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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH6005LFGQ-13

Name: DMTH6005LFGQ-13
Brand: Diodes Incorporated
SKU: DMTH6005LFGQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH6005LFGQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMTH6005LFGQ-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI333

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Product details

Overview

DMTH6005LFGQ-13 from Diodes Incorporated is a 60V, 98A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 4.1mΩ R_DS(ON) at V_GS = 10V and supports synchronous rectification, motor control, and DC-DC converters in automotive power systems.

For engineers reviewing the DMTH6005LFGQ-13 datasheet, DMTH6005LFGQ-13 pinout, DMTH6005LFGQ-13 application, or DMTH6005LFGQ-13 equivalent, key selection criteria include its 2°C/W R_θJC, 100% production-tested UIS robustness, low gate charge (47.5nC @ 10V), and thermally optimized 3333 footprint enabling high-density automotive PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its 60V BVDSS rating and 18.5A I_AS avalanche current support reliable operation under transient overvoltage conditions in 12V/48V vehicle subsystems.

The device integrates an intrinsic body diode with 43.2ns t_RR and 50.1nC Q_RR, enabling efficient freewheeling in hard-switched topologies. Its gate threshold voltage (1–2.5V) ensures stable turn-on across -55°C to +175°C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60V - Withstands up to 60V drain-source blocking voltage before breakdown, suitable for 48V automotive bus applications.
RDS(ON) Max	4.1mΩ @ VGS = 10V - Minimizes conduction loss in high-current paths (e.g., 98A continuous at TC = 25°C).
ID Max	98A @ TC = +25°C - Supports high-power motor drive and DC-DC output stages without external heatsinking.
RθJC	2°C/W - Enables direct thermal coupling to PCB copper pads, delivering 75W power dissipation capability at case temperature.
Qg	47.5nC @ VGS = 10V - Determines gate driver strength requirement; enables efficient 100kHz+ switching in buck converters.
tRR	43.2ns - Reduces body diode recovery loss and EMI in synchronous rectifier configurations.
TJ Range	-55°C to +175°C - Certified for under-hood automotive use where ambient temperatures exceed 125°C.

Pinout & Package

Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad for low R_θJC; occupies only 33% board area of SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; pins 1–4 are internally tied to minimize source inductance in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Exposed drain pad (pins 5–8) forms primary thermal path to PCB; electrically connected to all drain terminals.
Pin 4 (top view)	Gate (G)	Single gate input; located adjacent to source for minimized gate loop inlay; requires <3.3Ω series resistance for optimal EMI control.

Key Features

Feature	Design Value
AEC-Q101 qualification & PPAP support	Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
100% UIS tested in production	Every unit undergoes unclamped inductive switching stress test, ensuring robustness against load dump and inductive kickback events.
Thermally optimized PowerDI3333-8	2°C/W R_θJC enables 75W power handling at TC = 25°C - outperforms SO-8 by >3× thermal efficiency in same board area.
Low RDS(ON) vs. temperature stability	R_DS(ON) increases only 1.8× from 25°C to 175°C at V_GS = 10V, maintaining predictable conduction loss across full operating range.
Green, halogen-free construction	Meets RoHS 3 (2015/863/EU) and Diodes' "Green" standard (<900ppm Br, <900ppm Cl, <1000ppm Sb), supporting automotive environmental compliance.

Applications

Automotive Body Control Module

48V Mild Hybrid DC-DC Converter

Use Scenario: High-side load switching for HVAC actuators, lighting, and window lift motors in BCMs.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; operates in on/off mode with <100ns transition times.

Use Value: 98A ID rating and +175°C TJ rating allow direct replacement of dual-MOSFET solutions while reducing board space by 67% versus SO-8.

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V bi-directional buck-boost converter for mild hybrid energy recovery.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET driven by dedicated gate controller; switches at 200kHz with 47.5nC Qg.

Use Value: 4.1mΩ R_DS(ON) and 43.2ns t_RR reduce conduction and recovery losses by 22% versus comparable 60V TrenchFETs in same package.

Electric Power Steering Motor Driver

Onboard Charger (OBC) Auxiliary Power Supply

Use Scenario: Half-bridge leg in 3-phase inverter driving 12V EPS motor with peak currents up to 85A.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge topology; subjected to repetitive UIS stress during regenerative braking.

Use Value: 100% production UIS testing ensures >100k-cycle reliability under 18.5A/171mJ avalanche conditions typical in EPS fault transients.

Use Scenario: Primary-side switch in auxiliary flyback converter supplying 12V bias rails for OBC gate drivers and MCU.

IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 65kHz with 10V gate drive; handles 17A continuous current at TA = 100°C.

Use Value: 6.3mΩ R_DS(ON) @ V_GS = 6V enables direct logic-level drive from automotive microcontrollers, eliminating level-shifter components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	60V, 220A, 2.2mΩ @ 10V, PowerFLAT 5x6 package, R_θJC = 1.2°C/W	Higher current rating but larger footprint; requires more PCB copper area for thermal management	Select when >150A peak current or sub-2°C/W thermal resistance is required; not drop-in due to different pinout and layout.
IXTP50N10T	100V, 50A, 12mΩ @ 10V, TO-220 package, R_θJC = 1.5°C/W	Higher voltage rating but lower current and much larger through-hole package; no AEC-Q101 qualification	Use only in non-automotive industrial designs requiring >60V margin; incompatible with automated SMT assembly and automotive qualification requirements.

Compared with STL220N6F7AG and IXTP50N10T, DMTH6005LFGQ-13 offers optimal balance of 98A current, 4.1mΩ on-resistance, AEC-Q101 compliance, and compact PowerDI3333-8 footprint - making it uniquely suited for space-constrained, thermally demanding automotive modules where qualification and SMT scalability are mandatory.

Availability

DMTH6005LFGQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, 48V mild hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply and full AEC-Q101 traceability.

Supply support for DMTH6005LFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power conversion and motor control applications demanding extended temperature operation and production-grade robustness.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH6005LFGQ-13 supports 69A continuous drain current at TC = +100°C per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package and must be validated with actual PCB copper area and airflow conditions in the target application.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes - the intrinsic body diode has 43.2ns reverse recovery time and 50.1nC Q_RR, enabling efficient synchronous rectification in buck and flyback topologies up to 200kHz. However, for ultra-low-loss designs above 300kHz, an external Schottky may still be preferred to eliminate Q_RR-related losses.

Does this part require a gate resistor for EMI control in automotive applications?

Yes - a 2.2Ω to 3.3Ω gate resistor is recommended to limit dV/dt and suppress ringing caused by parasitic inductance in high-di/dt automotive power circuits. The gate resistance value must be co-optimized with driver output impedance and layout to meet CISPR 25 Class 5 emission limits.

How does the RDS(ON) change with gate voltage below 4.5V?

At V_GS = 3.0V, R_DS(ON) rises to approximately 12mΩ (extrapolated from Figure 4), and at V_GS = 2.5V, it exceeds 18mΩ. Operation below 4.5V is not recommended for high-efficiency applications due to rapid on-resistance increase and elevated conduction loss.

DMTH6005LFGQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3223 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.38W (Ta), 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMTH6005LFGQ-13 FAQ

1.How can I place an order for DMTH6005LFGQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH6005LFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH6005LFGQ-13 reliable?

The price and inventory of DMTH6005LFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6005LFGQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH6005LFGQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6005LFGQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH6005LFGQ-13?

DMTH6005LFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH6005LFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH6005LFGQ-13?

For technical support, including DMTH6005LFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6005LFGQ-13 requirements.

6.How does Aetrix verify that DMTH6005LFGQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH6005LFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6005LFGQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH6005LFGQ-13?

All DMTH6005LFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6005LFGQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH6005LFGQ-13 part is unused and in its original packaging.

Return procedure for DMTH6005LFGQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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