Aetrix verify that DMTH45M5SFVW-7 is sourced from the original manufacturer or authorized distributors?
All DMTH45M5SFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH45M5SFVW-7 meets industry standards.
7.What is the process for return or replacement of DMTH45M5SFVW-7?
All DMTH45M5SFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH45M5SFVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH45M5SFVW-7 part is unused and in its original packaging.
Return procedure for DMTH45M5SFVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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