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Diodes Incorporated DMTH45M5SFVWQ-13

Part No.:
DMTH45M5SFVWQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH45M5SFVWQ-13.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,313

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Product details

Overview

DMTH45M5SFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8/SWP package, delivering 5.5 mΩ RDS(ON) @ VGS = 10 V, 71 A continuous drain current at TC = +25°C, and rated for operation up to +175°C junction temperature - designed for automotive backlighting, DC-DC converters, and power-management functions.

For engineers reviewing the DMTH45M5SFVWQ-13 datasheet, DMTH45M5SFVWQ-13 pinout, DMTH45M5SFVWQ-13 application, or DMTH45M5SFVWQ-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Qgd × RDS(ON) figure-of-merit, and IATF 16949-certified manufacturing with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (2.0–3.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while the 1.5 Ω gate resistance supports controlled dV/dt and EMI management in hard-switched topologies.

The device integrates a robust body diode with 61.3 ns reverse recovery time and 52.1 nC QRR, enabling efficient synchronous rectification and freewheeling in buck, boost, and half-bridge configurations. Thermal design is enabled by RθJC = 2.9 °C/W and RθJA = 42 °C/W on FR-4, with the exposed drain pad providing direct thermal path to PCB copper.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum blocking voltage for 12 V/24 V automotive bus systems with transient margin.
RDS(ON) Max 5.5 mΩ @ VGS = 10 V - Ensures ≤14 W conduction loss at 71 A, critical for thermally constrained modules.
ID Continuous 71 A @ TC = +25°C - Supports high-current power stages without external heatsinking when mounted on ≥1″² 2 oz copper.
Qg 13.2 nC - Enables <5.4 ns turn-on delay with 3.5 Ω gate resistor, suitable for 500 kHz+ switching.
EAS 21 mJ - Confirmed avalanche energy rating ensures survivability during inductive load switching faults.
TJ Range −55°C to +175°C - Validated operation across full automotive under-hood temperature envelope.
Wettable Flank Yes - Exposed side terminals enable automated optical inspection (AOI) of solder joint integrity on SMT assembly lines.

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced molded plastic with exposed drain pad and wettable flank terminals. UL 94V-0 rated, MSL Level 1, 0.029 g mass.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts 0–10 V drive; 1.5 Ω internal gate resistance limits peak current and dV/dt.
2, 3, 4, 5, 6, 7 (S) Source Power return path; six parallel source pins reduce package inductance and improve current sharing.
8 (D) Drain Main power output node; connected to large exposed copper pad for thermal dissipation and low-inductance layout.

Key Features

Feature Design Value
AEC-Q101 qualified + PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
100% UIS tested in production Every unit undergoes unclamped inductive switching stress test (L = 0.1 mH, IAS = 20.5 A), ensuring field reliability in motor and solenoid drives.
Low Qgd × RDS(ON) FOM Qgd = 0.9 nC × RDS(ON) = 5.5 mΩ = 4.95 nC·mΩ - minimizes switching loss and improves efficiency in high-frequency DC-DC converters.
+175°C rated operation Guaranteed parametric performance and lifetime stability up to maximum junction temperature - eliminates derating in engine bay applications.
Halogen- & antimony-free "Green" <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets global environmental compliance requirements including RoHS 3 and automotive ELV directives.

Applications

Automotive LED Backlighting 12 V Automotive DC-DC Converters

Use Scenario: High-brightness LED string control in instrument clusters and center displays under wide ambient temperature swings.

IC Role / Device Role / Timing Role: High-side or low-side PWM switch regulating constant current to LED loads.

Use Value: 5.5 mΩ RDS(ON) minimizes heat generation in sealed enclosures; +175°C rating prevents thermal shutdown during summer parking conditions.

Use Scenario: Primary-side synchronous rectifier or high-side switch in 12 V → 3.3 V/5 V buck converters for ADAS ECUs and infotainment systems.

IC Role / Device Role / Timing Role: Power switch operating at 300–600 kHz with tight duty-cycle control.

Use Value: Low Qg (13.2 nC) and fast tr/tf (2.5 ns / 4.5 ns) enable high-efficiency switching with minimal gate drive loss.

Engine Control Module Power Management Automotive HVAC Blower Motor Drivers

Use Scenario: Load switching for fuel pump drivers, injector pre-drivers, and sensor bias supplies in engine control units.

