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Diodes Incorporated DMTH6005LFG-13
- Part No.:
- DMTH6005LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH6005LFG-13.pdf
- Description:
- MOSFET N-CH 60V 19.7A/100A PWRDI
- Quantity:
- Payment:
- Shipping:
Inventory:2,122
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Product details
Overview
DMTH6005LFG-13 from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 4.1mΩ RDS(ON) @ VGS=10V, +175°C maximum junction temperature, and 100% production-tested UIS robustness. It serves as a high-current synchronous rectifier or main switch in high-efficiency DC-DC converters operating under thermally demanding conditions.
For engineers reviewing the DMTH6005LFG-13 datasheet, DMTH6005LFG-13 pinout, DMTH6005LFG-13 application, or DMTH6005LFG-13 equivalent, key selection criteria include RDS(ON) at 4.5V/6V/10V, thermal resistance (RθJC = 2.0°C/W), UIS energy rating (EAS = 171 mJ), and PowerDI3333-8 board-area footprint reduction versus SO-8.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low on-resistance while maintaining fast switching performance via optimized gate charge (Qg = 48.7 nC @ 10V, Qgd = 11.2 nC). Its body diode exhibits tRR = 40.8 ns and QRR = 51.5 nC under 30A/100A/μs conditions, supporting efficient hard-switched and synchronous rectification topologies.
The device is rated for continuous operation up to +175°C junction temperature and features a thermally enhanced exposed-drain PowerDI3333-8 package with RθJC = 2.0°C/W, enabling high-power density designs without external heatsinking in constrained thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V nominal bus systems with 20% transient margin. |
| RDS(ON) max | 4.1mΩ @ VGS=10V - Enables <1W conduction loss at 50A, critical for high-current power stages. |
| ID cont @ TC=25°C | 100A - Rated for high-current switching in motor drives and server VRMs when mounted on copper thermal pad. |
| EAS | 171mJ - Confirmed unclamped inductive switching capability ensures reliability in flyback and buck-boost converters. |
| RθJC | 2.0°C/W - Allows direct thermal coupling to PCB copper pour or heatsink, reducing system-level thermal resistance. |
| tRR | 40.8ns - Minimizes reverse recovery losses in synchronous rectification, improving efficiency above 300kHz. |
| Qgd/Qg | 11.2nC / 48.7nC - Low gate-drain charge ratio supports stable high-speed switching with reduced Miller-induced shoot-through risk. |
Pinout & Package
Package: PowerDI3333-8 - thermally optimized 8-pin surface-mount package with exposed drain paddle; occupies only 33% board area of SO-8; UL 94V-0 molded compound; matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 8 | Drain (D) | Internally connected to exposed metal paddle - primary thermal and current path; must be soldered to large copper pour for RθJC performance. |
| 5 | Source (S) | Low-side reference node; connects to power ground plane; carries full load current in low-side switch configuration. |
| 6, 7 | Gate (G) | Dual gate pins reduce gate loop inductance; require parallel routing and local gate resistor placement to suppress oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C rated junction temperature | Enables operation in engine bay, industrial motor drives, and sealed power supplies without derating at ambient >125°C. |
| 100% production UIS testing | Guarantees avalanche ruggedness across all units - eliminates field failure risk in inductive load switching. |
| PowerDI3333-8 thermal efficiency | RθJC = 2.0°C/W enables 75W dissipation at TC = 25°C - replaces TO-252/TO-263 in space-constrained 50–100A applications. |
| Low Qgd/Qg ratio (0.23) | Improves gate drive stability during Miller plateau transition, reducing need for negative gate turn-off voltage. |
| Halogen- and antimony-free "Green" construction | Meets IEC 61249-2-21 and JEDEC JS709C standards - supports automotive PPAP and RoHS 3 compliance without material waivers. |
Applications
| Synchronous Rectification | Motor Control |
|---|---|
|
Use Scenario: Secondary-side switch in isolated 48V-to-12V LLC resonant converter for telecom rectifiers. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary half-bridge timing. Use Value: Reduces conduction loss by 65% vs. 40V Schottky, enabling >96% full-load efficiency at 2kW output with 4.5V gate drive compatibility. |
Use Scenario: High-current phase-leg switch in 3-phase BLDC inverter for HVAC compressors. IC Role / Device Role / Timing Role: Low-side power switch in 60V motor drive stage; commutated at 15–25kHz with PWM dead-time control. Use Value: Sustains 89A continuous current at 100°C case temperature while limiting RDS(ON) drift to <15% over full -55°C to +175°C range. |
| DC-DC Converters | Power Management |
|
Use Scenario: Main switch in 60V input, 12V/80A non-isolated buck converter for server VRM. IC Role / Device Role / Timing Role: High-side switching FET controlled by multiphase controller; operated at 300–500kHz with 10V gate drive. Use Value: Delivers 4.1mΩ on-resistance at 10V drive, achieving <2.5W total loss (conduction + switching) at full load with minimal heatsink requirement. |
