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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH6004SCT

Name: DMTH6004SCT
Brand: Diodes Incorporated
SKU: DMTH6004SCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH6004SCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMTH6004SCT.pdf

Description:: MOSFET N-CH 60V 100A TO220-3

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Inventory:5,906

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Product details

Overview

DMTH6004SCT from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in TO220AB package, featuring 3.65 mΩ R_DS(ON) at V_GS = 10 V, rated for continuous operation up to +175°C, and qualified for automotive body control and engine management systems.

For engineers reviewing the DMTH6004SCT datasheet, DMTH6004SCT pinout, DMTH6004SCT application, or DMTH6004SCT equivalent, key selection criteria include its 100% production-tested UIS robustness, low C_iss (4556 pF), 95.4 nC total gate charge, and thermal resistance R_θJC of 1.1°C/W for high-power DC-DC converter designs.

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2–4 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while its 1.1°C/W junction-to-case thermal resistance supports direct mounting to heatsinks in high-ambient environments.

The device integrates a robust intrinsic body diode with 1.3 V forward voltage at 100 A and 50.5 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and motor drive half-bridges without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial power rails
R_DS(ON)	3.65 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 100 A, critical for thermally constrained DC-DC stages
I_D (T_C = 25°C)	100 A - Package-limited continuous current rating under infinite heatsink conditions
E_AS	200 mJ - Energy-handling capability during unclamped inductive switching, verified per production test
C_iss	4556 pF - Input capacitance defining gate drive strength requirement and switching speed trade-off
Q_G	95.4 nC - Total gate charge determining driver IC sizing and turn-on energy consumption
T_J max	+175°C - Extended junction temperature rating enabling operation in under-hood automotive locations

Pinout & Package

TO220AB package with isolated tab (drain-connected), 3-terminal configuration: Drain (Tab), Source (Pin 1), Gate (Pin 2). Mounting requires electrically isolated heatsink interface due to drain-integrated metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main high-current drain path and thermal interface	Electrically connected to drain; must be isolated from chassis/heatsink unless system design permits common-drain topology
Pin 1	Source	Low-side return node; connects to ground or low-side switch node in half-bridge configurations
Pin 2	Gate	Control input requiring 10 V drive for full enhancement; sensitive to ESD and ringing due to 0.7 Ω gate resistance

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness up to 45 A and 200 mJ without derating, eliminating need for external snubbers in inductive load switching
+175°C operating junction temperature	Supports placement in high-ambient zones (e.g., engine compartments) without thermal throttling or derating
Low C_iss/C_oss ratio (4556/1383 pF)	Reduces Miller effect and improves controllability during high-dV/dt transitions in synchronous rectifiers
Lead-free, halogen- and antimony-free "Green" construction	Meets RoHS 3 (2015/863/EU) and automotive change-control requirements including IATF 16949 manufacturing
Matte tin-plated copper leadframe	Ensures MIL-STD-202-compliant solderability and long-term intermetallic stability under thermal cycling

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems with 12 V battery supply and PWM-controlled pulse widths down to 100 µs.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation; handles repetitive 100 A peak currents with <10 ns turn-off fall time.

Use Value: 1.1°C/W R_θJC enables direct heatsink mounting without thermal interface pads, reducing system BOM count and improving transient thermal response.

Use Scenario: Low-side load switch for HVAC blower motors and seat heater circuits in 24 V commercial vehicle platforms.

IC Role / Device Role / Timing Role: Robust on/off power controller with integrated body diode handling inductive kickback during abrupt shutdown.

Use Value: 200 mJ E_AS rating eliminates need for external TVS or flyback diodes, simplifying PCB layout and improving reliability over 15-year vehicle lifetime.

DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side synchronous rectifier in 60 V input, 12 V output isolated buck-boost converters for telecom power shelves.

IC Role / Device Role / Timing Role: High-efficiency power stage switch operating at 200 kHz with 95.4 nC Q_G demanding low-impedance gate drive.

Use Value: 3.65 mΩ R_DS(ON) reduces conduction loss to <3.7 W at 100 A, enabling >96% efficiency at full load without forced air cooling.

