Diodes Incorporated DMTH47M2LFVWQ-13

Overview

DMTH47M2LFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for +175°C operation, with R_DS(ON) = 8.9 mΩ @ V_GS = 10 V and 49.0 A continuous drain current at T_C = +25°C. It serves as a high-reliability power switch in automotive DC-DC converters and backlighting circuits.

For engineers reviewing the DMTH47M2LFVWQ-13 datasheet, DMTH47M2LFVWQ-13 pinout, DMTH47M2LFVWQ-13 application, or DMTH47M2LFVWQ-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and low Q_gd × R_DS(ON) figure-of-merit for efficient switching in thermally constrained automotive environments.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.3 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while its 4 Ω·cm² R_θJC supports high-power density mounting on exposed drain pads.

The device integrates a robust body diode with t_RR = 31.9 ns and Q_RR = 25.0 nC at dI/dt = 100 A/μs, enabling reliable synchronous rectification and freewheeling in buck and boost topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: PowerDI® 3333-8 (SWP), surface-mount, wettable flank, exposed drain pad for thermal and mechanical robustness. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H), with 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IXTP44N10P, DMTH47M2LFVWQ-13 uniquely balances AEC-Q101 compliance, wettable flank AOI readiness, and 8.9 mΩ R_DS(ON) in a 3.3 mm × 3.3 mm footprint-making it optimal for volume automotive ECUs where traceability, thermal density, and automated assembly are jointly critical.

Availability

DMTH47M2LFVWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit power management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH47M2LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions portfolio, engineered specifically for under-hood and dashboard-mounted applications demanding AEC-Q101 qualification, +175°C operation, and production-validated avalanche ruggedness.

FAQ

What is the maximum allowable gate-source voltage for DMTH47M2LFVWQ-13?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement and 0 V for turn-off, with transient overshoot suppressed below ±15 V using clamping or RC snubbing.

Does DMTH47M2LFVWQ-13 require a gate resistor for stability?

Yes-a series gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to Miller effect. The device's R_g = 2.06 Ω and C_iss = 881 pF make it susceptible to oscillation without controlled edge rates, especially in high-dV/dt environments like motor drives.

Can DMTH47M2LFVWQ-13 replace older DMP4010SK3-13 in existing designs?

No-DMP4010SK3-13 is a P-channel MOSFET in SOT-23 package with opposite polarity and vastly different R_DS(ON) (100 mΩ) and current rating (4.8 A). DMTH47M2LFVWQ-13 is N-channel, higher-current, and requires gate drive above source potential, making it incompatible without circuit topology changes.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad is internally connected to pin 8 (Drain) and must be soldered to a PCB copper pour designated as the high-side power rail. It is not insulated; connecting it to ground or source will cause immediate short-circuit failure. Thermal vias beneath the pad must connect only to the drain net.