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Diodes Incorporated DMTH6004LPS-13

Part No.:
DMTH6004LPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6004LPS-13.pdf
Description:
MOSFET N-CH 60V 22A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,494

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Product details

Overview

DMTH6004LPS from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 3.1 mΩ @ VGS = 10 V and 4.5 mΩ @ VGS = 4.5 V, designed for high-efficiency primary-side switching in isolated DC-DC converters.

For engineers reviewing the DMTH6004LPS datasheet, DMTH6004LPS pinout, DMTH6004LPS application, or DMTH6004LPS equivalent, this device is selected for high-current, high-temperature power stages where low conduction loss, robust UIS performance, and automotive-grade reliability are required.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and low gate charge (Qg = 78.3 nC @ 10 V), enabling high-frequency synchronous rectification and load switching with minimal switching losses. Its 100% production-tested UIS capability ensures survivability under inductive turn-off stress.

The device features an integrated body diode with tRR = 49.7 ns and QRR = 78.9 nC, supporting fast-recovery operation in hard-switched topologies. Thermal design is enabled by RθJC = 0.9 °C/W and an exposed drain pad compatible with direct PCB thermal vias.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Withstands up to 60 V drain-source blocking voltage without breakdown.
RDS(ON) @ 10 V3.1 mΩ max - Enables ≤3.1 W conduction loss at 100 A, critical for high-current primary switches.
RDS(ON) @ 4.5 V4.5 mΩ max - Supports logic-level gate drive in 5 V control systems without level-shifting.
Qg78.3 nC @ 10 V - Determines gate driver current requirement; enables efficient 100–500 kHz switching.
TJ max+175°C - Allows operation in under-hood or high-ambient industrial environments without derating.
EAS160 mJ - Specifies single-pulse avalanche energy handling, validating ruggedness in unclamped inductive loads.
ID @ TC = 25°C100 A - Continuous drain current rating defined at case temperature, not ambient-requires heatsink or copper plane.

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2, 3, 5, 6, 7, 8 all internally connected to drain), dual source terminals (pins 1 and 4), and single gate terminal (pin ? - see pin configuration).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (S)SourcePrimary source connection; electrically tied to pin 4; used for low-side sensing or Kelvin source routing.
Pin 2 (D)DrainOne of six parallel drain terminals; connects directly to exposed thermal pad for low-inductance, high-current path and heat dissipation.
Pin 3 (D)DrainRedundant drain connection enhancing current capacity and reducing package inductance in high-dI/dt applications.
Pin 4 (S)SourceSecondary source terminal; enables 4-wire Kelvin source connection to minimize gate drive loop inductance and improve stability.
Pin 5 (D)DrainDrain node shared with pins 2, 3, 6, 7, 8; forms low-impedance return path for high-frequency switching currents.
Pin 6 (D)DrainPart of multi-terminal drain structure that lowers effective RDS(ON) and improves thermal spreading into PCB.
Pin 7 (D)DrainDrain connection routed to exposed pad; contributes to <0.9 °C/W junction-to-case thermal resistance.
Pin 8 (D)DrainFinal drain terminal completing symmetric 6× drain layout-critical for minimizing current crowding in high-power DC-DC stages.
Pin ? (G)GateSingle gate input (not labeled on top view but confirmed as pin between S1 and D2 in standard PowerDI5060-8 layout); requires <20 V absolute max gate-source voltage.

Key Features

FeatureDesign Value
+175°C rated junction temperatureEnables reliable operation in automotive engine compartments and industrial motor drives without thermal derating.
100% production UIS testedGuarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external snubbers in flyback/LLC primary switches.
Low Qg (78.3 nC @ 10 V)Reduces gate driver power consumption and allows use of smaller, lower-cost drivers in high-frequency SMPS designs.
RoHS-compliant, halogen-free "Green" constructionMeets automotive and industrial environmental compliance requirements (Br+Cl <1500 ppm, Sb <1000 ppm) without sacrificing thermal or electrical performance.
PowerDI5060-8 package with exposed drain padDelivers 138 W power dissipation capability at TC = 25°C and supports >100 A continuous current with proper PCB copper area.

Applications

Isolated DC-DC Primary SwitchSynchronous Rectifier

Use Scenario: High-efficiency 60 V input telecom or server PSU using active clamp forward or half-bridge topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer during main PWM phase.

Use Value: 3.1 mΩ RDS(ON) reduces conduction loss by >40% vs. comparable 5 mΩ MOSFETs at 80 A, improving full-load efficiency by ~0.8%.

