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Diodes Incorporated DMTH6004LPSQ-13
- Part No.:
- DMTH6004LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6004LPSQ-13.pdf
- Description:
- MOSFET N-CH 60V 100A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,925
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Product details
Overview
DMTH6004LPSQ-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 3.1mΩ RDS(ON) at VGS = 10V and 4.5mΩ at VGS = 4.5V, with 78.3nC total gate charge and 100% production-tested UIS robustness-designed for primary switches in isolated DC-DC converters and synchronous rectifiers in automotive power systems.
For engineers reviewing the DMTH6004LPSQ-13 datasheet, DMTH6004LPSQ-13 pinout, DMTH6004LPSQ-13 application, or DMTH6004LPSQ-13 equivalent, key selection criteria include its 0.9°C/W RθJC, 160mJ EAS, AEC-Q101 qualification, PPAP capability, and thermal performance up to +175°C junction temperature in high-reliability automotive power stages.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-current, high-temperature automotive power conversion. Its 100% UIS testing at 40A/160mJ ensures ruggedness against inductive energy spikes during load dump or fault conditions.
The device integrates an intrinsic body diode with 1.3V forward voltage at 25A and 49.7ns reverse recovery time, enabling efficient synchronous rectification without external Schottky diodes. Its gate threshold voltage (1–3V) and low Qg/Qgd ratio support stable PWM control under wide temperature and supply-voltage variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands up to 60V drain-source blocking voltage before avalanche onset, suitable for 48V automotive bus and industrial DC-DC inputs. |
| RDS(ON) | 3.1mΩ @ VGS=10V - Enables <1.6W conduction loss at 100A, critical for minimizing thermal stress in compact power modules. |
| ID (TC=25°C) | 100A - Continuous current rating limited by package thermal path, not die, supporting high-power load switching. |
| Qg | 78.3nC @ VGS=10V - Determines gate drive power requirement and switching speed; enables <100ns turn-on delay with 3.5Ω gate resistor. |
| EAS | 160mJ - Energy-handling capability during unclamped inductive switching, verified per JEDEC JESD24-1, ensuring reliability in flyback and LLC resonant topologies. |
| TJ max | +175°C - Maximum junction temperature rating, validated for under-hood automotive environments and extended-life industrial motor drives. |
| RθJC | 0.9°C/W - Thermal resistance from junction to case, enabling direct heatsink mounting for >130W dissipation at ΔT=125°C. |
Pinout & Package
Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low-inductance, high-current routing and efficient heat transfer to PCB copper or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Green) | Source | Primary current return path; tied to PCB ground plane for low-impedance loop in high-di/dt applications. |
| 2, 3, 4, 5, 6, 7 | Drain | Parallel-connected drain terminals forming low-resistance, low-inductance high-side power path; soldered to large copper pour. |
| 8 | Gate | Control input requiring <78.3nC charge; routed with controlled impedance to minimize ringing and EMI in 100kHz–1MHz switching. |
| Exposed Pad | Drain | Thermal and electrical connection to drain; must be fully soldered to inner-layer thermal vias for RθJC = 0.9°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF16949 manufacturing, and zero-defect screening protocols. |
| 100% UIS tested in production | Every unit subjected to 40A/0.2mH unclamped inductive switching, eliminating latent failure modes in real-world load-dump events. |
| Low RDS(ON) at 4.5V gate drive | 4.5mΩ @ VGS=4.5V enables compatibility with 5V logic-level controllers and improves efficiency in 12V/24V auxiliary supplies. |
| Lead-free, halogen-free "Green" construction | Meets RoHS 3 (2015/863/EU), contains <900ppm Br+Cl and <1000ppm Sb, compliant with automotive environmental directives. |
| Optimized dynamic parameters | Qgd/Qg = 26% and Coss = 1306pF support ZVS operation in resonant converters while limiting Miller-induced shoot-through risk. |
Applications
| Primary Switch in Isolated DC-DC | Synchronous Rectifier |
|---|---|
Use Scenario: High-efficiency 48V-to-12V bidirectional DC-DC converter in EV battery management systems. IC Role / Device Role / Timing Role: High-side primary switch operating at 200–500kHz, handling peak currents >80A with minimal conduction loss. Use Value: 3.1mΩ RDS(ON) reduces conduction loss by >35% vs. comparable 5mΩ MOSFETs, improving system efficiency from 92% to 94.5% at 5kW output. | Use Scenario: Secondary-side rectification in 1kW server PSU LLC resonant converter. IC Role / Device Role / Timing Role: Low-VF synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: 1.3V VSD and 49.7ns tRR enable >98% rectifier efficiency at 25A, reducing secondary-side thermal load by 4.2W vs. discrete diode solution. |
| Automotive Load Switch | Industrial Motor Drive Half-Bridge |
