Diodes Incorporated DMTH6005LCT

Overview

DMTH6005LCT from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in TO220-3 package, rated for continuous operation up to +175°C. It delivers 6 mΩ R_DS(ON) at V_GS = 10 V and 10 mΩ at V_GS = 4.5 V, with 100% unclamped inductive switching (UIS) rating and AEC-Q101 qualification-designed for high-reliability automotive power stages including engine management and DC-DC converters.

For engineers reviewing the DMTH6005LCT datasheet, DMTH6005LCT pinout, DMTH6005LCT application, or DMTH6005LCT equivalent, key selection criteria include its 1.2 °C/W junction-to-case thermal resistance, low 59.8 pF Crss for fast switching, robust 14.8 A avalanche current capability, and RoHS-compliant green packaging suitable for high-ambient-temperature automotive environments.

Technical Context

This MOSFET employs planar silicon process technology optimized for low conduction loss and controlled gate charge (Q_g = 47.1 nC at V_GS = 10 V). Its threshold voltage range (1–3 V) ensures stable turn-on across temperature, while normalized R_DS(ON) variation remains ≤2.0× from −55°C to +175°C.

The device integrates an intrinsic body diode with 1.2 V forward voltage at 20 A and exhibits low input capacitance (C_iss = 2962 pF) and reverse transfer capacitance (Crss = 59.8 pF), enabling efficient hard-switching in synchronous buck and half-bridge topologies operating up to 30 V bus voltage.

Key Specifications

Pinout & Package

Package: TO220-3, molded plastic case with matte tin-plated copper leadframe, UL 94V-0 rated, 1.85 g weight. Terminal connections follow standard TO220-3 layout: Drain connected to tab, Source and Gate on leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6F7 and IXFH60N60X3, DMTH6005LCT offers optimal balance of low R_DS(ON), compact TO220-3 footprint, and AEC-Q101 compliance-making it the preferred choice for space- and thermal-constrained 48 V automotive power stages where 100 A continuous current and +175°C operation are mandatory.

Availability

DMTH6005LCT is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply in automotive production programs.

Supply support for DMTH6005LCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMTH6005LCT belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability automotive subsystems-including powertrain, chassis, and body electronics-where AEC-Q101 qualification and robust UIS performance are non-negotiable.

FAQ

Is DMTH6005LCT suitable for synchronous rectification in 48 V–12 V DC-DC converters?

Yes. With 6 mΩ R_DS(ON) at 10 V and low Crss (59.8 pF), DMTH6005LCT reduces conduction and switching losses in 300–500 kHz synchronous buck converters. Its 100 A rating supports peak currents up to 120 A, and the TO220-3 package allows direct heatsink attachment for thermal management at 50 A continuous output.

What is the maximum gate-source voltage that can be safely applied?

The absolute maximum V_GS is ±20 V per the datasheet. Operation above ±15 V risks gate oxide damage, while below ±3 V may cause incomplete turn-on. For reliable 4.5 V logic-level drive, use a gate driver with tight V_GS regulation and transient suppression to prevent overshoot beyond 18 V during switching.

Does DMTH6005LCT require a heatsink in automotive under-hood applications?

Yes. At 100 A continuous current, junction temperature exceeds 175°C without thermal management. With R_θJC = 1.2 °C/W, a heatsink with ≤1.0 °C/W total thermal resistance (including interface) is required to maintain T_J ≤ 175°C at 100 A and 25°C ambient-verified via transient thermal simulation using Figure 13 data.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 1.2 V at 20 A and t_RR = 40.4 ns, making it suitable for freewheeling in hard-switched topologies. While less efficient than 0.5 V Schottky diodes, its co-packaged integration eliminates layout parasitics and reduces component count-critical for AEC-Q101-compliant designs where reliability outweighs marginal efficiency gains.