Use Scenario: Secondary-side rectification in 12 V output LLC resonant converter for data center PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by transformer-coupled or controller-synchronized gate signal.

Use Value: 49.7 ns body diode tRR minimizes reverse recovery loss; low Qg enables clean turn-on timing alignment with zero-voltage switching transitions.

High-Temperature Load SwitchAutomotive Body Control Module

Use Scenario: 48 V battery-powered industrial actuator requiring hot-swap protection and overcurrent shutdown.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing and thermal foldback.

Use Value: +175°C rating permits placement near motors or power electronics without external heatsink; 100 A rating supports peak inrush currents up to 400 A (10 µs pulse).

Use Scenario: Front-end power distribution in automotive BCM managing headlight, HVAC, and seat control loads.

IC Role / Device Role / Timing Role: Protected high-side switch implementing load dump and short-circuit protection per ISO 7637-2.

Use Value: AEC-Q200-qualified variant (DMTH6004LPSQ) shares identical RDS(ON), thermal, and UIS specs-enabling drop-in qualification for safety-critical modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTP100N065T2RDS(ON) = 4.2 mΩ @ 10 V; TO-220 package; RθJA = 40 °C/W (with heatsink)Requires mechanical heatsink; unsuitable for ultra-thin or high-density layoutsSelect when board space allows discrete heatsinking and cost sensitivity outweighs thermal density needs.
STL220N6F7RDS(ON) = 2.2 mΩ @ 10 V; PowerFLAT 5x6 package; no Kelvin source pinsLacks dual-source terminals-limits gate loop optimization in >300 kHz designsSelect when lowest possible RDS(ON) is prioritized and gate drive layout is less sensitive to parasitic inductance.

Compared with IXTP100N065T2 and STL220N6F7, DMTH6004LPS uniquely combines ultra-low RDS(ON), Kelvin source capability, +175°C rating, and surface-mount thermal performance-making it optimal for compact, high-reliability, high-temperature power stages where both conduction and switching losses must be minimized simultaneously.

Availability

DMTH6004LPS is available at Aetrix Electronics and suitable for isolated DC-DC converters, synchronous rectifiers, and high-temperature load switches requiring stable component supply across automotive, industrial, and telecom production programs.

Supply support for DMTH6004LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-temperature power conversion applications where low RDS(ON), rugged avalanche performance, and AEC-Q200 compatibility are essential.

FAQ

What is the maximum continuous drain current at TC = 100°C?

The DMTH6004LPS supports 100 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥1 inch² of 2 oz copper connected to the exposed drain pad and adequate airflow or heatsinking to maintain case temperature at or below 100°C.

Does DMTH6004LPS have a Kelvin source configuration?

Yes-the PowerDI5060-8 package provides two dedicated source terminals (pins 1 and 4), enabling true Kelvin source sensing. This allows separation of high-current source return from gate drive reference, reducing gate loop inductance and improving switching stability in high-dI/dt applications such as LLC resonant converters.

Is the body diode suitable for synchronous rectification without external control?

No-the internal body diode is not intended for autonomous synchronous rectification. It is optimized for reverse recovery (tRR = 49.7 ns, QRR = 78.9 nC) but requires precise external gate timing control to avoid shoot-through. For synchronous rectification, the gate must be actively driven with complementary PWM signals referenced to the source.

How does the UIS test impact real-world reliability in flyback converters?

The 100% production UIS test subjects each unit to 40 A avalanche current and 160 mJ energy at L = 0.2 mH-directly simulating worst-case unclamped inductive turn-off in flyback primary switches. Units passing this test demonstrate proven robustness against voltage overshoot during MOSFET turn-off, reducing field failure risk in poorly snubbed or dynamically loaded flyback designs.

DMTH6004LPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
96.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4515 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.6W (Ta), 138W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH6004LPS-13 FAQ

1.How can I place an order for DMTH6004LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6004LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6004LPS-13 reliable?

The price and inventory of DMTH6004LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6004LPS-13 is usually 5 days.

3.What payment methods are accepted for DMTH6004LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6004LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6004LPS-13?

DMTH6004LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6004LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6004LPS-13?

For technical support, including DMTH6004LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6004LPS-13 requirements.

6.How does Aetrix verify that DMTH6004LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6004LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6004LPS-13 meets industry standards.

7.What is the process for return or replacement of DMTH6004LPS-13?

All DMTH6004LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6004LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6004LPS-13 part is unused and in its original packaging.

Return procedure for DMTH6004LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6004LPS-13 Tags

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