Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH6004SK3Q-13

Part No.:
DMTH6004SK3Q-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMTH6004SK3Q-13.pdf
Description:
MOSFET N-CH 60V 100A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,850

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH6004SK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 60V VDSS, 3.8 mΩ RDS(ON) @ 10VGS, 95.4 nC QG, and continuous 100A drain current at TC = +25°C. It operates up to +175°C junction temperature and supports automotive engine management, body control, DC-DC converters, and motor control.

For engineers reviewing the DMTH6004SK3Q-13 datasheet, DMTH6004SK3Q-13 pinout, DMTH6004SK3Q-13 application, or DMTH6004SK3Q-13 equivalent, key selection criteria include its 0.8°C/W RθJC, 100% unclamped inductive switching rating, low gate charge for high-frequency switching, and PPAP-capable automotive qualification.

Technical Context

This MOSFET uses a trench-gate silicon process optimized for low conduction and switching losses in high-current automotive power stages. Its 175°C-rated silicon die and exposed-drain thermal pad enable robust operation under sustained load in constrained thermal environments.

The device features tightly controlled VGS(TH) (2–4 V), low Ciss (4556 pF) and Crss (105.2 pF), and fast switching times (tD(ON) = 13.2 ns, tF = 12 ns), supporting efficient synchronous rectification and PWM-driven motor phases.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands up to 60V drain-source blocking voltage without breakdown, suitable for 48V automotive systems and industrial 24–48V rails.
RDS(ON) 3.8 mΩ @ 10VGS, 90A - Enables <1.5W conduction loss at 100A, reducing heatsink requirements in high-current DC-DC stages.
QG 95.4 nC - Low total gate charge allows fast turn-on with moderate gate drive strength, minimizing switching loss in 100–500 kHz applications.
ID (max) 100 A @ TC = +25°C - Supports high-current loads such as starter relays, HVAC blowers, and EPS motor phases when properly heatsinked.
TJ max +175°C - Rated for under-hood environments where ambient temperatures exceed 125°C, ensuring reliability in engine bay placements.
EAS 200 mJ - Energy-handling capability during single-pulse avalanche events improves fault tolerance in inductive load switching.
RθJC 0.8°C/W - High thermal conductivity from junction to case enables direct mounting to metal-core PCBs or heatsinks for efficient power dissipation.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, RoHS-compliant, halogen/antimony-free.

Pin/Terminal Circuit Role Design Meaning
D (Drain) Main power output / high-side switch node Connected to exposed copper pad on bottom of package; primary thermal path and high-current return path.
G (Gate) Control input Receives 10V logic-level drive; threshold voltage range (2–4 V) ensures compatibility with standard microcontroller GPIO or gate drivers.
S (Source) Power reference / low-side return Provides ground reference for gate drive; source inductance must be minimized to avoid shoot-through in half-bridge configurations.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and documented failure mode analysis.
100% unclamped inductive switching (UIS) Guaranteed energy rating (EAS = 200 mJ) eliminates need for external snubbers in relay replacement or solenoid driving.
Low RDS(ON) + low QG Simultaneous reduction of conduction loss (I²R) and switching loss (½ × QG × VGS × f), enabling >95% efficiency in 48V buck converters.
Exposed drain thermal pad Enables direct thermal coupling to PCB copper pour or heatsink, achieving 0.8°C/W RθJC without solder paste voiding concerns.
Green, RoHS-compliant construction Meets EU RoHS 3 (2015/863/EU), halogen-free (<900 ppm Br/Cl, <1000 ppm Sb), UL 94V-0 flammability rating.

Applications

Engine Management Systems Body Control Modules

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling pulsed 12–48V loads with precise 1–10 ms on-time and fast turn-off.

Use Value: 175°C rating ensures stable operation near hot engine blocks; 100% UIS withstands coil flyback energy without clamping diodes.

Use Scenario: Load switching for interior lighting, window lift motors, and seat position actuators.

IC Role / Device Role / Timing Role: Low-side or high-side driver delivering up to 100A peak current with PWM dimming or soft-start control.

Use Value: 3.8 mΩ RDS(ON) minimizes self-heating during extended duty cycles; RoHS/Green compliance meets OEM environmental mandates.

