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Diodes Incorporated DMTH6005LPS-13
- Part No.:
- DMTH6005LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH6005LPS-13.pdf
- Description:
- MOSFET N-CH 60V PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:2,396
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Product details
Overview
DMTH6005LPS from Diodes Incorporated is a 60V, 100A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 4.4 mΩ (typ) at VGS = 10 V and Qg = 47.1 nC - optimized for high-frequency synchronous rectification and DC-DC converter primary/secondary-side switching in automotive and industrial power supplies.
For engineers reviewing the DMTH6005LPS datasheet, DMTH6005LPS pinout, DMTH6005LPS application, or DMTH6005LPS equivalent, key selection criteria include its 100% unclamped inductive switching (UIS) rating (EAS = 98 mJ), low thermal resistance (RθJC = 1 °C/W), and robust +175°C operation - critical for under-hood automotive modules, server VRMs, and high-density industrial SMPS designs requiring high reliability and minimal conduction loss.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve ultra-low RDS(ON) while maintaining fast switching performance: Ciss = 2962 pF, Coss = 965 pF, and Crss = 59.8 pF at VDS = 30 V, enabling efficient operation in hard-switched and resonant topologies up to several hundred kHz.
Its gate threshold voltage (VGS(TH) = 1–3 V) ensures compatibility with standard 4.5 V and 10 V gate drivers, and its body diode exhibits tRR = 40.4 ns and QRR = 49.7 nC at dI/dt = 100 A/μs - supporting high-efficiency synchronous rectification without external Schottky assist.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 48 V nominal bus systems with 20 % transient margin; suitable for 12 V/24 V/48 V automotive and telecom power rails. |
| RDS(ON) | 4.4 mΩ (typ) @ VGS = 10 V - Delivers ≤2.2 W conduction loss at 100 A, enabling high-current output stages without forced air cooling. |
| Qg | 47.1 nC @ VGS = 10 V - Enables <50 ns turn-on delay (tD(ON) = 8.3 ns) with 3.3 Ω gate resistor, reducing switching loss in high-frequency converters. |
| TJ(max) | +175 °C - Qualified per AEC-Q standards for under-hood automotive use; allows operation in sealed enclosures or high-ambient industrial environments. |
| EAS | 98 mJ - Confirmed 100 % UIS rating ensures robustness against inductive load transients in motor drives and solenoid controls. |
| RθJC | 1 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad; supports >100 W continuous dissipation with proper PCB copper area. |
Pinout & Package
Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2, 4, 6, 7, 8 connected to drain), molded green compound (UL 94V-0), and matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary current return path; electrically isolated from drain; connects to low-side switch node or ground reference. |
| 2 | Drain | High-current power input/output node; tied internally to exposed metal pad for thermal and electrical conduction. |
| 3 | Gate | Control terminal; requires ≤±20 V drive; low input capacitance (Ciss = 2962 pF) enables fast edge rates with moderate driver strength. |
| 4, 6, 7, 8 | Drain | Parallel drain connections - reduce current density and parasitic inductance; must be soldered to large copper pour for thermal management. |
| 5 | Source | Secondary source connection; improves current sharing and reduces source inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| 100 % Unclamped Inductive Switching (UIS) | Validated EAS = 98 mJ - eliminates need for external snubbers in flyback or buck-boost converters driving inductive loads. |
| +175 °C Junction Rating | Enables operation in engine control units, battery management systems, and industrial inverters without derating at elevated ambient temperatures. |
| Low Qg/Qgd Ratio | Qgd/Qg = 26.5 % - minimizes Miller plateau duration, improving controllability during hard switching and reducing shoot-through risk. |
| Optimized Body Diode | tRR = 40.4 ns, QRR = 49.7 nC - enables zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge topologies without external diode replacement. |
| RoHS & Halogen-Free Compliance | Meets EU RoHS 3 (2015/863/EU); Br+Cl <1500 ppm, Sb <1000 ppm - satisfies automotive OEM environmental requirements and end-of-life recycling mandates. |
Applications
| Automotive Engine Control Unit (ECU) | Server Voltage Regulator Module (VRM) |
|---|---|
|
Use Scenario: High-current 12 V load switching for fuel injectors, ignition coils, and solenoid valves in under-hood ECU modules. IC Role / Device Role / Timing Role: Low-side N-channel switch driven by microcontroller GPIO or dedicated gate driver; operates in PWM or on/off mode with <100 ns switching transitions. Use Value: RDS(ON) ≤5.5 mΩ ensures <0.5 W loss at 10 A continuous, while +175°C rating avoids thermal shutdown during sustained high-load conditions. |
Use Scenario: Secondary-side synchronous rectifier in 48 V-to-12 V intermediate bus converter powering CPU/GPU VRMs in data center servers. IC Role / Device Role / Timing Role: Fast-turning N-channel MOSFET replacing Schottky diode; driven by transformer-coupled or active gate control synchronized to primary-side switching. Use Value: QRR = 49.7 nC and tRR = 40.4 ns minimize reverse recovery loss and EMI, improving efficiency by ≥1.2 % over discrete diode solutions at 300 kHz. |
| Industrial Motor Drive Inverter | Telecom DC-DC Brick Converter |
|
