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Diodes Incorporated DMTH4M70SPGW-13
- Part No.:
- DMTH4M70SPGW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-1235
- Datasheet:
-
DMTH4M70SPGW-13.pdf
- Description:
- MOSFET BVDSS: 31V~40V POWERDI808
- Quantity:
- Payment:
- Shipping:
Inventory:8,769
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Product details
Overview
DMTH4M70SPGW-13 from Diodes Incorporated is a 40V, 460A N-channel enhancement-mode MOSFET in PowerDI8080-5 package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 0.54 mΩ (typ) at VGS = 10 V. It delivers ultra-low conduction loss and fast switching (tD(OFF) = 99.8 ns) for high-current DC-DC converters in automotive engine management systems.
For engineers reviewing the DMTH4M70SPGW-13 datasheet, DMTH4M70SPGW-13 pinout, DMTH4M70SPGW-13 application, or DMTH4M70SPGW-13 equivalent, key selection criteria include its 0.35 °C/W RθJC, 100% production-tested UIS robustness, wettable flank terminals for automated optical inspection, and compatibility with high-temperature under-hood environments.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while maintaining controlled gate charge (Qg = 117.1 nC) and minimized reverse transfer capacitance (Crss = 116 pF), enabling efficient hard-switching in synchronous buck stages. Its body diode exhibits tRR = 117.5 ns and QRR = 340.8 nC at 25 A/100 A/μs, supporting moderate-frequency freewheeling.
The device is thermally characterized with RθJC = 0.35 °C/W to the exposed drain pad, requiring direct thermal coupling to a heatsink or PCB copper plane. Its SOA is defined up to 1840 A pulsed (10 μs), limited by RDS(ON) and junction temperature cap of +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in 12 V/24 V automotive DC-DC stages. |
| RDS(ON) | 0.54 mΩ (typ) @ VGS = 10 V - Enables <1.5 W conduction loss at 460 A DC, critical for minimizing thermal stress in high-current power rails. |
| ID (TC = 25°C) | 460 A - Continuous drain current rating at case temperature 25°C; defines maximum steady-state current with adequate heatsinking. |
| Qg | 117.1 nC - Total gate charge required to fully switch; determines driver strength requirement and switching loss trade-off. |
| RθJC | 0.35 °C/W - Thermal resistance from junction to case (exposed drain); enables precise thermal modeling when mounted on copper thermal pad. |
| tD(OFF) | 99.8 ns - Turn-off delay time at VDD = 20 V, ID = 25 A, RG = 5 Ω; constrains minimum achievable switching frequency in hard-switched topologies. |
| EAS | 924.5 mJ - Single-pulse avalanche energy rating; confirms ruggedness against inductive load transients without external snubbers. |
Pinout & Package
Package: PowerDI®8080-5 - surface-mount, 5-terminal package with exposed drain pad (D) for thermal and electrical connection; features wettable flank side walls for automated optical solder-joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10 V drive for full enhancement; VGS(TH) = 2–4 V ensures reliable turn-on with standard logic-level drivers. |
| Pins 2,3,4 (S) | Source | Three parallel source terminals reduce package inductance and improve current sharing; referenced to system ground in low-side switch configuration. |
| Pin 5 / Exposed Pad (D) | Drain | Main power output terminal and thermal path; electrically connected to drain region; must be soldered to large copper area for thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C continuous operation | Enables deployment in engine bay locations without derating, eliminating need for additional thermal margin in under-hood power modules. |
| 100% production UIS tested | Guarantees avalanche ruggedness across every unit-critical for reliability in motor drive and solenoid control where inductive kickback is unavoidable. |
| Wettable flank terminals | Supports AOI-based solder-joint verification on SMT lines, reducing post-reflow inspection cost and improving yield in automotive-grade manufacturing. |
| Low Ciss / Crss ratio | Ciss = 10053 pF, Crss = 116 pF → Miller ratio ~0.011; suppresses dv/dt-induced false turn-on and improves gate drive stability. |
| Lead-free, halogen-free "Green" construction | Complies with RoHS 3 (2015/863/EU) and automotive environmental standards; eliminates brominated flame retardants (<900 ppm Br) and antimony compounds (<1000 ppm). |
Applications
| Engine Control Unit (ECU) High-Current Switching | Automotive Body Control Module (BCM) Load Driving |
|---|---|
|
Use Scenario: Switching 400 A battery-fed loads (e.g., fuel pump, cooling fan) in ECU power distribution units. IC Role / Device Role / Timing Role: High-side or low-side power switch handling continuous DC current with transient surge tolerance. Use Value: 0.54 mΩ RDS(ON) limits conduction loss to ≤0.86 W at 400 A, enabling compact thermal design without forced air cooling. |
Use Scenario: Driving multiple 12 V solenoids and relays in centralized BCMs for door locks, lighting, and HVAC actuators. IC Role / Device Role / Timing Role: Robust low-side switch managing pulsed inductive loads with integrated body-diode recovery (tRR = 117.5 ns). Use Value: 100% UIS qualification ensures survival during 1840 A inductive spikes, eliminating need for external TVS or clamping diodes. |
| 48 V–12 V Bidirectional DC-DC Converter Primary Side | High-Efficiency On-Board Charger (OBC) Output Stage |
|