48V DC-DC Converters Electric Power Steering (EPS)

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V buck converters for ADAS and infotainment subsystems.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–400 kHz with tight gate timing control.

Use Value: 95.4 nC QG enables low gate drive loss; low Crss (105.2 pF) reduces Miller-induced shoot-through risk.

Use Scenario: H-bridge phase leg in brushless DC motor drivers for torque-assist steering systems.

IC Role / Device Role / Timing Role: Half-bridge switch handling bidirectional 60–80A motor currents with regenerative braking capability.

Use Value: 60V VDSS safely covers battery transients up to ISO 7637-2 Pulse 5a; 150A pulsed rating accommodates stall conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60V, 2.2 mΩ @ 10VGS, 130A, TO263 package, RθJC = 0.5°C/W Higher current rating and lower RDS(ON), but larger footprint and higher gate charge (125 nC) Select when thermal budget is tighter and board space permits TO263; verify gate driver slew rate compatibility.
IPB033N06N3 60V, 3.3 mΩ @ 10VGS, 90A, TO263, RθJC = 0.6°C/W, AEC-Q101 qualified Similar RDS(ON) and rating, but higher price and no documented UIS rating Prefer for cost-sensitive designs where avalanche ruggedness is not required; confirm ECU-level surge immunity testing coverage.

Compared with STL220N6F7 and IPB033N06N3, DMTH6004SK3Q-13 offers optimal balance of low gate charge (95.4 nC), proven UIS ruggedness, and TO252 footprint compatibility-making it ideal for space-constrained, thermally demanding automotive modules where gate drive efficiency and transient robustness are critical.

Availability

DMTH6004SK3Q-13 is available at Aetrix Electronics and suitable for engine control units, body electronics modules, and 48V DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for DMTH6004SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101 compliance, high-temperature operation, and robustness in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH6004SK3Q-13 supports 75A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO252 package and must be validated against actual PCB layout and heatsinking in the target application.

Does this MOSFET require a gate resistor for safe operation in a half-bridge configuration?

Yes-a gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's low gate resistance (0.66 Ω) and 105.2 pF Crss make it susceptible to Miller-induced turn-on without proper gate drive impedance and layout control.

Is the body diode suitable for synchronous rectification in a buck converter?

The body diode has VSD = 0.9–1.2 V at 20A and tRR = 50.5 ns, making it usable for low-frequency (<100 kHz) freewheeling, but not optimal for high-frequency synchronous rectification. External Schottky or FET-based synchronous control is preferred above 200 kHz.

Can DMTH6004SK3Q-13 replace older DPAK MOSFETs like DMTH6004LK3Q in existing designs?

Yes-both share identical TO252 package, pinout, and thermal footprint. DMTH6004SK3Q-13 offers improved RDS(ON) (3.8 mΩ vs. 4.2 mΩ) and updated AEC-Q101 revision compliance, enabling drop-in efficiency gains without layout changes.

DMTH6004SK3Q-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4556 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.9W (Ta), 180W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMTH6004SK3Q-13 FAQ

1.How can I place an order for DMTH6004SK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6004SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6004SK3Q-13 reliable?

The price and inventory of DMTH6004SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6004SK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMTH6004SK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6004SK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6004SK3Q-13?

DMTH6004SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6004SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6004SK3Q-13?

For technical support, including DMTH6004SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6004SK3Q-13 requirements.

6.How does Aetrix verify that DMTH6004SK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6004SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6004SK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMTH6004SK3Q-13?

All DMTH6004SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6004SK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6004SK3Q-13 part is unused and in its original packaging.

Return procedure for DMTH6004SK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6004SK3Q-13 Tags

  • DMTH6004SK3Q-13
  • DMTH6004SK3Q-13 PDF
  • DMTH6004SK3Q-13 Datasheet
  • DMTH6004SK3Q-13 Specifications
  • DMTH6004SK3Q-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH6004SK3Q-13
  • Buy DMTH6004SK3Q-13
  • DMTH6004SK3Q-13 Price
  • DMTH6004SK3Q-13 Distributor
  • DMTH6004SK3Q-13 Supplier
  • DMTH6004SK3Q-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER