Diodes Incorporated DMTH47M2LPSW-13

Overview

DMTH47M2LPSW from Diodes Incorporated is a 40V, N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 73.0A at TC = +25°C, R_DS(ON) = 7.3mΩ @ V_GS = 10V, and operation up to +175°C junction temperature. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters requiring low conduction loss and fast switching.

For engineers reviewing the DMTH47M2LPSW datasheet, DMTH47M2LPSW pinout, DMTH47M2LPSW application, or DMTH47M2LPSW equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and dual gate-voltage R_DS(ON) specification (7.3mΩ @ 10V / 12mΩ @ 4.5V) enabling compatibility with 5V and 3.3V gate drivers.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining controlled Q_g (12.6nC @ 10V) and low C_iss (891pF), supporting high-frequency hard-switching topologies. Its 2.2°C/W R_θJC enables high-power dissipation when mounted on thermally enhanced PCBs with exposed drain pad soldering.

The device features a body diode with t_RR = 56.6ns and Q_RR = 40.0nC under IF = 20A / di/dt = 100A/μs, making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI. Gate threshold voltage is tightly specified (1.2–2.3V), ensuring stable turn-on across automotive and industrial temperature ranges.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP, Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flanks for AOI-compatible solder joints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH47M2LPSWQ, the base part lacks AEC-Q101 certification but offers identical performance and cost advantage for non-automotive use; versus IPB070N15N5, it trades voltage headroom for superior thermal density, AOI compatibility, and smaller board area in 40V-class designs.

Availability

DMTH47M2LPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, extended temperature operation, and high-reliability power switching.

Supply support for DMTH47M2LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-current, high-temperature power conversion in space-constrained applications where thermal performance and manufacturability are critical.

FAQ

What is the maximum allowable gate-source voltage for DMTH47M2LPSW?

The absolute maximum V_GS is ±20V, as specified in the Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits should limit transient overshoot and ensure steady-state V_GS remains within −12V to +15V during normal switching, especially under high di/dt conditions.

Does DMTH47M2LPSW require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent oscillation, particularly given its low R_g (1.87Ω) and high C_iss. Typical values range from 2.2Ω to 10Ω depending on switching frequency and driver strength. Too low a value increases EMI and gate driver stress; too high slows switching and raises dynamic losses.

Can DMTH47M2LPSW be used in parallel configurations?

Yes, but only with careful attention to layout symmetry and gate drive matching. Its positive R_DS(ON) temperature coefficient (R_DS(ON) increases with T_J) supports current sharing, but mismatched parasitic inductance or gate resistance can cause imbalance. Use Kelvin source connections and individual gate resistors for each paralleled device.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to all drain pins (Pins 2–8) and forms the primary current and thermal path. It must be soldered to a large copper pour tied to the system's high-side power net. No insulation or isolation is required or provided between the pad and drain terminals.