Diodes Incorporated DMTH48M3SFVWQ-13

Overview

DMTH48M3SFVWQ-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 40 V V_DSS, 8.9 mΩ R_DS(ON) @ 10 V V_GS, and 52.4 A continuous drain current at T_C = +25°C. It delivers robust unclamped inductive switching (UIS), wettable flank terminals for automated optical inspection, and operates up to +175°C junction temperature - deployed in automotive motor controls and DC-DC converters.

For engineers reviewing the DMTH48M3SFVWQ-13 datasheet, DMTH48M3SFVWQ-13 pinout, DMTH48M3SFVWQ-13 application, or DMTH48M3SFVWQ-13 equivalent, key selection criteria include its 4.09°C/W R_θJC, 12.1 nC total gate charge, AEC-Q101 qualification status, PPAP capability, and wettable flank package geometry for solder-joint reliability verification.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and high UIS ruggedness, with gate threshold voltage tightly distributed between 2.0 V and 4.0 V. Its dynamic parameters - including 12.1 nC Q_g, 1.9 nC Q_gd, and 530 pF C_oss - support fast, efficient switching in synchronous buck stages and H-bridge motor drivers.

The device integrates a body diode with 39.1 ns reverse recovery time and 53.3 nC Q_RR, enabling reliable freewheeling in hard-switched topologies. Thermal design is anchored by a 4.09°C/W junction-to-case resistance and 175°C maximum operating temperature, validated under IATF 16949 manufacturing conditions.

Key Specifications

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for AOI compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and IXTP50N10P, DMTH48M3SFVWQ-13 uniquely combines AEC-Q101 qualification, wettable flank geometry, and 4.09°C/W R_θJC in a 3.3 mm × 3.3 mm footprint - making it the only option supporting both zero-defect AOI and 175°C operation in space-constrained automotive power stages.

Availability

DMTH48M3SFVWQ-13 is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and electric power steering applications requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH48M3SFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' AEC-Q101-qualified PowerDI®3333-8 automotive portfolio, engineered specifically for high-current, high-temperature switching in engine control units, ADAS power supplies, and electrified chassis subsystems.

FAQ

What is the maximum allowable gate-source voltage for DMTH48M3SFVWQ-13?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum Ratings" table. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to ≤±15 V with transient suppression, especially in noisy automotive environments where load dump or inductive kickback may induce overshoot.

Does DMTH48M3SFVWQ-13 require a gate resistor for stability?

Yes - a gate resistor (typically 3–10 Ω) is required to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dv/dt coupling. The datasheet specifies t_D(ON) and t_R test conditions using R_g = 3 Ω; omitting it risks oscillation, increased switching losses, and potential device failure during high-frequency PWM operation.

Can DMTH48M3SFVWQ-13 be used in parallel configurations?

Parallel operation is feasible but requires careful layout: matched gate drive paths, symmetrical source routing, and thermal coupling to ensure current sharing. The device's positive R_DS(ON) temperature coefficient (Figure 7) aids inherent current balancing above 100°C, though mismatched parasitics can still cause imbalance - derating to ≤80% of total rated current is recommended.

Is the PowerDI3333-8/SWP package lead-free and RoHS compliant?

Yes - DMTH48M3SFVWQ-13 uses matte tin-annealed terminals over copper leadframe and fully complies with EU RoHS 2011/65/EU and RoHS 3 2015/863/EU directives. It is also halogen- and antimony-free ("Green"), with bromine and chlorine content each <900 ppm and antimony <1000 ppm, verified per Diodes Incorporated's quality definitions.