Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH48M3SFVW-13

Part No.:
DMTH48M3SFVW-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH48M3SFVW-13.pdf
Description:
MOSFET BVDSS: 31V~40V POWERDI333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,317

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH48M3SFVW-13 from Diodes Incorporated is a 40V, 52.4A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, optimized for high-efficiency DC-DC converters with RDS(ON) = 6.9 mΩ (typ) at VGS = 10V and rated for continuous operation up to +175°C junction temperature. It delivers robust unclamped inductive switching performance (EAS = 30.5 mJ) and features wettable flanks for automated optical inspection.

For engineers reviewing the DMTH48M3SFVW-13 datasheet, DMTH48M3SFVW-13 pinout, DMTH48M3SFVW-13 application, or DMTH48M3SFVW-13 equivalent, key selection criteria include its low RDS(ON) × QGD figure-of-merit, thermal capability at TC = +100°C (ID = 37.1 A), and suitability for space-constrained automotive and industrial power stages requiring high-reliability SMT mounting.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics: tD(ON) = 5.36 ns, tD(OFF) = 12.1 ns, and Qg = 12.1 nC at VDS = 20V. Its body diode exhibits tRR = 39.1 ns and QRR = 53.3 nC under IF = 20A, di/dt = 100 A/μs conditions.

The device is characterized for operation across –55°C to +175°C, with RDS(ON) normalized variation ≤1.4× over that range at VGS = 10V, ID = 20A. Thermal resistance RθJC = 4.09°C/W enables high-power dissipation when mounted on exposed drain pads with controlled solder thermal interface.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12–24V input DC-DC topologies.
RDS(ON) 6.9 mΩ (typ) @ VGS = 10V, ID = 20A - Directly determines conduction loss (PCOND ≈ I² × R) in high-current power stages.
ID (TC = +25°C) 52.4 A - Continuous drain current rating with case heatsinking; supports >50A peak-load buck converter phases.
Qg 12.1 nC - Total gate charge required to fully switch; sets minimum drive strength and impacts switching loss scaling.
EAS 30.5 mJ - Single-pulse avalanche energy rating; confirms ruggedness against inductive turn-off transients without external snubbers.
TJ max +175°C - Maximum junction temperature; enables operation in under-hood automotive or sealed industrial enclosures without derating.
RθJC 4.09°C/W - Junction-to-case thermal resistance; allows direct thermal modeling of die temperature rise above PCB copper pad temperature.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount plastic package with exposed drain pad for thermal and electrical connection. Wettable flank terminals enable automated optical inspection of solder fillets.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control terminal; requires ≥2.7V threshold to initiate conduction; driven by PWM controller with <2.07Ω gate resistance typical.
Pins 2, 3, 4, 5 (S) Source Common return path for load current; electrically tied to PCB ground plane; multiple pins reduce source inductance in high-di/dt applications.
Pins 6, 7, 8, D-pad (D) Drain Main power output node; connected to exposed copper pad on bottom for thermal conduction and low-inductance high-current routing.

Key Features

Feature Design Value
100% UIS tested Every unit validated for unclamped inductive switching up to 24.7A/30.5mJ - eliminates need for post-production reliability screening in critical power stages.
Wettable flank leads Side-terminal plating compatible with AOI systems - enables 100% automated solder-joint verification without X-ray.
QGD × RDS(ON) FOM 1.9 nC × 6.9 mΩ = 13.1 mΩ·nC - quantifies trade-off between switching speed and conduction loss; optimized for 300–1000 kHz DC-DC operation.
AEC-Q101 qualified variant available DMTH48M3SFVWQ listed separately - same die and package with full automotive qualification including HTGB, HTRB, and temperature cycling.
Green compound & lead-free UL 94V-0 mold compound with <900 ppm Br/Cl and <1000 ppm Sb - meets global environmental compliance without compromising thermal or mechanical performance.

Applications

Automotive DC-DC Converters Industrial Motor Drives

Use Scenario: 12V-to-5V/3.3V point-of-load conversion in engine control units (ECUs) and ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck topology; switches at 500 kHz with 100 ns dead-time control.

Use Value: 6.9 mΩ RDS(ON) reduces conduction loss by >35% vs. legacy 12 mΩ devices, enabling 95%+ efficiency at 25A load while staying within +175°C TJ limit.

Use Scenario: Half-bridge leg in 24V brushless DC motor drivers for HVAC blowers and factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling phase current commutation; handles repetitive 30A pulsed loads with 10 μs off-time.

Use Value: 30.5 mJ EAS rating ensures reliable operation during motor stall events without external clamping, reducing BOM count and board area.

