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Diodes Incorporated DMTH47M2SPSW-13
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- Part No.:
- DMTH47M2SPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH47M2SPSW-13.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI506
- Quantity:
- Payment:
- Shipping:
Inventory:9,569
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Product details
Overview
DMTH47M2SPSW-13 from Diodes Incorporated is a 40V, 73A N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 5.8 mΩ (typ) @ VGS = 10V and 20A, optimized for high-frequency synchronous rectification in automotive DC-DC converters.
For engineers reviewing the DMTH47M2SPSW-13 datasheet, DMTH47M2SPSW-13 pinout, DMTH47M2SPSW-13 application, or DMTH47M2SPSW-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, low Ciss (897 pF), and thermal resistance RθJC = 2.2°C/W for high-power-density board-level thermal management.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching dynamics: tD(ON) = 5.4 ns, tR = 4.5 ns, Qg = 12.1 nC, and low reverse transfer capacitance (Crss = 12.4 pF), enabling efficient operation in hard-switched and resonant topologies above 500 kHz.
Its +175°C rated junction temperature, 100% UIS tested (IAS = 24.7 A, EAS = 30.5 mJ), and body diode tRR = 39.1 ns with QRR = 53.3 nC support reliable operation in high-ambient automotive engine-bay and industrial power supply applications without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum drain-source blocking voltage compatible with 12 V/24 V automotive systems and 48 V intermediate bus architectures. |
| RDS(ON) max | 7.5 mΩ @ VGS = 10 V, ID = 20 A - Enables <1.5 W conduction loss at 73 A continuous current when paralleled or used with heatsinking. |
| ID max (TC = 25°C) | 73 A - Continuous drain current rating based on thermal limit of exposed drain pad; supports high-current single-phase buck stages. |
| Qg | 12.1 nC - Low total gate charge reduces driver power demand and enables use with low-side gate drivers like ZXGD3003E6. |
| RθJC | 2.2 °C/W - Junction-to-case thermal resistance measured to soldered drain pad; allows direct thermal coupling to PCB copper or heatsink for high-power density designs. |
| tRR | 39.1 ns - Body diode reverse recovery time at IF = 20 A, di/dt = 100 A/μs; minimizes shoot-through risk and switching loss in synchronous rectifier mode. |
| Ciss | 897 pF - Input capacitance at VDS = 20 V; supports stable gate drive design with minimal Miller effect in high-side configurations. |
Pinout & Package
Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for automated optical inspection and solder joint reliability verification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | All eight pins are internally connected to the drain terminal and the large exposed bottom pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| Pin 9 (Source) | Source (S) | Single dedicated source terminal - used for Kelvin sensing or low-noise gate drive reference in precision current regulation. |
| Pin 10 (Gate) | Gate (G) | Isolated gate input - requires ≤ ±20 V drive; low Rg = 2.07 Ω supports fast edge rates without external gate resistor in most applications. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables deployment in under-hood automotive modules (e.g., ADAS ECUs, battery disconnect units) without thermal derating or forced cooling. |
| 100% production UIS testing | Guarantees avalanche ruggedness up to 24.7 A / 30.5 mJ per pulse - eliminates field failures due to inductive load transients in motor drives and solenoid control. |
| Wettable flank terminals | Facilitates AOI-compatible solder joint inspection on all side edges - critical for zero-defect manufacturing in automotive Tier-1 production lines. |
| Low Crss (12.4 pF) | Reduces Miller-induced turn-on risk during high dv/dt switching - improves stability in high-side half-bridge configurations with bootstrap gate drives. |
| RoHS 3 / Halogen-free / "Green" | Complies with automotive ELV Directive and JIG-002 requirements - qualified for use in vehicles sold in EU, China, and Japan markets. |
Applications
| Automotive DC-DC Converters | Synchronous Rectification |
|---|---|
|
Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in engine control units (ECUs) operating continuously at 105°C ambient. IC Role / Device Role / Timing Role: High-side synchronous FET in monolithic or discrete buck regulator; switches at 2 MHz with 50 ns dead-time. Use Value: 5.8 mΩ RDS(ON) reduces conduction loss by >35% vs. legacy 12 mΩ devices, enabling 95% efficiency at 20 A output. |
Use Scenario: Secondary-side rectification in isolated 48 V–12 V LLC resonant converter for server power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by transformer-coupled gate drive; operates in ZVS region. Use Value: 39.1 ns tRR and 53.3 nC QRR minimize reverse recovery loss and improve light-load efficiency by 1.2% over Si Schottky alternatives. |
| Industrial Motor Drives | High-Temperature Power Supplies |
