Diodes Incorporated DMTH47M2LPSWQ-13

Overview

DMTH47M2LPSWQ from Diodes Incorporated is an AEC-Q101-qualified 40V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, rated for +175°C operation, with R_DS(ON) = 7.3 mΩ @ V_GS = 10 V and 73.0 A continuous drain current at T_C = +25°C. It delivers high-efficiency synchronous rectification in automotive DC-DC converters.

For engineers reviewing the DMTH47M2LPSWQ datasheet, DMTH47M2LPSWQ pinout, DMTH47M2LPSWQ application, or DMTH47M2LPSWQ equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low gate charge (Q_g = 12.6 nC @ 10 V), and AEC-Q101 qualification for under-hood power conversion.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-frequency automotive power stages. Its 2.2°C/W junction-to-case thermal resistance enables high-power operation on compact PCB copper pads without external heatsinks.

The device integrates a robust body diode with t_RR = 56.6 ns and Q_RR = 40.0 nC at I_F = 20 A, supporting efficient synchronous rectification and minimizing reverse recovery losses in buck and half-bridge topologies.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, exposed drain pad for thermal and electrical connection, wettable flank side walls for AOI compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IXTP44N10P, DMTH47M2LPSWQ uniquely combines AEC-Q101 qualification, +175°C rating, wettable flank, and 7.3 mΩ R_DS(ON) in a thermally efficient 5×6 mm footprint-making it the only drop-in solution for production automotive DC-DC modules requiring zero-defect SMT yield and under-hood thermal resilience.

Availability

DMTH47M2LPSWQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, synchronous rectifiers, and engine control unit power stages requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH47M2LPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant power conversion in harsh-temperature environments such as engine compartments and battery management systems.

FAQ

What is the maximum gate-source voltage rating for DMTH47M2LPSWQ?

The absolute maximum gate-source voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers, especially in high-dV/dt automotive environments where parasitic coupling can induce spikes above 15 V.

Does DMTH47M2LPSWQ require a gate resistor for stability?

Yes - a series gate resistor (typically 3–10 Ω) is required to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. The datasheet specifies t_D(ON), t_R, t_D(OFF), and t_F using R_g = 3 Ω; omitting it increases EMI and may cause false turn-on due to Miller effect in high-side configurations.

Can DMTH47M2LPSWQ be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (see Figure 6 and 7) ensures inherent current sharing across paralleled devices. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to prevent oscillation and unequal dynamic current distribution during switching transitions.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No - the exposed drain pad is electrically connected to all drain terminals and must be soldered directly to a dedicated, thermally optimized PCB copper pour tied to the system's high-side power rail. It is not isolated; using it as a thermal pad without electrical connection violates the internal structure and compromises both thermal performance and voltage isolation integrity.