Use Scenario: High-frequency synchronous rectification in 48 V–12 V buck converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side FET in synchronous buck topology operating at 200–500 kHz with 10 V gate drive. Use Value: Qg = 117.1 nC and fast tR/tF (39.7 ns / 49.0 ns) enable efficient switching with minimal overlap loss at 300 kHz. |
Use Scenario: Output stage MOSFET in multi-phase OBC DC-DC stages delivering >3 kW to 12 V battery systems. IC Role / Device Role / Timing Role: High-current, high-temperature power switch handling continuous 460 A with thermal derating to +175°C. Use Value: RθJC = 0.35 °C/W allows direct thermal interface to cold plate, sustaining >97% efficiency at full load without thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4M72SPGW-13 | Successor part with identical PowerDI8080-5 package; RDS(ON) improved to 0.52 mΩ (typ) at VGS = 10 V; same +175°C rating and UIS test coverage. | Drop-in replacement with marginal conduction loss reduction; recommended for new designs per Diodes' notice. | Select for new designs requiring latest revision and marginally lower RDS(ON); pin- and footprint-compatible. |
| IXTN460N04T4 | Trench MOSFET in TO-268 package; RDS(ON) = 0.65 mΩ @ 10 V; higher RθJC = 0.45 °C/W; no wettable flanks. | Requires through-hole or larger SMT footprint; lacks AOI-friendly terminals and fails to meet same thermal performance at 460 A. | Consider only if legacy TO-268 layout exists and thermal budget permits 0.1 °C/W higher junction-to-case resistance. |
Compared with DMTH4M70SPGW-13, the DMTH4M72SPGW-13 offers slightly better conduction efficiency and full backward compatibility, while the IXTN460N04T4 trades package flexibility and manufacturability for less optimal thermal metrics and no wettable flank support.
Availability
DMTH4M70SPGW-13 is available at Aetrix Electronics and suitable for automotive engine management systems, body control modules, and high-efficiency DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMTH4M70SPGW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
The DMTH4M70SPGW belongs to Diodes' Power MOSFET product line engineered specifically for high-current, high-temperature automotive power switching-emphasizing ruggedness, thermal performance, and AEC-Q101 compliance readiness.
FAQ
Is DMTH4M70SPGW-13 qualified to AEC-Q101?
No-the DMTH4M70SPGW-13 is not AEC-Q101 qualified. However, its automotive-compliant counterpart DMTH4M70SPGWQ is explicitly qualified per AEC-Q101 Rev D and shares identical electrical and thermal specifications. The -13 suffix denotes commercial-grade packaging and testing; use the Q-suffix version for automotive production.
What is the maximum safe operating current at TC = 100°C?
At case temperature TC = 100°C, the DMTH4M70SPGW-13 supports 325 A continuous drain current per datasheet absolute maximum ratings. This derating accounts for thermal resistance and junction temperature limits; actual usable current depends on PCB copper area, airflow, and ambient conditions.
Does this MOSFET require a gate resistor for stability?
Yes-a gate resistor (RG) is required to dampen ringing and control switching speed. The datasheet specifies tD(ON)/tD(OFF) test conditions using RG = 5 Ω. For hard-switched applications, typical values range from 2.2 Ω to 10 Ω depending on driver capability and EMI requirements.
Can DMTH4M70SPGW-13 be used in paralleled configurations?
Yes-its positive temperature coefficient of RDS(ON) (see Figure 6) enables inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to ensure balanced dynamic current distribution and prevent oscillation.
DMTH4M70SPGW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-1235
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 460A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 0.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 117.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10053 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.6W (Ta), 428W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI8080-5
DMTH4M70SPGW-13 FAQ
1.How can I place an order for DMTH4M70SPGW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH4M70SPGW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH4M70SPGW-13 reliable?
The price and inventory of DMTH4M70SPGW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH4M70SPGW-13 is usually 5 days.
3.What payment methods are accepted for DMTH4M70SPGW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH4M70SPGW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH4M70SPGW-13?
DMTH4M70SPGW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH4M70SPGW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH4M70SPGW-13?
For technical support, including DMTH4M70SPGW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH4M70SPGW-13 requirements.
6.How does Aetrix verify that DMTH4M70SPGW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH4M70SPGW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH4M70SPGW-13 meets industry standards.
7.What is the process for return or replacement of DMTH4M70SPGW-13?
All DMTH4M70SPGW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH4M70SPGW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH4M70SPGW-13 part is unused and in its original packaging.
Return procedure for DMTH4M70SPGW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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