Use Scenario: Half-bridge high-side or low-side switch in 24–48 V BLDC motor inverters for HVAC blowers and factory automation actuators. IC Role / Device Role / Timing Role: Power switch in three-phase inverter leg; subjected to repetitive UIS events during motor stall or short-circuit fault conditions. Use Value: 100 % UIS qualification (IAS = 14.8 A, EAS = 98 mJ) provides inherent fault tolerance without additional protection circuitry, reducing BOM count and board space. |
Use Scenario: Primary-side switch in isolated 48 V input, 12 V/50 A output telecom brick converter used in base station power systems. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET operating at 200–300 kHz in forward or active-clamp forward topology. Use Value: RθJC = 1 °C/W and exposed drain pad allow direct mounting to heatsink, sustaining 100 A peak current with <65 °C junction rise above case - meeting NEBS GR-63-CORE thermal compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP110N065T | RDS(ON) = 5.2 mΩ @ 10 V; Qg = 62 nC; TO-220 package; RθJC = 1.2 °C/W | Higher gate charge increases switching loss; through-hole mounting limits board density and thermal interface flexibility. | Select when legacy TO-220 footprint is required and lower switching frequency (<100 kHz) permits higher Qg penalty. |
| STL220N6F7 | RDS(ON) = 3.8 mΩ @ 10 V; Qg = 58 nC; PowerFLAT 8x8 HV package; RθJC = 0.9 °C/W | Slightly lower RDS(ON) but higher Qg; same thermal performance but different pad layout and gate drive timing behavior. | Prefer for new designs targeting <3.5 mΩ RDS(ON), provided layout revision accommodates ST's 8x8 mm footprint and revised gate loop inductance. |
Compared with IXTP110N065T and STL220N6F7, DMTH6005LPS delivers optimal balance of ultra-low conduction loss (4.4 mΩ), moderate gate charge (47.1 nC), and industry-leading thermal resistance (1 °C/W) in a compact 5.15 × 6.15 mm surface-mount package - making it especially suited for space-constrained, high-reliability automotive and telecom power stages where thermal headroom and UIS robustness are non-negotiable.
Availability
DMTH6005LPS is available at Aetrix Electronics and suitable for automotive engine control units, server VRMs, industrial motor drives, and telecom DC-DC bricks requiring stable component supply, long-term lifecycle support, and AEC-Q qualified assurance.
Supply support for DMTH6005LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and computing markets.
DMTH6005LPS belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, high-temperature power conversion applications demanding low RDS(ON), rugged UIS capability, and automotive-grade reliability.
FAQ
What is the maximum continuous drain current (ID) at TC = +100°C?
The DMTH6005LPS supports 90 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating from 100 A at +25°C reflects thermal limitations of the PowerDI5060-8 package and must be validated using actual PCB copper area, heatsinking, and airflow conditions in the target application.
Is DMTH6005LPS qualified for automotive applications?
Yes - DMTH6005LPS is qualified to JEDEC standards referenced in AEC-Q200 for high-reliability applications. Its +175°C rating, 100 % UIS testing, and halogen-free "Green" construction meet Tier-1 automotive supplier requirements. For production automotive use, the automotive-compliant variant DMTH6005LPSQ (with full AEC-Q101 qualification) is recommended.
Can DMTH6005LPS be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(ON) (shown in Figure 6) ensures inherent current sharing stability. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and identical thermal mounting to avoid current imbalance; typical design practice uses <1 Ω gate resistors per device and shared source Kelvin sensing.
What is the recommended gate resistor value for 300 kHz switching?
A 2.2 Ω to 3.3 Ω non-inductive gate resistor is recommended for 300 kHz operation, balancing switching speed (tD(ON) = 8.3 ns, tF = 8.9 ns) against ringing and EMI. Lower values increase dV/dt stress and require careful PCB layout to minimize gate loop inductance; higher values reduce EMI but raise switching losses proportionally to Qg × fSW.
DMTH6005LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.6A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2962 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH6005LPS-13 FAQ
1.How can I place an order for DMTH6005LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH6005LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH6005LPS-13 reliable?
The price and inventory of DMTH6005LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH6005LPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH6005LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH6005LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH6005LPS-13?
DMTH6005LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH6005LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH6005LPS-13?
For technical support, including DMTH6005LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH6005LPS-13 requirements.
6.How does Aetrix verify that DMTH6005LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH6005LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH6005LPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH6005LPS-13?
All DMTH6005LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH6005LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH6005LPS-13 part is unused and in its original packaging.
Return procedure for DMTH6005LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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