Diodes Incorporated DMTH46M7SFVW-13

Overview

DMTH46M7SFVW-13 from Diodes Incorporated is a 40V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 7.4mΩ R_DS(ON) @ V_GS = 10V and 67.2A continuous drain current at T_C = +25°C. It serves as a high-efficiency power switch in DC-DC converters, motor controls, and automotive power management systems requiring robust thermal performance.

For engineers reviewing the DMTH46M7SFVW-13 datasheet, DMTH46M7SFVW-13 pinout, DMTH46M7SFVW-13 application, or DMTH46M7SFVW-13 equivalent, key selection criteria include its 2.75°C/W R_θJC, 100% production-tested UIS capability, wettable flank terminals for automated optical inspection, and AEC-Q101 readiness for automotive-grade deployment.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching. Its gate threshold voltage (2–4V) enables compatibility with 3.3V and 5V logic-level drive, while the 14.8nC total gate charge supports efficient high-frequency operation in synchronous buck converters.

The device features an integrated body diode with 105ns reverse recovery time and 229nC Q_RR, enabling reliable freewheeling in hard-switched topologies. Thermal design is supported by a 175°C maximum junction temperature and 2.75°C/W junction-to-case resistance measured at the exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, wettable flank, exposed drain pad for thermal and electrical connection. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), with 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, DMTH46M7SFVW-13 uniquely combines AEC-Q101 qualification, wettable flank inspection capability, and production-tested UIS-making it the only option among the three validated for automotive under-hood switching without external clamping.

Availability

DMTH46M7SFVW-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and brushless DC motor inverters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH46M7SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and internal fabs.

This MOSFET belongs to Diodes' PowerDI® high-current, high-temperature portfolio-engineered specifically for automotive power distribution, industrial motor control, and high-density power conversion where reliability at 175°C is mandatory.

FAQ

What is the maximum allowable gate-source voltage for DMTH46M7SFVW-13?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±12V risks permanent gate oxide damage, especially at elevated temperatures. For robust 3.3V/5V logic-level drive, a 15V gate drive rail with transient suppression is recommended to maintain margin against overshoot.

Does DMTH46M7SFVW-13 require a gate resistor, and if so, what value is recommended?

Yes-a series gate resistor is required to dampen ringing caused by the 1.13Ω intrinsic gate resistance and PCB parasitics. A 10Ω resistor is typical for 500kHz operation; values between 5Ω and 22Ω balance switching speed and EMI control. Layout must minimize gate loop inductance using short, wide traces adjacent to the source pins.

Can DMTH46M7SFVW-13 be used in a high-side configuration with bootstrap gate driving?

No-it is an N-channel MOSFET and cannot be directly bootstrapped in high-side position without a floating gate driver. For high-side switching, it must be paired with a dedicated high-side driver IC (e.g., DIODES AP22803) that provides isolated gate bias. Its low R_DS(ON) and thermal performance make it viable in such configurations when properly driven.

Is the exposed drain pad electrically connected to the drain terminals, and how should it be soldered?

Yes-the bottom-exposed copper pad is internally connected to all drain pins and serves as both primary thermal path and main current terminal. It must be soldered to a solid, thermally robust PCB copper pour (≥250mm², 2oz Cu) with ≥6 thermal vias (0.3mm diameter, filled) connecting to inner ground or power planes to achieve specified R_θJC and current capacity.