Telecom Power Supplies Server VRMs

Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V intermediate bus converters for 5G base station radios.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode in forward converter secondary; driven by transformer-coupled gate signal.

Use Value: 0.9V VSD body diode forward voltage minimizes reverse recovery loss during light-load discontinuous conduction mode (DCM).

Use Scenario: High-current phase in multi-phase buck VRMs supplying CPU/GPU core voltage (0.8–1.2V @ up to 400A).

IC Role / Device Role / Timing Role: Power stage switch operating at 1 MHz with 30A per phase; thermally coupled to heatsink via exposed drain pad.

Use Value: RθJC = 4.09°C/W enables direct thermal path to heatsink, limiting ΔT to <15°C at 37.1A continuous, avoiding thermal throttling in dense server modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMTH48M3SFVQ-13 Same die and package; AEC-Q101 qualified with extended reliability testing (HTGB, HTRB, temperature cycling). Required for automotive production programs needing PPAP documentation and IATF 16949 traceability. Select when automotive qualification is mandatory; otherwise identical electrical and thermal behavior.
IPB180N04S4-02 40V, 180A rated, TO-263-7 package; RDS(ON) = 1.8 mΩ @ 10V but larger footprint and higher Qg = 63 nC. Better suited for single-phase high-current (>100A) industrial inverters where board space is less constrained. Choose only if >100A continuous current is needed and thermal design accommodates larger package; not drop-in compatible.

Compared with DMTH48M3SFVW-13, the Q101-qualified DMTH48M3SFVQ-13 adds automotive compliance overhead without altering performance, while IPB180N04S4-02 trades compactness and switching speed for raw current capacity-making the DMTH48M3SFVW-13 optimal for space-limited, high-frequency, thermally demanding 30–50A applications.

Availability

DMTH48M3SFVW-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for DMTH48M3SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for high-efficiency, high-temperature power conversion in automotive and industrial environments where reliability and thermal resilience are critical.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH48M3SFVW-13 supports 37.1 A continuous drain current when case temperature is maintained at +100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper thermal management via the exposed drain pad and adequate PCB copper area per Diodes' recommended layout guidelines.

Does this MOSFET require a gate driver for 500 kHz switching?

Yes - due to its 12.1 nC total gate charge and 2.07 Ω internal gate resistance, a dedicated gate driver capable of sourcing/sinking ≥2 A peak current is recommended to achieve clean 5–10 ns rise/fall times and minimize switching losses at 500 kHz in hard-switched topologies.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes - the PowerDI3333-8 package is qualified for standard lead-free reflow profiles (J-STD-020 Level 1), with peak temperature up to 260°C. Its moisture sensitivity level is MSL-1, eliminating bake requirements prior to assembly.

How does the wettable flank feature improve manufacturing yield?

The wettable flank design exposes solderable metal along the vertical side walls of each lead, enabling automated optical inspection (AOI) systems to verify solder fillet formation and coplanarity - reducing reliance on manual visual checks or costly X-ray inspection in high-volume SMT lines.

DMTH48M3SFVW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
14.6A (Ta), 52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
897 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2.82W (Ta), 36.6W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMTH48M3SFVW-13 FAQ

1.How can I place an order for DMTH48M3SFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH48M3SFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH48M3SFVW-13 reliable?

The price and inventory of DMTH48M3SFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH48M3SFVW-13 is usually 5 days.

3.What payment methods are accepted for DMTH48M3SFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH48M3SFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH48M3SFVW-13?

DMTH48M3SFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH48M3SFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH48M3SFVW-13?

For technical support, including DMTH48M3SFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH48M3SFVW-13 requirements.

6.How does Aetrix verify that DMTH48M3SFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH48M3SFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH48M3SFVW-13 meets industry standards.

7.What is the process for return or replacement of DMTH48M3SFVW-13?

All DMTH48M3SFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH48M3SFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH48M3SFVW-13 part is unused and in its original packaging.

Return procedure for DMTH48M3SFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH48M3SFVW-13 Tags

  • DMTH48M3SFVW-13
  • DMTH48M3SFVW-13 PDF
  • DMTH48M3SFVW-13 Datasheet
  • DMTH48M3SFVW-13 Specifications
  • DMTH48M3SFVW-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH48M3SFVW-13
  • Buy DMTH48M3SFVW-13
  • DMTH48M3SFVW-13 Price
  • DMTH48M3SFVW-13 Distributor
  • DMTH48M3SFVW-13 Supplier
  • DMTH48M3SFVW-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER