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Diodes Incorporated DMTH6004SPSQ-13

Part No.:
DMTH6004SPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH6004SPSQ-13.pdf
Description:
MOSFET N-CH 60V 100A PWRDI5060
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,500

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Product details

Overview

DMTH6004SPSQ-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, qualified to AEC-Q101 and rated for continuous operation at +175°C. It delivers 3.1 mΩ RDS(ON) @ VGS = 10V, supports 400A pulsed drain current, and is engineered for high-reliability automotive power stages including DC motor control and synchronous rectification.

For engineers reviewing the DMTH6004SPSQ-13 datasheet, DMTH6004SPSQ-13 pinout, DMTH6004SPSQ-13 application, or DMTH6004SPSQ-13 equivalent, key selection criteria include its 0.9°C/W RθJC, 95.4 nC total gate charge, 100% production-tested UIS robustness, and IATF 16949-manufactured traceability for safety-critical automotive designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current, high-temperature automotive environments. Its 175°C maximum junction temperature and ±20V gate-source rating support stable operation under transient overvoltage and thermal stress conditions common in 12V/24V vehicle systems.

The device integrates a robust body diode with 50.5 ns reverse recovery time and 80.8 nC QRR, enabling efficient synchronous rectification in DC-DC converters. Its PowerDI5060-8 package features an exposed drain pad for direct thermal coupling to PCB copper, delivering 167W power dissipation at TC = +25°C.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands up to 60V drain-source blocking voltage without breakdown, suitable for 48V automotive subsystems and 24V battery-fed loads.
RDS(ON) 3.1 mΩ @ VGS = 10V - Enables <1.5W conduction loss at 60A, critical for minimizing thermal rise in compact motor drivers.
ID (TC = +25°C) 100 A - Sustains continuous 100A drain current when case temperature is maintained at 25°C, validated per package thermal limits.
Qg 95.4 nC - Determines gate drive energy requirement; enables fast turn-on with standard 1A peak gate drivers in high-frequency PWM applications.
RθJC 0.9 °C/W - Junction-to-case thermal resistance allows precise heatsink sizing; enables >150W power handling with ≤135°C case temperature rise.
EAS 200 mJ - Avalanche energy rating ensures survivability during inductive load switching transients without external snubbers.
TJ Range –55°C to +175°C - Full operational range certified for engine bay, transmission, and under-hood electronics per AEC-Q101 stress testing.

Pinout & Package

Package: PowerDI5060-8 - Surface-mount, thermally enhanced 8-pin molded plastic package with exposed drain pad (pins 2, 4, 6, 8) and matte tin annealed terminals. UL 94V-0 rated, MSL Level 1, 0.097 g weight.

Pin/Terminal Circuit Role Design Meaning
1 Source Primary current return path; electrically tied to internal source metallization and adjacent exposed drain pads via substrate isolation.
2 Drain Exposed drain pad - primary thermal path to PCB; must be soldered to ≥1 in² 2oz copper for rated 167W dissipation.
3 Gate Control input; requires ≤±20V drive; 0.66 Ω typical gate resistance minimizes ringing in high-dV/dt environments.
4 Drain Second exposed drain pad - parallel thermal and current path; shares same potential as Pin 2 and Pins 6–8.
5 Source Secondary source connection; reduces source inductance in high-frequency switching by shortening loop area.
6 Drain Third exposed drain pad - enhances thermal spreading and current sharing across package bottom surface.
7 Source Third source terminal - improves Kelvin sensing capability and reduces parasitic source inductance in precision current monitoring.
8 Drain Fourth exposed drain pad - completes symmetric drain layout for uniform thermal distribution and low-inductance high-current routing.

Key Features

Feature Design Value
AEC-Q101 qualification with PPAP support Validated for automotive production use with full change control, IATF 16949 manufacturing, and documented reliability test reports.
100% production UIS testing Every unit tested to 45A avalanche current and 200mJ energy, ensuring field robustness against inductive switching faults.
Low Qg / Qgd ratio (95.4 nC / 20.4 nC) Minimizes Miller-induced shoot-through risk and enables clean, controllable hard-switching up to 200 kHz in DC-DC topologies.
Green, halogen- and antimony-free construction Meets RoHS 3 (2015/863/EU) with <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - compliant for global automotive supply chains.
Optimized RDS(ON) vs. temperature stability RDS(ON) increases only 1.8× from 25°C to 175°C at VGS = 10V, enabling predictable thermal design in wide ambient ranges.

Applications

Electric Power Steering (EPS) Automotive DC-DC Converters

Use Scenario: High-current H-bridge driver for 12V/24V brushless EPS motors requiring bidirectional torque control and fault-tolerant operation.

IC Role / Device Role / Timing Role: Main power switch in dual-phase half-bridge configuration; handles 80A peak motor current with <100 ns dead-time control.

