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Diodes Incorporated DMTH45M5SFVWQ-7
- Part No.:
- DMTH45M5SFVWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH45M5SFVWQ-7.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:3,297
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Product details
Overview
DMTH45M5SFVWQ-7 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 5.5 mΩ RDS(ON) @ VGS = 10 V, 71 A continuous drain current at TC = +25°C, and rated for operation up to +175°C junction temperature-designed for automotive backlighting, DC-DC converters, and power-management functions.
For engineers reviewing the DMTH45M5SFVWQ-7 datasheet, DMTH45M5SFVWQ-7 pinout, DMTH45M5SFVWQ-7 application, or DMTH45M5SFVWQ-7 equivalent, key selection criteria include its wettable flank package for optical inspection, 100% production-tested UIS robustness, low Qgd × RDS(ON) figure-of-merit, and IATF 16949-certified manufacturing with PPAP support.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (2.0–3.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while the 13.2 nC total gate charge supports efficient PWM control in synchronous buck stages.
The device integrates a robust body diode with 61.3 ns reverse recovery time and 52.1 nC QRR, enabling reliable freewheeling in inductive loads. Thermal design is supported by 2.9 °C/W RθJC and a thermally enhanced exposed drain pad compatible with PCB copper thermal planes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V automotive rail protection and DC-DC primary-side switching |
| RDS(ON) | 4.2–5.5 mΩ @ VGS = 10 V - Enables ≤0.14 W conduction loss at 60 A, critical for thermally constrained modules |
| ID (TC = +25°C) | 71 A - Supports high-current power stages without external heatsinking when mounted on ≥2 oz copper thermal pads |
| TJ Range | −55°C to +175°C - Validated for under-hood and headlamp ECU applications where ambient exceeds +125°C |
| Qg | 13.2 nC - Allows <50 ns turn-on delay with 3.5 Ω gate resistor, minimizing switching loss in 200–500 kHz converters |
| EAS | 21 mJ - Withstands repetitive inductive energy spikes in motor drive and solenoid control without derating |
| RθJC | 2.9 °C/W - Enables direct thermal coupling to chassis or heatsink via exposed drain pad, reducing system thermal resistance |
Pinout & Package
Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with wettable flank leads and exposed drain pad for solder joint inspection and heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V logic-level drive; 1.5 Ω gate resistance minimizes ringing |
| 2 (S) | Source | Power return path; tied to ground or low-side switch node; referenced for gate drive |
| 3 (S) | Source | Second source connection for reduced bond-wire inductance and improved current sharing |
| 4 (D) | Drain | Main power output; connected to exposed copper pad on bottom for thermal and electrical conduction |
| 5 (D) | Drain | Secondary drain terminal enhancing current capacity and thermal spreading across package |
| 6 (D) | Drain | Third drain terminal reinforcing low-inductance high-current path to PCB thermal plane |
| 7 (D) | Drain | Fourth drain terminal completing symmetric drain layout for balanced current distribution |
| 8 (S) | Source | Third source terminal improving source loop integrity and reducing common-source inductance |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Validated operation at full electrical specs up to TJ = +175°C, eliminating derating in engine bay modules |
| Wettable flank leads | Side-wettable terminations enable automated optical inspection (AOI) of solder fillets without X-ray |
| 100% production UIS testing | Every unit undergoes unclamped inductive switching stress (L = 0.1 mH, IAS = 20.5 A), ensuring field reliability |
| Low Qgd × RDS(ON) FOM | 0.9 nC × 5.5 mΩ = 4.95 mΩ·nC - reduces Miller-induced shoot-through risk in half-bridge configurations |
| AEC-Q101 qualification & PPAP support | Qualified per AEC-Q101 Rev D; full PPAP documentation available; manufactured in IATF 16949-certified facilities |
Applications
| Automotive LED Backlighting | 12 V Automotive DC-DC Converters |
|---|---|
|
Use Scenario: High-brightness LED string control in instrument clusters and center displays requiring PWM dimming at >1 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode current; operates in linear and saturated modes during PWM transitions. Use Value: 5.5 mΩ RDS(ON) limits power loss to <0.2 W at 20 A peak, enabling compact 4-layer PCB layout without forced air cooling. |
Use Scenario: Synchronous rectifier in 12 V input, 3.3 V/5 V output buck converter for ADAS camera modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven complementary to high-side FET with dead-time control. Use Value: 13.2 nC Qg allows clean 200 ns turn-off with 10 Ω gate resistor, minimizing cross-conduction loss at 400 kHz switching frequency. |
| Engine Control Unit Power Management | Automotive Body Control Module Loads |
|
Use Scenario: High-current load switching for fuel pump drivers and HVAC blower motors in ECU submodules. IC Role / Device Role / Timing Role: High-side or low-side power switch handling pulsed 50–70 A loads with 10 μs–100 ms duty cycles. Use Value: 21 mJ EAS withstands inductive kickback from 12 V motor windings without snubber circuitry, simplifying BOM. |