|
Use Scenario: Half-bridge leg in 24 V brushless DC motor controller mounted inside sealed IP67-rated enclosure. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; driven by isolated gate driver with 10 ns propagation delay. Use Value: 100% UIS qualification ensures survival during 100 A short-circuit events lasting up to 10 µs - meets IEC 61800-5-1 fault tolerance requirements. |
Use Scenario: Primary-side switch in 400 W telecom rectifier operating in desert environments (TA = 85°C). IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter topology; switched at 300 kHz with active clamp. Use Value: +175°C rating allows full 73 A current capability without derating - eliminates need for parallel devices and reduces BOM count by 33%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP40N40L2 | RDS(ON) = 40 mΩ @ 10 V; TO-220 package; no wettable flank; RθJC = 1.5°C/W but larger footprint. | Limited to lower-current (<25 A) industrial SMPS where optical inspection is not required and heatsink mounting is feasible. | Select only if mechanical mounting constraints preclude surface-mount packages and thermal budget permits higher conduction loss. |
| STL135N4LF8AG | RDS(ON) = 1.35 mΩ @ 10 V; PowerFLAT 5x6 package; 175°C rated; but Ciss = 2,200 pF and Qg = 42 nC - slower switching. | Better for high-current, low-frequency (<200 kHz) applications like battery protection ICs where low RDS(ON) dominates over switching loss. | Prefer when minimizing conduction loss is primary goal and gate drive strength supports higher Qg; avoid in >500 kHz designs due to excessive drive loss. |
Compared with IXTP40N40L2 and STL135N4LF8AG, DMTH47M2SPSW-13 uniquely balances ultra-low RDS(ON), fast switching (Qg = 12.1 nC), wettable flank inspection, and +175°C rating in a compact surface-mount package - making it optimal for space-constrained, high-reliability automotive and industrial power stages.
Availability
DMTH47M2SPSW-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and high-temperature power supplies requiring stable component supply across extended product lifecycles.
Supply support for DMTH47M2SPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications demanding extended temperature operation and robust transient immunity.
FAQ
What is the maximum allowable gate-source voltage for DMTH47M2SPSW-13?
The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V for turn-on and –5 V to 0 V for turn-off, especially in high dv/dt environments.
Does DMTH47M2SPSW-13 require a gate resistor in typical applications?
A gate resistor is recommended to dampen ringing and control dV/dt, particularly in high-frequency (>1 MHz) or high-current (>30 A) applications. With Rg = 2.07 Ω intrinsic, a 2–10 Ω external resistor typically achieves optimal tradeoff between switching speed and EMI; values below 2 Ω increase risk of oscillation without improving performance.
How is thermal performance affected when the exposed drain pad is not soldered to PCB copper?
Without connection of the exposed drain pad to ≥1 in² of 2 oz copper, RθJA degrades from 45°C/W to >100°C/W, causing junction temperature to exceed +175°C at just 15 A. Full thermal performance requires soldering the entire pad area using IPC-7095-compliant reflow profile and thermal via array beneath the pad.
Is DMTH47M2SPSW-13 qualified to AEC-Q101 for automotive use?
Yes - Diodes Incorporated lists DMTH47M2SPSW-13 as AEC-Q101 qualified in its official product definitions page (https://www.diodes.com/quality/product-definitions/). It is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request for automotive OEM programs.
DMTH47M2SPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 897 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH47M2SPSW-13 FAQ
1.How can I place an order for DMTH47M2SPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH47M2SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH47M2SPSW-13 reliable?
The price and inventory of DMTH47M2SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH47M2SPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH47M2SPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH47M2SPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH47M2SPSW-13?
DMTH47M2SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH47M2SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH47M2SPSW-13?
For technical support, including DMTH47M2SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH47M2SPSW-13 requirements.
6.How does Aetrix verify that DMTH47M2SPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH47M2SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH47M2SPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH47M2SPSW-13?
All DMTH47M2SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH47M2SPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH47M2SPSW-13 part is unused and in its original packaging.
Return procedure for DMTH47M2SPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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