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Diodes Incorporated DMTH46M7SFVWQ-13
- Part No.:
- DMTH46M7SFVWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH46M7SFVWQ-13.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:3,138
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Product details
Overview
DMTH46M7SFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 40 V VDSS, 7.4 mΩ RDS(ON) at VGS = 10 V, and 67.2 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports automotive motor control, DC-DC converters, and power management functions.
For engineers reviewing the DMTH46M7SFVWQ-13 datasheet, DMTH46M7SFVWQ-13 pinout, DMTH46M7SFVWQ-13 application, or DMTH46M7SFVWQ-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low QGD × RDS(ON) figure-of-merit, and IATF 16949-certified manufacturing.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 3.3 V and 5 V logic drivers, while the 1.13 Ω gate resistance supports controlled dV/dt and EMI management.
The device integrates a robust body diode with 105 ns reverse recovery time and 229 nC QRR, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by RθJC = 2.75°C/W and RθJA = 46.8°C/W on FR-4 with 2 oz copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche; suitable for 24 V automotive systems with transient margin. |
| RDS(ON) | 7.4 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A, reducing thermal load in compact power stages. |
| ID (TC = 25°C) | 67.2 A - Continuous current rating with heatsink contact; defines maximum steady-state output capability. |
| Qg | 14.8 nC - Total gate charge determines driver strength requirement and switching energy loss. |
| EAS | 35.3 mJ - Single-pulse avalanche energy rating confirms ruggedness under inductive load turn-off stress. |
| TJ Range | −55°C to +175°C - Full automotive temperature range compliance enables under-hood deployment without derating. |
| Ciss | 1315 pF - Input capacitance impacts gate drive loop stability and Miller effect during high-speed switching. |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, exposed drain pad, wettable flank terminals, 3.3 mm × 3.3 mm footprint, 0.8 mm height, RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Power Drain Terminal (common) | Four parallel drain pins connected to internal die backside; primary heat path to PCB copper and thermal plane. |
| 5, 6, 7, 8 (Source) | Power Source Terminal (common) | Four parallel source pins tied to source metallization; low-inductance return path for high di/dt switching currents. |
| Gate (Pin 1 side, center) | Control Input | Single gate terminal located between drain and source rows; requires <15 nC total charge for full enhancement. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification & PPAP support | Validated for automotive production use with documented change control, failure mode analysis, and lot traceability. |
| Wettable flank terminals | Vertical sidewall plating enables automated optical inspection (AOI) of solder joint integrity without X-ray. |
| 100% UIS tested in production | Every unit undergoes unclamped inductive switching stress test, ensuring minimum 26.6 A avalanche current capability. |
| +175°C maximum junction temperature | Enables operation in engine bay, transmission control, or battery management modules without external cooling. |
| Low QGD × RDS(ON) FOM | Optimized for high-frequency DC-DC conversion where switching loss and conduction loss must both be minimized. |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
|
Use Scenario: High-current H-bridge driver for 12 V/48 V bidirectional motor actuation in steering column assemblies. IC Role / Device Role / Timing Role: Main power switch in dual-phase synchronous buck-boost topology, operating at 50–100 kHz with precise dead-time control. Use Value: 7.4 mΩ RDS(ON) reduces resistive heating during peak assist torque, extending system lifetime in thermally constrained enclosures. |
Use Scenario: Primary-side high-side switch in isolated 12 V → 5 V/3.3 V flyback or active clamp forward converter for ADAS domain controllers. IC Role / Device Role / Timing Role: Fast-switching power transistor handling 20 A peak primary current with <10 ns rise/fall times and minimal Qgd-induced delay. Use Value: 14.8 nC Qg and 1.13 Ω Rg enable clean gate drive with low-power 5 V microcontroller outputs, reducing driver BOM cost. |
| Engine Control Unit (ECU) Fuel Injection | On-Board Charger (OBC) Auxiliary Power Supply |
|
Use Scenario: Low-side driver for multi-point fuel injector solenoids requiring precise 1–5 ms pulse width modulation at 12 V supply. IC Role / Device Role / Timing Role: Saturated switch delivering 16.3 A continuous current at ambient +105°C, with fast turn-off to prevent coil saturation lag. Use Value: 105 ns tRR and 229 nC QRR minimize tail current and voltage overshoot during inductive turn-off, improving injection timing accuracy. |
Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC auxiliary 12 V supply, replacing Schottky diodes to improve efficiency. IC Role / Device Role / Timing Role: Body-diode-commutated synchronous rectifier operating in forced CCM with 20 A average current and 300 A/μs di/dt. Use Value: 0.9–1.2 V VSD forward drop at 20 A cuts conduction loss by >40% vs. 45 V Schottky, directly increasing OBC standby efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ @ 10 V, PowerFLAT 5×6; lower RDS(ON) but higher Qg (34 nC) and no wettable flank. | Better conduction loss at high current, but requires stronger gate driver and lacks AOI capability. | Select when thermal budget is tighter than layout space or optical inspection is not required. |
| IPB180N04S4-02 | 40 V, 1.8 mΩ @ 10 V, TO-leadless; superior RDS(ON) and RθJC (1.4°C/W), but larger 5.15 mm × 6.25 mm footprint. | Higher power density possible, but incompatible with PowerDI3333-8 land pattern and reflow profile. | Select when board area allows larger package and maximum efficiency outweighs AOI and footprint constraints. |
Compared with STL220N4F7AG and IPB180N04S4-02, DMTH46M7SFVWQ-13 delivers balanced performance: mid-range RDS(ON) with industry-leading AOI support, compact 3.3 mm × 3.3 mm footprint, and production-validated UIS robustness-making it optimal for space-constrained, high-reliability automotive modules where inspection and change control are mandatory.
Availability
DMTH46M7SFVWQ-13 is available at Aetrix Electronics and suitable for electric power steering (EPS), engine control units (ECU), and on-board charger (OBC) auxiliary supplies requiring stable component supply across automotive production lifecycles.
Supply support for DMTH46M7SFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101 compliance, high-temperature operation, and PPAP-ready production in IATF 16949-certified facilities.
FAQ
What is the maximum allowable gate-source voltage for DMTH46M7SFVWQ-13?
The absolute maximum VGS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable switching, gate drive should be limited to +10 V to achieve specified RDS(ON) and avoid excessive gate leakage or accelerated wear-out under thermal cycling.
Does DMTH46M7SFVWQ-13 require a gate resistor for automotive applications?
Yes-a series gate resistor (typically 3–10 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during switching. The device's 1.13 Ω intrinsic gate resistance alone is insufficient for EMI-sensitive environments like ADAS or infotainment systems.
Can DMTH46M7SFVWQ-13 be used in paralleled configurations?
Yes-its positive temperature coefficient for RDS(ON) (see Figure 6) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling to ensure uniform junction temperature across devices.
Is the exposed drain pad electrically isolated from other terminals?
No-the exposed drain pad is internally connected to pins 1–4 (drain terminals) and must be soldered to a PCB copper pour serving as both thermal sink and high-current return path. It is not isolated and must be treated as a live high-voltage node during layout.
DMTH46M7SFVWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.3A (Ta), 67.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1315 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 54.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMTH46M7SFVWQ-13 FAQ
1.How can I place an order for DMTH46M7SFVWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH46M7SFVWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH46M7SFVWQ-13 reliable?
The price and inventory of DMTH46M7SFVWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH46M7SFVWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH46M7SFVWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH46M7SFVWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH46M7SFVWQ-13?
DMTH46M7SFVWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH46M7SFVWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH46M7SFVWQ-13?
For technical support, including DMTH46M7SFVWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH46M7SFVWQ-13 requirements.
6.How does Aetrix verify that DMTH46M7SFVWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH46M7SFVWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH46M7SFVWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH46M7SFVWQ-13?
All DMTH46M7SFVWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH46M7SFVWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH46M7SFVWQ-13 part is unused and in its original packaging.
Return procedure for DMTH46M7SFVWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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