Use Scenario: Hot-swap OR-ing FET in redundant 48V telecom power distribution unit. IC Role / Device Role / Timing Role: Load-switching MOSFET placed between input bus and downstream DC-DC; controlled by dedicated hot-swap controller. Use Value: Withstands 400A pulsed drain current and 18.5A avalanche current, ensuring fault tolerance during input bus transients and cable hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB057N06N3 G | RDS(ON) = 5.7mΩ @ 10V; TO-263 package; RθJC = 1.4°C/W; no production UIS test specified. | Larger footprint (10.0×14.9mm vs. 3.3×3.3mm); requires external heatsink for >60A operation. | Select when higher avalanche margin is not required and board space permits larger package with lower RθJC. |
| SIHL600N06LS | RDS(ON) = 5.2mΩ @ 10V; PowerFLAT 5×6 package; RθJC = 2.5°C/W; AEC-Q101 qualified. | Automotive-qualified but higher RDS(ON); lacks +175°C rating (max TJ = 150°C). | Select for automotive-grade production where AEC-Q101 compliance is mandatory and 150°C junction limit suffices. |
Compared with IPB057N06N3 G and SIHL600N06LS, DMTH6005LFG-13 delivers lowest RDS(ON) in smallest footprint with verified +175°C operation and production UIS testing - optimal for space- and thermal-constrained industrial power stages where reliability under repetitive inductive stress is critical.
Availability
DMTH6005LFG-13 is available at Aetrix Electronics and suitable for high-current DC-DC converters, motor control inverters, and hot-swap power management systems requiring stable component supply across extended temperature and high-reliability operational profiles.
Supply support for DMTH6005LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' PowerTrench®-based high-current logic-level portfolio, engineered specifically for high-efficiency, high-density power conversion in industrial, computing, and telecom infrastructure where thermal resilience and avalanche robustness are non-negotiable.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH6005LFG-13 supports 78A continuous drain current at TC = +100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This rating assumes proper thermal mounting to a copper thermal pad per the recommended PCB layout in the datasheet.
Does this MOSFET require gate resistors for stable switching?
Yes - dual gate pins (pins 6 and 7) must be driven in parallel with a single series gate resistor (typically 2.2–4.7Ω) placed close to the device. This minimizes gate loop inductance and prevents oscillation during fast dV/dt transitions, especially in hard-switched topologies.
Is the PowerDI3333-8 package lead-free and RoHS compliant?
Yes - the DMTH6005LFG-13 uses matte tin annealed terminals over copper leadframe and conforms to EU RoHS Directive 2015/863/EU (RoHS 3), with bromine and chlorine content below 900ppm each and antimony below 1000ppm, certified as "Green" per Diodes Incorporated's definition.
Can this MOSFET replace a TO-252 DPAK in existing layouts?
No - the PowerDI3333-8 has different mechanical dimensions (3.3×3.3mm vs. TO-252's 6.5×6.1mm), pin assignment, and thermal interface (exposed drain vs. tab-down). Direct replacement requires PCB redesign, including new pad layout, thermal copper pour, and gate routing - but delivers 67% board area reduction and superior thermal performance.
DMTH6005LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 19.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3150 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.38W (Ta), 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMTH6005LFG-13 FAQ
1.How can I place an order for DMTH6005LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6005LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6005LFG-13 reliable?
The price and inventory of DMTH6005LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6005LFG-13 is usually 5 days.
3.What payment methods are accepted for DMTH6005LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6005LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6005LFG-13?
DMTH6005LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6005LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6005LFG-13?
For technical support, including DMTH6005LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6005LFG-13 requirements.
6.How does Aetrix verify that DMTH6005LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6005LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6005LFG-13 meets industry standards.
7.What is the process for return or replacement of DMTH6005LFG-13?
All DMTH6005LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6005LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6005LFG-13 part is unused and in its original packaging.
Return procedure for DMTH6005LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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