IC Role / Device Role / Timing Role: Robust power switch handling repetitive inductive transients and load dump events.

Use Value: 21 mJ EAS and 100% production UIS testing ensure survival during 12 V system load-dump surges up to ±40 V.

Use Scenario: Half-bridge H-bridge driver for variable-speed HVAC blower motors in passenger cabin systems.

IC Role / Device Role / Timing Role: Low-side switch in complementary pair with matched timing characteristics.

Use Value: Matched RDS(ON) and fast body diode recovery (tRR = 61.3 ns) reduce cross-conduction losses and improve motor torque linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL135N4LF8AG RDS(ON) = 3.8 mΩ @ 10 V, but rated only to +150°C; no wettable flank; Qg = 22 nC. Better conduction loss at lower temp, but unsuitable for under-hood >+150°C zones; AOI not supported. Select if thermal budget allows lower TJ and optical inspection is not required.
IPB180N04S4-02 RDS(ON) = 1.8 mΩ @ 10 V, TO-263-7 package, RθJC = 1.4 °C/W, but no AEC-Q101 certification stated in public datasheet. Higher current capability (180 A), but lacks PPAP documentation and automotive qualification evidence. Select only for non-safety-critical industrial applications where AEC-Q101 is not mandated.

Compared with STL135N4LF8AG and IPB180N04S4-02, DMTH45M5SFVWQ-13 uniquely balances +175°C operation, wettable flank AOI compatibility, and AEC-Q101/PPAP readiness - making it the preferred choice for thermally demanding, volume automotive production where traceability and visual process control are mandatory.

Availability

DMTH45M5SFVWQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC power conversion, and engine control module power management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH45M5SFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets, with over 50 years of power semiconductor expertise.

This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power switching applications demanding high temperature resilience, production-grade robustness, and full PPAP documentation support.

FAQ

Is DMTH45M5SFVWQ-13 qualified for automotive use per AEC-Q101?

Yes - DMTH45M5SFVWQ-13 is fully AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. It undergoes rigorous stress testing including HTGB, HTRB, UHAST, and 100% UIS screening to meet automotive reliability standards.

What is the thermal resistance from junction to case (RθJC) and how should it be used in layout?

RθJC is 2.9 °C/W, measured from junction to the soldering point on the exposed drain pad. To achieve this value, the PCB must provide ≥1″² of 2 oz copper connected directly to the drain pad via multiple thermal vias - critical for sustaining 71 A continuous current without exceeding +175°C junction temperature.

Does DMTH45M5SFVWQ-13 support logic-level gate drive?

It has a gate threshold voltage range of 2.0–3.5 V, allowing turn-on with 3.3 V or 5 V microcontroller outputs. However, full RDS(ON) specification (5.5 mΩ) requires VGS = 10 V; for logic-level operation, RDS(ON) rises to ~12 mΩ at VGS = 4.5 V - acceptable for lower-current applications but increases conduction loss.

How does the wettable flank feature improve manufacturing yield?

The wettable flank exposes vertical sidewalls of pins 1 (G) and 8 (D) for solder meniscus formation during reflow. This enables automated optical inspection (AOI) to verify solder fillet height and wetting quality - reducing field failures from insufficient solder joints in high-vibration automotive assemblies.

DMTH45M5SFVWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1083 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
3.5W (Ta), 51W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMTH45M5SFVWQ-13 FAQ

1.How can I place an order for DMTH45M5SFVWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH45M5SFVWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH45M5SFVWQ-13 reliable?

The price and inventory of DMTH45M5SFVWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH45M5SFVWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH45M5SFVWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH45M5SFVWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH45M5SFVWQ-13?

DMTH45M5SFVWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH45M5SFVWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH45M5SFVWQ-13?

For technical support, including DMTH45M5SFVWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH45M5SFVWQ-13 requirements.

6.How does Aetrix verify that DMTH45M5SFVWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH45M5SFVWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH45M5SFVWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH45M5SFVWQ-13?

All DMTH45M5SFVWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH45M5SFVWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH45M5SFVWQ-13 part is unused and in its original packaging.

Return procedure for DMTH45M5SFVWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH45M5SFVWQ-13 Tags

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