Diodes Incorporated DMTH47M2LFVW-13

Overview

DMTH47M2LFVW-13 from Diodes Incorporated is a 40V, 49.0A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for continuous operation up to +175°C junction temperature, with R_DS(ON) = 8.9 mΩ @ V_GS = 10V and 13.5 mΩ @ V_GS = 4.5V, designed for high-efficiency DC-DC converters in automotive and industrial power management systems.

For engineers reviewing the DMTH47M2LFVW-13 datasheet, DMTH47M2LFVW-13 pinout, DMTH47M2LFVW-13 application, or DMTH47M2LFVW-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and low Q_gd × R_DS(ON) figure-of-merit for fast switching with minimal conduction loss.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining controlled gate charge (Q_g = 12.3 nC @ 10V) and low reverse transfer capacitance (C_rss = 19.5 pF), enabling efficient hard-switching in synchronous buck topologies. Its body diode exhibits t_RR = 31.9 ns and Q_RR = 25.0 nC under 100 A/μs dI/dt, supporting moderate-frequency freewheeling.

The device is characterized across -55°C to +175°C, with R_DS(ON) normalized to 1.6× at T_J = 175°C (V_GS = 10V), and V_GS(TH) stable between 1.2–2.3 V with <±0.3 V drift over temperature - ensuring reliable gate drive margin in thermally demanding environments.

Key Specifications

Pinout & Package

PowerDI3333-8 is an 8-pin surface-mount package with exposed drain pad on bottom side, optimized for thermal performance and optical solder-joint inspection. Pin 1 is Gate (G), pins 2–4 and 6–8 are Source (S), and pin 5 is Drain (D) - confirmed via Diodes' official package drawing DS43802 Rev. 2-2, page 2 (Bottom View).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMTH47M2LFVW-13, the DMTH47M2LPSQ-13 trades AOI capability for improved thermal resistance, while the IPB070N15N3G adds unnecessary voltage margin and gate drive burden - making the original optimal for cost-sensitive, high-volume 40V power stages requiring production traceability and visual inspection.

Availability

DMTH47M2LFVW-13 is available at Aetrix Electronics and suitable for automotive LED lighting, industrial DC-DC conversion, and motor control applications requiring stable component supply, extended temperature operation, and AOI-compatible packaging.

Supply support for DMTH47M2LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for compact, thermally constrained power stages in automotive and industrial systems where +175°C operation and production-test reliability are mandatory.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH47M2LFVW-13 supports 34.7 A continuous drain current at case temperature +100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table (DS43802 Rev. 2-2, page 2). This value assumes proper heatsinking to maintain T_C ≤ +100°C and accounts for R_DS(ON) increase with junction temperature.

Does this MOSFET require a gate resistor for 300 kHz switching?

A 3.3 Ω gate resistor is recommended for 300 kHz operation to dampen ringing and limit peak gate current to <1.5 A, based on Q_g = 12.3 nC and typical 12V gate drive swing. The device's R_g = 2.06 Ω internal gate resistance and low C_rss (19.5 pF) allow clean turn-on/turn-off transitions without excessive overshoot.

Is the PowerDI3333-8 package lead-free and RoHS compliant?

Yes - the DMTH47M2LFVW-13 uses matte tin annealed over copper leadframe, contains no intentionally added lead, and meets EU RoHS 2011/65/EU and RoHS 3 2015/863/EU directives. It is also halogen- and antimony-free (<900 ppm Br+Cl, <1000 ppm Sb), certified as a "Green" device per Diodes' quality definitions.

Can this MOSFET replace a TO-220 device in an existing layout?

No - the PowerDI3333-8 is a surface-mount 8-pin package with 3.3 mm × 3.3 mm footprint and exposed drain pad, incompatible with through-hole TO-220 land patterns. Direct replacement requires PCB redesign to accommodate the smaller footprint, thermal pad stencil, and wettable flank solder profile.