Use Scenario: Half-bridge leg in 48 V BLDC motor controllers for automated guided vehicles (AGVs), switching at 10–50 kHz with 100 A phase current.

IC Role / Device Role / Timing Role: Low-side switching element with fast 17.6 ns t_F and 50.5 ns t_RR minimizing dead-time losses and shoot-through risk.

Use Value: 175°C T_J rating allows sustained operation at 105°C ambient with 70°C temperature rise margin, avoiding thermal shutdown during continuous duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(ON) = 2.2 mΩ @ 10 V; TO220FP package; lower R_θJC (0.9°C/W); no production UIS test data published	Better conduction efficiency but higher gate charge (120 nC); less validated for automotive inductive switching stress	Select when thermal budget is tighter than gate drive capability; verify avalanche performance via application testing
IXFH100N60X3	600 V rating; 100 A; R_DS(ON) = 6.2 mΩ @ 10 V; TO247 package; higher C_iss (5200 pF)	Designed for higher-voltage PFC and industrial inverters; unsuitable for 12/24 V automotive due to excessive R_DS(ON)	Only consider if system requires 600 V blocking; otherwise avoid due to 70% higher conduction loss at 100 A

Compared with STL220N6F7 and IXFH100N60X3, DMTH6004SCT delivers optimal balance of low R_DS(ON), production-validated UIS robustness, and automotive-grade thermal endurance-making it preferred for 60 V, high-reliability automotive and industrial switching where both efficiency and ruggedness are mandatory.

Availability

DMTH6004SCT is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply across extended temperature and high-reliability automotive programs.

Supply support for DMTH6004SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-temperature, high-current automotive subsystems such as engine control units, lighting, and power distribution modules.

FAQ

Is DMTH6004SCT AEC-Q101 qualified?

Yes, DMTH6004SCT is AEC-Q101 qualified for discrete semiconductors. It undergoes stress testing including HTGB, HTRB, and UIS per AEC-Q101 Rev D, and is manufactured in IATF 16949-certified facilities. Full qualification documentation is available upon request through Diodes' automotive support team.

What is the maximum recommended PCB pad size for TO220AB thermal dissipation?

The datasheet specifies minimum recommended pad layout on FR-4 for R_θJA = 52.8°C/W: 1.5 inch² (968 mm²) copper area with 2 oz. thickness and thermal vias to inner layers. For infinite heatsink operation (R_θJC = 1.1°C/W), no PCB copper area is required-the tab must be mounted directly to an externally heatsinked surface with thermal interface material.

Can DMTH6004SCT be used in parallel configurations?

Yes, DMTH6004SCT supports paralleling due to its positive temperature coefficient of R_DS(ON) (normalized resistance increases with junction temperature), which promotes current sharing. Designers must match gate drive loop inductance and use individual gate resistors (≥5 Ω) to suppress oscillation; layout symmetry is critical for balanced dynamic current distribution.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes-the intrinsic body diode is characterized for 100 A continuous forward current at T_C = 25°C and exhibits 1.3 V V_SD at 100 A. Its 50.5 ns t_RR and 80.8 nC Q_RR enable reliable operation in CCM synchronous buck converters up to 200 kHz, provided gate timing avoids cross-conduction and thermal limits are observed.

DMTH6004SCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.65mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4556 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMTH6004SCT FAQ

1.How can I place an order for DMTH6004SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6004SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6004SCT reliable?

The price and inventory of DMTH6004SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6004SCT is usually 5 days.

3.What payment methods are accepted for DMTH6004SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6004SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6004SCT?

DMTH6004SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6004SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6004SCT?

For technical support, including DMTH6004SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6004SCT requirements.

6.How does Aetrix verify that DMTH6004SCT is sourced from the original manufacturer or authorized distributors?

All DMTH6004SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6004SCT meets industry standards.

7.What is the process for return or replacement of DMTH6004SCT?

All DMTH6004SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6004SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6004SCT part is unused and in its original packaging.

Return procedure for DMTH6004SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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