Diodes Incorporated DMTH6005LFG-7

Overview

DMTH6005LFG from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 4.1mΩ R_DS(ON) @ V_GS = 10V, +175°C maximum junction temperature, and 100% production-tested UIS robustness. It serves as a high-current power switch in synchronous rectification stages of DC-DC converters for server VRMs and telecom power supplies.

For engineers reviewing the DMTH6005LFG datasheet, DMTH6005LFG pinout, DMTH6005LFG application, or DMTH6005LFG equivalent, key selection criteria include its low R_DS(ON) at 4.5V gate drive, thermally efficient exposed-drain package, 175°C operation capability, and validated avalanche energy (171 mJ) for inductive switching reliability.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for conduction loss minimization while retaining fast switching performance. Its R_DS(ON) remains stable across -55°C to +175°C, with gate threshold voltage (1–2.5V) tightly distributed to ensure predictable turn-on behavior under wide thermal and supply-voltage conditions.

The device integrates a low-Q_gd/Q_g ratio (11.2nC/48.7nC) and low Crss (69pF), enabling high-efficiency hard-switching operation at frequencies up to 1MHz. Its PowerDI3333-8 package provides 2.0°C/W R_θJC, directly coupling heat from the die to PCB copper via an exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–4 and 5–8 are source and gate terminals respectively; drain connected to underside metal pad). Dimensions: 3.30 × 3.30 × 0.80 mm, footprint occupies 33% board area vs SO-8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP100N065T and STL220N6F7, DMTH6005LFG uniquely combines SMT manufacturability, +175°C rating, and 100% UIS screening-making it optimal for high-reliability industrial and telecom power where thermal density and inductive stress coexist.

Availability

DMTH6005LFG is available at Aetrix Electronics and suitable for server VRM designs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned quality assurance.

Supply support for DMTH6005LFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-temperature power conversion in infrastructure and industrial systems where thermal resilience and switching reliability are non-negotiable.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH6005LFG supports 78A continuous drain current at case temperature +100°C per datasheet Section "Maximum Ratings" (Note 6). This value reflects thermal derating due to reduced channel mobility and increased R_DS(ON) at elevated temperatures, verified under controlled TC measurement conditions with the exposed drain pad soldered to a thermal test board.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent parasitic oscillation during switching. The datasheet specifies R_g = 0.7Ω intrinsic gate resistance; typical external values range from 2.2Ω to 10Ω depending on driver strength and layout inductance. No gate resistor is strictly mandatory for static operation, but omission risks ringing and EMI in hard-switched topologies.

Is the PowerDI3333-8 package lead-free and RoHS compliant?

Yes. The DMTH6005LFG uses matte tin annealed over copper leadframe, fully compliant with EU RoHS directives 2011/65/EU and 2015/863/EU. It is also halogen- and antimony-free ("Green" per Diodes' definition), with bromine and chlorine content below 900ppm each and antimony below 1000ppm.

Can DMTH6005LFG be used in automotive applications?

While DMTH6005LFG meets +175°C operation and robust UIS performance, it is not AEC-Q101 qualified out-of-box. Diodes Incorporated offers automotive-grade variants (e.g., DMTH6005LFG-Q) with PPAP documentation, IATF 16949 manufacturing, and extended reliability testing-contact Diodes or Aetrix for qualified part numbers and change control support.