Use Value: 3.1 mΩ RDS(ON) reduces conduction loss by 35% versus legacy 4.5 mΩ MOSFETs, lowering heatsink mass by 40% in space-constrained steering columns.

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V bidirectional DC-DC converter for 48V mild hybrid architectures.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200 kHz with zero-voltage switching (ZVS) assist.

Use Value: 50.5 ns tRR and 80.8 nC QRR minimize reverse recovery loss, improving converter efficiency by 1.2% at 5 kW output.

Engine Start-Stop Systems Onboard Charger (OBC) Auxiliary Supplies

Use Scenario: Load switch controlling 12V auxiliary power rail during engine cranking, where voltage dips to 6V and ambient exceeds 125°C.

IC Role / Device Role / Timing Role: High-side power switch with integrated charge pump gate driver interface; operates down to 5V VGS.

Use Value: 2.5 mΩ typical RDS(ON) at VGS = 8V ensures <0.5V drop at 60A, maintaining regulated 12V output despite battery sag.

Use Scenario: Isolated auxiliary supply switch in OBC systems powering control logic, CAN transceivers, and gate drivers from main DC bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or forward converter delivering 15W at 12V/1.25A.

Use Value: 175°C rating allows placement near main power stage without derating; 0.9°C/W RθJC enables direct mounting on shared thermal plane.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7AG 60V, 220A, 1.8 mΩ @ 10V, PowerFLAT 5x6 package, RθJC = 0.7°C/W, Qg = 132 nC Higher current rating but larger footprint and higher gate charge; requires stronger gate driver. Select when >150A peak current is needed and board space permits larger package; not drop-in due to different pinout and thermal pad geometry.
IXTP110N065X4 65V, 110A, 3.2 mΩ @ 10V, TO-220 package, RθJC = 0.5°C/W, Qg = 72 nC Through-hole package with lower RθJC but no AEC-Q101 qualification; lacks PPAP documentation. Choose for industrial non-automotive DC-DC or motor drives where qualification is not required and through-hole assembly is preferred.

Compared with STL220N6F7AG and IXTP110N065X4, DMTH6004SPSQ-13 offers optimal balance of AEC-Q101 compliance, 3.1 mΩ RDS(ON), and PowerDI5060-8's compact thermal performance-making it the preferred choice for space-constrained, high-volume automotive modules requiring full PPAP traceability.

Availability

DMTH6004SPSQ-13 is available at Aetrix Electronics and suitable for electric power steering, 48V DC-DC conversion, and engine start-stop systems requiring stable component supply, full automotive qualification, and long-term lifecycle assurance.

Supply support for DMTH6004SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, designed specifically for high-temperature, high-current automotive power management applications including motor control, battery protection, and DC-DC conversion.

FAQ

What is the maximum allowable gate-source voltage for DMTH6004SPSQ-13?

The absolute maximum gate-source voltage is ±20V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10V–15V for optimal RDS(ON) and safe margin against transients.

Does DMTH6004SPSQ-13 require a gate resistor for automotive EMI compliance?

Yes - a 3.5Ω gate resistor is used in the datasheet's dynamic characterization (e.g., tD(ON), tR). This value balances switching speed and EMI; reducing it below 2Ω increases dV/dt and radiated emissions, while exceeding 10Ω degrades efficiency in high-frequency applications.

How is thermal performance affected if only two of the four drain pads are soldered?

Soldering fewer than all four drain pads (Pins 2, 4, 6, 8) increases effective RθJC proportionally - partial attachment can raise thermal resistance by 30–50%, limiting safe continuous current to ~70A and requiring derating of power dissipation to ≤100W to avoid exceeding 175°C junction temperature.

Can DMTH6004SPSQ-13 replace older DMP6004SK3-13 in existing designs?

No - DMP6004SK3-13 uses PowerDI3333 package (3.3mm × 3.3mm), while DMTH6004SPSQ-13 uses PowerDI5060-8 (5.15mm × 6.15mm). Footprint, pinout, and thermal pad layout are incompatible; redesign of PCB land pattern and gate drive layout is required for migration.

DMTH6004SPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4556 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta), 167W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH6004SPSQ-13 FAQ

1.How can I place an order for DMTH6004SPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6004SPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6004SPSQ-13 reliable?

The price and inventory of DMTH6004SPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6004SPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH6004SPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6004SPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6004SPSQ-13?

DMTH6004SPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6004SPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6004SPSQ-13?

For technical support, including DMTH6004SPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6004SPSQ-13 requirements.

6.How does Aetrix verify that DMTH6004SPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6004SPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6004SPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH6004SPSQ-13?

All DMTH6004SPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6004SPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6004SPSQ-13 part is unused and in its original packaging.

Return procedure for DMTH6004SPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH6004SPSQ-13 Tags

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