Use Scenario: Solid-state replacement for mechanical relays controlling door locks, window lifts, and mirror actuators. IC Role / Device Role / Timing Role: Protected load switch with integrated body diode clamping; handles bidirectional inductive transients. Use Value: −55°C to +175°C operating range ensures cold-cranking startup and sustained operation in parked vehicles under summer sun exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ @ 10 V, PowerFLAT 5x6; higher RDS(ON) temp coefficient (+0.4%/°C vs. +0.25%/°C) | Better suited for space-constrained modules needing lower RDS(ON); less tolerant of thermal cycling due to higher tempco | Select when board area is critical and thermal margin exceeds 30°C; verify gate drive strength for 22 nC Qg |
| IXTP44N10P | 100 V, 22 mΩ @ 10 V, TO-220AB; non-AEC-Q101, no wettable flanks, RθJC = 1.2 °C/W | Requires heatsink; unsuitable for automated AOI or PPAP-driven automotive programs | Only for industrial/non-automotive prototyping; avoid where AEC compliance, thermal density, or optical inspection are required |
Compared with STL220N4F7AG and IXTP44N10P, DMTH45M5SFVWQ-7 uniquely balances ultra-low RDS(ON), AEC-Q101 validation, wettable flank manufacturability, and +175°C capability-making it optimal for production-grade automotive power stages where reliability, thermal density, and process control are jointly prioritized.
Availability
DMTH45M5SFVWQ-7 is available at Aetrix Electronics and suitable for automotive LED backlighting, 12 V DC-DC converters, and engine control unit power management requiring stable component supply across multi-year vehicle production lifecycles.
Supply support for DMTH45M5SFVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certifications.
This MOSFET belongs to Diodes' PowerDI® automotive-qualified portfolio, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems including lighting, power conversion, and body electronics.
FAQ
What is the maximum allowable gate-source voltage for DMTH45M5SFVWQ-7?
The absolute maximum VGS rating is ±20 V, with typical gate drive operating between 0 V (off) and 10 V (fully enhanced). Exceeding ±20 V risks permanent gate oxide damage; recommended gate drive uses 12 V with series resistor to limit dV/dt-induced overshoot during fast switching.
Does DMTH45M5SFVWQ-7 require a gate driver IC in automotive applications?
A gate driver IC is strongly recommended for PWM frequencies above 50 kHz or when driving multiple parallel devices. The 13.2 nC Qg demands ≥100 mA peak drive current to achieve <50 ns rise/fall times; microcontroller GPIO alone cannot reliably control switching speed or suppress Miller-induced turn-on.
How does the wettable flank feature improve manufacturing yield?
Wettable flank leads allow automated optical inspection (AOI) systems to verify solder fillet formation on all four side terminals, detecting voids, insufficient wetting, or bridging without requiring X-ray. This eliminates manual visual inspection and increases first-pass yield in high-volume SMT lines for automotive modules.
Can DMTH45M5SFVWQ-7 be used in high-side configuration with bootstrap gate drive?
Yes-it supports high-side operation using bootstrap gate drive, provided VGS remains within ±20 V and the bootstrap capacitor sustains sufficient voltage during duty cycles >95%. Its 2.0–3.5 V VGS(TH) ensures reliable turn-on even with bootstrap droop to ~8 V, but layout must minimize high-side source inductance to prevent oscillation.
DMTH45M5SFVWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1083 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 51W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMTH45M5SFVWQ-7 FAQ
1.How can I place an order for DMTH45M5SFVWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH45M5SFVWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH45M5SFVWQ-7 reliable?
The price and inventory of DMTH45M5SFVWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH45M5SFVWQ-7 is usually 5 days.
3.What payment methods are accepted for DMTH45M5SFVWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH45M5SFVWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH45M5SFVWQ-7?
DMTH45M5SFVWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH45M5SFVWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH45M5SFVWQ-7?
For technical support, including DMTH45M5SFVWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH45M5SFVWQ-7 requirements.
6.How does Aetrix verify that DMTH45M5SFVWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMTH45M5SFVWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH45M5SFVWQ-7 meets industry standards.
7.What is the process for return or replacement of DMTH45M5SFVWQ-7?
All DMTH45M5SFVWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH45M5SFVWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH45M5SFVWQ-7 part is unused and in its original packaging.
Return procedure for DMTH45M5SFVWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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