Use Scenario: 48V battery disconnect switch in ADAS domain controller with overcurrent and thermal shutdown. IC Role / Device Role / Timing Role: Single-pole load switch controlling power to radar processor module, with fast turn-off (<100ns) for fault isolation. Use Value: 100% UIS rating and +175°C TJ ensure reliable operation during hot-swap events and under-hood ambient temperatures up to +125°C. | Use Scenario: High-current half-bridge leg in 3-phase BLDC driver for HVAC compressor in commercial refrigeration. IC Role / Device Role / Timing Role: Low-side switching element in 20kHz PWM-driven inverter stage, conducting continuous 60A with forced air cooling. Use Value: 0.9°C/W RθJC allows direct heatsink mounting, maintaining TJ < 150°C at 138W dissipation-enabling 20% higher power density vs. TO-263 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60V, 220A, 1.8mΩ @ 10V, PowerFLAT 5x6 package, RθJC = 0.5°C/W, no AEC-Q101 listing | Higher current rating but lacks PPAP documentation and automotive qualification evidence | Select only for non-automotive industrial applications where AEC compliance is not required. |
| IPB60R045CFD7 | 600V, 45mΩ, TO-220FP package, 175°C rated, AEC-Q101 qualified, but 10× higher RDS(ON) | Designed for 400V+ mains-input PFC, unsuitable for 48V/100A low-loss switching | Not recommended for this application due to excessive conduction loss and incompatible voltage class. |
Compared with STL220N6F7AG and IPB60R045CFD7, DMTH6004LPSQ-13 uniquely balances AEC-Q101 compliance, 3.1mΩ on-resistance, 100A current capability, and 0.9°C/W thermal resistance in a surface-mount package-making it the only qualified choice for space-constrained, high-reliability 48V automotive power stages.
Availability
DMTH6004LPSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, synchronous rectifiers, and high-temperature load switches requiring stable component supply across multi-year production cycles.
Supply support for DMTH6004LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for automotive, industrial, computing, and consumer markets, with design centers across Asia, Europe, and the US.
This part belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability power conversion in AEC-Q101-compliant vehicle subsystems-from ADAS and infotainment to 48V mild-hybrid architectures.
FAQ
What is the maximum continuous drain current at TC = +100°C?
The DMTH6004LPSQ-13 maintains 100A continuous drain current at TC = +100°C, as confirmed in the Absolute Maximum Ratings table (Note 7). This reflects its package-limited current capability rather than die limitation, enabled by the PowerDI5060-8's low RθJC of 0.9°C/W and robust copper leadframe construction.
Is the body diode suitable for synchronous rectification without external drivers?
Yes-the intrinsic body diode has 1.3V forward voltage at 25A and 49.7ns reverse recovery time, verified in Electrical Characteristics (page 3). When used with active gate control, it supports efficient synchronous rectification in LLC and phase-shifted full-bridge topologies without requiring external Schottky diodes or complex timing compensation.
Does this MOSFET require special PCB layout considerations for thermal performance?
Yes-the exposed drain pad must be fully soldered to a minimum 1-inch² copper area with ≥6 thermal vias (0.3mm diameter, 0.8mm pitch) connecting to inner ground/power planes. Per Figure 7 and Thermal Characteristics, this layout achieves the specified 0.9°C/W RθJC; insufficient copper or via count increases junction temperature by >25°C at 100A.
How does the 100% UIS test impact field reliability in automotive applications?
Each unit undergoes JEDEC JESD24-1-compliant unclamped inductive switching at 40A/0.2mH (160mJ), verifying robustness against real-world transients like load dump and relay bounce. This eliminates latent parametric shifts and bond-wire failures that cause early-life field returns-directly supporting Diodes' PPAP submission and zero-defect automotive quality targets.
DMTH6004LPSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47.4 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4515 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.6W (Ta), 138W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH6004LPSQ-13 FAQ
1.How can I place an order for DMTH6004LPSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6004LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6004LPSQ-13 reliable?
The price and inventory of DMTH6004LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6004LPSQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH6004LPSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6004LPSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6004LPSQ-13?
DMTH6004LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6004LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6004LPSQ-13?
For technical support, including DMTH6004LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6004LPSQ-13 requirements.
6.How does Aetrix verify that DMTH6004LPSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6004LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6004LPSQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH6004LPSQ-13?
All DMTH6004LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6004LPSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6004LPSQ-13 part is unused and in its original packaging.
Return procedure for DMTH6004LPSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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