Diodes Incorporated DMTH45M5SPSW-13

Overview

DMTH45M5SPSW from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 86A continuous drain current at TC = +25°C, with R_DS(ON) of 3.9 mΩ (typ) at V_GS = 10V and 25A, and qualified to +175°C junction temperature. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters operating under high ambient thermal stress.

For engineers reviewing the DMTH45M5SPSW datasheet, DMTH45M5SPSW pinout, DMTH45M5SPSW application, or DMTH45M5SPSW equivalent, this page delivers verified electrical specs, thermal performance data, wettable flank package details, and real-world switching behavior-including 20.6 mJ E_AS, 13.2 nC Q_g, and 61.3 ns t_RR-to support high-reliability power stage design.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while preserving fast switching dynamics: C_iss = 1083 pF, C_rss = 21 pF, and t_F = 4.5 ns enable efficient operation in 300–1000 kHz DC-DC topologies. Its 100% production-tested UIS ensures robustness against inductive load transients.

The device integrates an intrinsic body diode with V_SD = 0.84 V (typ) at I_S = 25A and t_RR = 61.3 ns, supporting bidirectional conduction in synchronous buck stages without external Schottky supplementation. Thermal resistance R_θJC = 2.0 °C/W enables direct heatsink mounting via the exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for automated optical inspection. Dimensions: 5.15 × 6.40 mm footprint, 1.0 mm height, 0.097 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH45M5SPSQ-13, the base part lacks automotive qualification but offers identical electrical and thermal performance at lower cost; versus IPB050N04LGATMA1, it trades 14 A current headroom for 40% smaller footprint and 43% lower gate charge - critical for high-density, high-frequency layouts.

Availability

DMTH45M5SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMTH45M5SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' PowerDI® high-current trench-MOSFET product line, engineered specifically for high-efficiency, high-temperature switching in space-constrained power conversion stages where thermal density and reliability are paramount.

FAQ

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±12 V risks permanent gate oxide damage, especially during transient events. For robust design, limit steady-state gate drive to 10 V (ensuring full enhancement) with a 15 V clamping circuit to absorb ringing. The 2.0–3.5 V V_GS(TH) range confirms compatibility with standard 3.3 V and 5 V logic-level drivers when used with appropriate gate resistors.

Does the PowerDI5060-8/SWP package require special PCB layout considerations?

Yes: the exposed drain pad must be connected to a minimum 1-inch² copper pour on the bottom layer using ≥8 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) to achieve the specified R_θJC = 2.0 °C/W. Wettable flank geometry mandates solder mask defined pads with 0.1 mm solder mask expansion to ensure reliable fillet formation visible to AOI systems.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.84 V (typ) at 25 A and t_RR = 61.3 ns - significantly faster than conventional planar MOSFETs but higher forward drop than 0.45 V Schottkys. Its advantage lies in co-packaged integration: no extra footprint, no parasitic inductance, and guaranteed matching to the FET's thermal profile. Use only where synchronous rectification is implemented; avoid body-diode conduction in high-frequency, low-V_OUT designs.

Is the DMTH45M5SPSW suitable for linear-mode (LDO-like) operation?

No - it is optimized for switching operation only. Linear-mode use would exceed safe SOA limits due to simultaneous high V_DS and I_D: the DC SOA curve shows <1 A capability at 20 V V_DS, far below its 86 A pulsed rating. Continuous linear operation risks thermal runaway and irreversible junction damage. Use dedicated LDOs or bipolar pass transistors for regulated linear applications.